FGA25N120AN

FGA25N120AN IGBT FGA25N120AN General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features • High speed switching • Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A • High input impedance Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G E TO-3P GCE Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ T C = 2 5° C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C FGA25N120AN 1200 ± 20 40 25 75 310 125 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 0.4 40 Units °C/W °C/W ©2004 Fairchild Semiconductor Corporation FGA25N120AN Rev. A FGA25N120AN Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----3 ± 100 V V/°C mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125°C IC = 40A, VGE = 15V 3.5 ---5.5 2.5 2.9 3.1 7.5 3.2 --V V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2100 180 90 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------60 60 170 45 4.8 1.0 5.7 60 60 180 70 5.5 1.4 6.9 200 15 105 14 ---90 7.2 1.5 8.7 -------300 23 160 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC nH VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 600 V, IC = 25A, VGE = 15V Measured 5mm from PKG ©2004 Fairchild Semiconductor Corporation FGA25N120AN Rev. A FGA25N120AN 180 160 140 T C = 25 ℃ 120 20V 17V 15V 12V 100 Common Emitter VGE = 15V T C = 25℃ TC = 125℃ Collector Current, IC [A] Collector Current, IC [A] 120 100 VGE = 10V 80 60 40 20 0 0 2 4 6 8 10 80 60 40 20 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4.0 Common Emitter VGE = 15V 50 Vcc = 600V load Current : peak of square wave 40 Collector-Emitter Voltage, VCE [V] 40A 3.5 Load Current [A] 30 3.0 IC = 25A 20 2.5 10 Duty cycle : 50% Tc = 100℃ Powe Dissipation = 60W 2.0 25 50 75 100 125 0 0.1 1 10 100 1000 Case Temperature, T C [℃] Frequency [kHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25℃ 20 Common Emitter TC = 125 ℃ Collector-Emitter Voltage, VCE [V] 16 Collector-Emitter Voltage, VCE [V] 16 12 12 8 8 40A 4 25A IC = 12.5A 0 0 4 8 12 16 20 4 IC = 12.5A 0 0 4 8 40A 25A 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2004 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FGA25N120AN Rev. A FGA25N120AN 4000 3500 3000 Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 100 Ciss Switching Time [ns] Capacitance [pF] 2500 2000 1500 tr td(on) Coss 1000 Crss 500 0 1 10 Common Emitter VCC = 6 00V, VGE = ± 15V IC = 2 5A T C = 2 5℃ TC = 1 25℃ 10 0 10 20 30 40 50 60 70 Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Loss [mJ] Switching Time [ns] Common Emitter VCC = 600V, VGE = ± 15V IC = 25A T C = 25℃ TC = 125℃ td(off) 10 Common Emitter V CC = 600V, VGE = ± 15V IC = 25A T C = 25 ℃ T C = 125℃ Eon 100 tf Eoff 1 10 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 Gate Resistance, RG [Ω] Gate Resistance, R G [Ω] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Common Emitter VGE = ± 15V, RG = 1 0Ω T C = 2 5℃ TC = 1 25℃ Common Emitter VGE = ± 15V, RG = 1 0Ω T C = 2 5℃ TC = 1 25℃ td(off) 100 Switching Time [ns] Switching Time [ns] tr 100 tf td(on) 10 20 30 40 50 10 20 30 40 50 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2004 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current FGA25N120AN Rev. A FGA25N120AN 16 Common Emitter VGE = ± 15V, RG = 10 Ω T C = 25 ℃ TC = 125℃ 14 Eon Common Emitter R L = 24Ω T C = 25℃ 600V 10 400V 8 6 4 2 0 10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 200 Vcc = 200V Gate-Emitter Voltage, VGE [V] 10 12 Switching Loss [mJ] Eoff 1 0.1 Collector Current, IC [A] Gate Charge, Q g [nC] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 100 Ic MAX (Pulsed) 50µs Ic MAX (Continuous) 100 µs 10 1ms DC Operation 1 Collector Current, Ic [A] Collector Current, IC [A] 10 0.1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 0.01 1 1 10 Safe Operating Area VGE = 15V, TC = 125℃ 100 1000 Collector - Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA 10 T hermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 single pulse 1E-3 1E-5 Pdm Pdm t1 t1 t2 t2 Duty factor D = t1 // t2 Duty factor D = t1 t2 Peak Tj = Pdm × Zthjc + TC Peak Tj = Pdm × Zthjc + TC 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2004 Fairchild Semiconductor Corporation FGA25N120AN Rev. A FGA25N120AN Package Dimension TO-3P (FS PKG CODE) 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation FGA25N120AN Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I6