FGA25N120FTD

FGA25N120FTD 1200V, 25A Field Stop Trench IGBT April 2008 FGA25N120FTD 1200V, 25A Field Stop Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE(sat) =1.6V @ IC = 25A • High input impedance • RoHS complaint tm General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Applications • Induction heating and Microvewave oven • Soft switching applications C G TO-3P GCE E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IC PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode continuous Forward current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 100oC @ TC = 25 C @ TC = 100 C o o Ratings 1200 ± 25 @ TC = 25oC @ TC = 100 C o Units V V A A A A W W o o o 50 25 75 25 313 125 -55 to +150 -55 to +150 300 C C C Notes: 1: Repetitiverating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.4 1.42 40 Units o o o C /W C /W C /W ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA25N120FTD Rev. A FGA25N120FTD 1200V, 25A Field Stop Trench IGBT Package Marking and Ordering Information Device Marking FGA25N120FTD Device FGA25N120FTDTU Package TO-3PN Packaging Type - Max Qty Qty per Tube - per Box 30 Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 - - 1 ±250 V mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125oC 3.5 6 1.6 1.88 7.5 2 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3830 130 86 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 25A, VGE = 15V VCC = 600V, IC = 25A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 600V, IC = 25A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 25oC 48 96 210 215 0.34 0.90 1.24 44 113 232 390 0.38 1.39 1.77 160 30 78 1.20 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC FGA25N120FTD Rev. A 2 www.fairchildsemi.com FGA25N120FTD 1200V, 25A Field Stop Trench IGBT Electrical Characteristics of the Diode Symbol VFM trr Irr Qrr TC = 25°C unless otherwise noted Parameter Diode Forward Voltage IF = 25A Test Conditions TC = 25oC TC = 125oC TC = 25oC TC = 125oC o Min. - Typ. 1.4 1.42 770 895 48 50 18 23 Max 1.8 - Units V Diode Reverse Recovery Time IES =25A, dIES/dt = 200A/µs ns Diode Reverse Recovery Time TC = 25oC TC = 125 C TC = 25oC TC = 125 C o A µC Diode Reverse Recovery Charge FGA25N120FTD Rev. A 3 www.fairchildsemi.com FGA25N120FTD 1200V, 25A Field Stop Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 150 Collector Current, IC [A] TC = 25 C o Figure 2. Typical Output Characteristics 180 TC = 125 C o 20V 17V 15V 150 Collector Current, IC [A] 20V 17V 15V 120 90 60 30 8V 12V 120 12V 90 60 30 10V 9V 8V 7V VGE = 6V 10V 9V 7V VGE = 6V 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 120 Common Emitter VCE = 20V Collector Current, IC [A] 90 Collector Current, IC [A] TC = 25 C TC = 125 C o o TC = 25 C o 90 T = 125oC C 60 60 30 30 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 0 0 3 6 9 12 Gate-Emitter Voltage,VGE [V] 15 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 50A Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25 C o 2.7 2.4 2.1 16 12 25A 1.8 1.5 IC = 10A 8 50A 1.2 0.9 25 4 25A IC = 10A 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGA25N120FTD Rev. A 4 www.fairchildsemi.com FGA25N120FTD 1200V, 25A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Figure 8. Capacitance Characteristics 6000 5000 Capacitance [pF] Cies Common Emitter VGE = 0V, f = 1MHz TC = 25 C o Collector-Emitter Voltage, VCE [V] 16 4000 3000 2000 1000 0 Coes 12 8 4 IC = 10A 25A 50A Cres 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate charge Characteristics 15 Common Emitter o Figure 10. SOA Characteristics 200 100 10µs Gate-Emitter Voltage, VGE [V] TC = 25 C 12 VCC = 200V Collector Current, Ic [A] 600V 400V 100µs 10 1ms 10 ms 9 1 DC 6 3 0.1 *Notes: o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 0 50 100 150 Gate Charge, Qg [nC] 200 0.01 1 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] Figure 11. Turn-on Characteristics vs. Gate Resistance 500 Figure 12. Turn-off Characteristics vs. Gate Resistance 5500 Common Emitter VCC = 600V, VGE = 15V IC = 25A Switching Time [ns] Switching Time [ns] tr TC = 25 C o 1000 TC = 125 C o td(off) 100 td(on) Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C o o tf 100 50 10 0 20 40 60 80 Gate Resistance, RG [Ω] 100 0 20 40 60 80 100 Gate Resistance, RG [Ω] FGA25N120FTD Rev. A 5 www.fairchildsemi.com FGA25N120FTD 1200V, 25A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 500 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o Figure 14. Turn-off Characteristics vs. Collector Current 1500 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o 1000 Switching Time [ns] tr Switching Time [ns] TC = 125 C TC = 125 C tf 100 td(on) td(off) 10 5 10 20 30 40 45 Collector Current, IC [A] 100 5 10 20 30 40 45 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 10000 Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C o o Figure 16. Switching Loss vs. Collector Current 10000 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o Eoff Switching Loss [µJ] Switching Loss [µJ] TC = 125 C Eoff 1000 Eon 1000 Eon 100 200 30 0 20 40 60 80 Gate Resistance, RG [Ω] 100 0 10 20 30 40 50 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics 100 Figure 18. Forward Characteristics 30 10 Collector Current, IC [A] Forward Current, IF [A] TJ = 125 C o TJ = 25 C o 10 1 Safe Operating Area o VGE = 15V, TC = 125 C TC = 25 C TC = 125 C o o 1 1 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] 0.1 0.0 0.5 1.0 1.5 Forward Voltage, VF [V] 2.0 FGA25N120FTD Rev. A 6 www.fairchildsemi.com FGA25N120FTD 1200V, 25A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Current 60 Reverse Recovery Currnet, Irr [A] Figure 20. Stored Charge 30 Stored Recovery Charge, Qrr [µC] 50 200A/µs 20 200A/µs di/dt = 100A/µs 40 di/dt = 100A/µs 10 30 20 10 15 20 25 Forward Current, IF [A] 30 0 10 15 20 25 30 Forward Current, IF [A] Figure 21. Reverse Recovery Time 1200 Reverse Recovery Time, trr [ns] 1000 di/dt = 100A/µs 800 200A/µs 600 400 10 15 20 25 30 Forward Current, IF [A] Figure 22. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] 1 10 FGA25N120FTD Rev. A 7 www.fairchildsemi.com FGA25N120FTD 1200V, 25A Field Stop Trench IGBT Mechanical Dimensions TO-3PN Dimensions in Millimeters FGA25N120FTD Rev. A 8 www.fairchildsemi.com FGA25N120FTD 1200V, 25A Field Stop Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FGA25N120FTD Rev. A 9 www.fairchildsemi.com