FGA15N120FTD

FGA15N20FTD 1200V, 15A Trench IGBT January 2008 FGA15N120FTD 1200V, 15A Field Stop Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE(sat) =1.58V @ IC = 15A • High input impedance • RoHS complaint tm General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggeness. This device is designed for soft switching applications. Applications • Induction heating and Microwave oven • Soft switching applications C G TO-3PN GCE E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25 C @ TC = 100 C o o Ratings 1200 ± 25 @ TC = 25oC @ TC = 100 C o Units V V A A A A A W W o o o 30 15 45 @ TC = 100oC 15 90 220 88 -55 to +150 -55 to +150 300 C C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1 Typ. - Max. 0.57 2.1 62.5 Units o C /W o o C /W C /W ©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FGA15N120FTD Rev. A FGA15N120FTD 1200V, 15A Trench IGBT Package Marking and Ordering Information Device Marking FGA15N120FTD Device FGA15N120FTDTU Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 - - 1 ±250 V mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 15A, VGE = 15V, TC = 125oC 3.5 6 1.58 1.83 7.5 2 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2350 70 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 15A, VGE = 15V VCC = 600V, IC = 15A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 125oC VCC = 600V, IC = 15A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 25oC 33 80 160 255 0.3 0.58 0.88 30 115 170 390 0.38 0.89 1.27 100 19 45 330 0.74 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC FGA15N120FTD Rev. A 2 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Electrical Characteristics of the Diode Symbol VFM trr Irr Qrr TC = 25°C unless otherwise noted Parameter Diode Forward Voltage Test Conditions IF = 15A TC = 25oC TC = 125oC TC = 25oC IES =15A, dI/dt = 200A/µs TC = 125oC o Min. - Typ. 1.4 1.42 575 577 30 37 8.7 10.7 Max 1.8 - Units V Diode Reverse Recovery Time ns Diode Peak Reverse Recovery Cyrrent TC = 25oC TC = 125 C TC = 25oC TC = 125 C o A µC Diode Reverse Recovery Charge FGA15N120FTD Rev. A 3 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 120 TC = 25 C o Figure 2. Typical Output Characteristics 120 TC = 125 C o 20V 20V 17V Collector Current, IC [A] Collector Current, IC [A] 90 17V 15V 12V 90 15V 12V 60 60 10V 10V 30 VGE = 8V 30 VGE = 8V 0 0 2 4 6 8 10 Collector-Emitter Voltage, VCE [V] 12 0 0 2 4 6 8 10 Collector-Emitter Voltage, VCE [V] 12 Figure 3. Typical Saturation Voltage Characteristics 100 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 100 Common Emitter VCE = 20V Collector Current, IC [A] Collector Current, IC [A] 80 TC = 25 C TC = 125 C o o o 80 TC = 25 C TC = 125 C o 60 60 40 40 20 20 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 0 2 4 6 8 10 12 Gate-Emitter Voltage,VGE [V] 14 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.8 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 30A Figure 6. Saturation Voltage vs. VGE 20 Common Emitter Collector-Emitter Voltage, VCE [V] TC = 25 C o 16 2.4 12 2.0 15A 8 1.6 IC = 10A 4 15A IC = 10A 30A 1.2 25 0 50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C] 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGA15N120FTD Rev. A 4 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Figure 8. Capacitance Characteristics 4000 Common Emitter VGE = 0V, f = 1MHz Cies TC = 25 C o Collector-Emitter Voltage, VCE [V] 16 Capacitance [pF] 3000 12 2000 8 15A 30A IC = 10A Coes 1000 Cres 4 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate charge Characteristics 15 Common Emitter o Figure 10. SOA Characteristics 200 100 IC MAX (Pulse) Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] TC = 25 C VCC = 200V 400V 600V 10µs 10 10 100µs 1ms 10ms 1 IC MAX (Continuous) DC Operation *Notes: o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 5 0.1 0 0 30 60 90 Gate Charge, Qg [nC] 120 0.01 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 2000 Figure 11. Turn-on Characteristics vs. Gate Resistance 300 Figure 12. Turn-off Characteristics vs. Gate Resistance 2000 Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C o o 1000 Switching Time [ns] td(off) 100 tr Switching Time [ns] td(on) Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C o o tf 100 70 10 0 20 40 60 80 Gate Resistance, RG [Ω] 100 0 20 40 60 80 100 Gate Resistance, RG [Ω] FGA15N120FTD Rev. A 5 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 600 Common Emitter VGE = 15V, RG = 15Ω TC = 25 C o o Figure 14. Turn-off Characteristics vs. Collector Current 1000 tf Switching Time [ns] 100 Switching Time [ns] TC = 125 C tr 100 td(off) td(on) Common Emitter VGE = 15V, RG = 15Ω TC = 25 C TC = 125 C o o 10 10 15 20 25 30 10 10 15 20 25 30 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 10000 Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C o o Figure 16. Switching Loss vs. Collector Current 10000 Common Emitter VGE = 15V, RG = 15Ω TC = 25 C o o Switching Loss [µJ] Switching Loss [µJ] TC = 125 C Eoff 1000 Eoff Eon 1000 Eon 100 0 20 40 60 80 Gate Resistance, RG [Ω] 100 100 10 15 20 25 30 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 40 80 Collector Current, IC [A] Forward Current, IF [A] 10 o TJ = 125 C 10 TJ = 25 C o 1 TC = 25 C Safe Operating Area o VGE = 15V, TC = 125 C o TC = 125 C o 1 1 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] 0.1 0.0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 FGA15N120FTD Rev. A 6 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Current 40 Reverse Recovery Currnet, Irr [A] 200A/µs Figure 20. Stored Charge 14000 Stored Recovery Charge, Qrr [nC] 12000 10000 8000 6000 4000 2000 0 5 10 15 20 Forward Current, IF [A] 25 30 200A/µs 30 20 di/dt = 100A/µs di/dt = 100A/µs 10 0 5 10 15 20 Forward Current, IF [A] 25 30 Figure 21.Reverse Recovery Time 800 Reverse Recovery Time, trr [ns] di/dt = 100A/µs 600 200A/µs 400 200 5 10 15 20 25 30 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGA15N120FTD Rev. A 7 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Mechanical Dimensions TO-3PN Dimensions in Millimeters FGA15N120FTD Rev. A 8 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA15N120FTD Rev. A 9 www.fairchildsemi.com