FGA25N120AND
IGBT
FGA25N120AND
General Description
Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
Features
• • • • High speed switching Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A High input impedance CO-PAK, IGBT with FRD : trr = 235ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
G
TO-3P
GCE
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
TC = 25°C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
@ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C
FGA25N120AND 1200 ± 20 40 25 75 25 150 310 125 -55 to +150 -55 to +150 300
Units V V A A A A A W W °C °C °C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.4 2.0 40 Units °C/W °C/W °C/W
©2003 Fairchild Semiconductor Corporation
FGA25N120AND Rev. A
FGA25N120AND
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----3 ± 100 V V/°C mA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125°C IC = 40A, VGE = 15V 3.5 ---5.5 2.5 2.9 3.1 7.5 3.2 --V V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2100 180 90 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------60 60 170 45 4.8 1.0 5.7 60 60 180 70 5.5 1.4 6.9 200 15 105 14 ---90 7.2 1.5 8.7 -------300 23 160 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC nH
VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C
VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C
VCE = 600 V, IC = 25A, VGE = 15V Measured 5mm from PKG
= 25°C unless otherwise noted
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
Test Conditions T C = 2 5° C IF = 25A TC = 125°C T C = 2 5° C TC = 125°C IF = 25A dI/dt = 200 A/µs T C = 2 5° C TC = 125°C T C = 2 5° C TC = 125°C
Min. ---------
Typ. 2.0 2.1 235 300 27 31 3130 4650
Max. 3.0 -350 -40 -4700 --
Units V ns A nC
©2003 Fairchild Semiconductor Corporation
FGA25N120AND Rev. A
FGA25N120AND
180 160 140
T C = 2 5℃
120 20V 17V 15V 12V 100 Common Emitter VGE = 15V T C = 2 5℃ TC = 125℃
Collector Current, IC [A]
Collector Current, IC [A]
120 100 80 60 40 20 0 0 2 4 6 8 10
80
VGE = 10V
60
40
20
0 0 2 4 6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4.0 Common Emitter VGE = 15V
50 Vcc = 600V load Current : peak of square wave 40
Collector-Emitter Voltage, VCE [V]
40A
3.5
Load Current [A]
30
3.0
IC = 25A
20
2.5
10
Duty cycle : 50% Tc = 100℃ Powe Dissipation = 60W 0.1 1 10 100 1000
2.0 25 50 75 100 125
0
Case Temperature, TC [℃]
Frequency [kHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter TC = 25℃
20 Common Emitter TC = 125℃
Collector-Emitter Voltage, VCE [V]
16
Collector-Emitter Voltage, VCE [V]
16
12
12
8
8
40A 4 25A IC = 12.5A 0 0 4 8 12 16 20
4
40A 25A IC = 12.5A
0 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2003 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FGA25N120AND Rev. A
FGA25N120AND
4000 3500 3000 Common Emitter VGE = 0V, f = 1MHz T C = 25℃ 100 Ciss
Switching Time [ns]
Capacitance [pF]
2500 2000 1500
tr
td(on)
Coss 1000 Crss 500 0 1 10
Common Emitter VCC = 600V, VGE = ± 15V IC = 25A T C = 2 5℃ T C = 125℃ 10 0 10 20 30 40 50 60 70
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG [Ω ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Loss [mJ]
Switching Time [ns]
Common Emitter VCC = 600V, VGE = ± 15V IC = 25A TC = 25℃ TC = 125℃
td(off) 10
Common Emitter VCC = 600V, VGE = ± 15V IC = 25A T C = 2 5℃ T C = 125℃
Eon
100 tf
Eoff
1
10 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Gate Resistance, RG [Ω ]
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter VGE = ± 15V, RG = 10Ω T C = 2 5℃ TC = 125℃
Common Emitter VGE = ± 15V, RG = 10Ω T C = 25℃ T C = 125℃
td(off)
100
Switching Time [ns]
Switching Time [ns]
tr
100 tf
td(on)
10
20
30
40
50
10
20
30
40
50
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
©2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
FGA25N120AND Rev. A
FGA25N120AND
16 Common Emitter VGE = ± 15V, RG = 10Ω T C = 2 5℃ T C = 125℃ 14 Eon Common Emitter RL = 24Ω TC = 25℃ 600V 400V 8 6 4 2 0 10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 200 Vcc = 200V
Gate-Emitter Voltage, VGE [V]
10
12 10
Switching Loss [mJ]
Eoff 1
0.1
Collector Current, IC [A]
Gate Charge, Qg [nC]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 100 Ic MAX (Pulsed) 50µ s Ic MAX (Continuous) 100µ s
Collector Current, Ic [A]
10 1ms DC Operation 1
Collector Current, IC [A]
10
Single Nonrepetitive 0.1 Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000
o
0.01
1 1 10
Safe Operating Area VGE = 15V, TC = 125℃ 100 1000
Collector - Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
10
Thermal Response [Zthjc]
1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 single pulse 1E-3 1E-5
Pdm Pdm t1 t1 t2 t2 Duty factor D = t1 // t2 Duty factor D = t1 t2 Peak Tj = Pdm × Zthjc + TC Peak Tj = Pdm × Zthjc + TC
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2003 Fairchild Semiconductor Corporation FGA25N120AND Rev. A
FGA25N120AND
50
30
Forward Current , IF [A]
10
Reverse Recovery Currnet , Irr [A]
25
di/dt = 200A/µs
20
TJ = 125 C
o
15 di/dt = 100A/µs 10
1
TJ = 25 C
o
TC = 125℃ TC = 25℃ 0.1 0.0 0.4 0.8 1.2 1.6 2.0
5
0 5 10 15 20 25
Forward Voltage , V F [V]
Forward Current , I F [A]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
4000
300 di/dt = 100A/µs
Stored Recovery Charge , Qrr [nC]
3000 di/dt = 200A/µs
Reverse Recovery Time , t rr [ns]
200 di/dt = 200A/µs
2000 di/dt = 100A/µs
100
1000
0 5 10 15 20 25
0 5 10 15 20 25
Forward Current , IF [A]
Forward Current , I F [A]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©2003 Fairchild Semiconductor Corporation
FGA25N120AND Rev. A
FGA25N120AND
Package Dimension
TO-3P
15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05
+0.15
12.76 ±0.20
19.90 ±0.20
16.50 ±0.30
3.00 ±0.20 1.00 ±0.20
3.50 ±0.20
2.00 ±0.20
13.90 ±0.20
23.40 ±0.20
18.70 ±0.20
1.40 ±0.20
5.45TYP [5.45 ±0.30]
5.45TYP [5.45 ±0.30]
0.60 –0.05
+0.15
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation FGA25N120AND Rev. A
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LIFE SUPPORT POLICY
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2003 Fairchild Semiconductor Corporation
Rev. I2