FGD2N40

FGD2N40L 400V N-Channel Logic Level IGBT March 2006 FGD2N40L 400V N-Channel Logic Level IGBT Features VCE(SAT) = 1.6V @ IC = 2.5A, VGE = 2.4V 6kV ESD Protected High Peak Current Density TO-252 (D-Pak) Low VGE(TH) General Description This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine ignition applications. The gate is ESD protected with a zener diode. Applications Small Engine Ignition Applications ©2006 Fairchild Semiconductor Corporation FGD2N40L Rev. A 1 www.fairchildsemi.com FGD2N40L 400V N-Channel Logic Level IGBT Device Maximum Ratings TA= 25°C unless otherwise noted Symbol BVCES IC ICP VGES VGEP PD TJ TSTG ESD Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous(DC) Collector Current Pulsed(100µs) Gate to Emitter Voltage Continuous(DC) Gate to Emitter Voltage Pulsed Power Dissipation Total TC = 25oC Operating Junction Temperature Range Storage Junction Temperature Range Electrostatic Discharge Voltage at 100pF, 1500Ω Ratings 400 7 29 ±8 ±10 29 -40 to 150 -40 to 150 6 Units V A A V V W °C °C kV Package Marking and Ordering Information Device Marking FGD2N40 Device FGD2N40L Package D-PAK Tape Width 12mm / 16mm Quantity 2500 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVCES BVGES ICES IGES Collector to Emitter Breakdown Voltage Gate-Emitter Breakdown Voltage Collector to Emitter leakage Current Gate-Emitter Leakage Current IC = 1mA, VGE = 0V IGES = ±1mA VCE = 320V VGE = ±8 TC = +25oC 400 ±10 TC = +125oC 10 250 ±10 V V µA µA µA On Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 2.5A, VGE = 2.4V(NOTE1) 1.3 1.6 V Dynamic Characteristics QG(ON) VGEP VGE(TH) CIES RG Gate Charge Gate to Emitter Plateau Voltage Gate to Emitter Threshold Voltage Input Capacitance Internal Gate Series Resistance IC = 2.5A, VCE = 300V, VGE = 10V IC = 2.5A, VCE = 300V IC = 1.0mA, VCE = VGE VCE = 10V, VGE = 0V, f =1MHz 0.70 11 1.8 0.85 357 300 1.2 nC V V pF ohms Switching Characteristics tON td(ON)I trI tOFF td(OFF)I tfI Turn-On Time Current Turn-On Delay Time Current Rise Time Turn-Off Time Current Turn-Off Delay Time Current Fall Time VCC = 300V, IC = 2.5A, VGE = 4V, RL = 120Ω, RG = 51Ω, TJ = 25oC 0.142 0.047 0.095 2.152 0.650 1.529 µs µs µs µs µs µs Thermal Characteristics RθJC Thermal Resistance Junction-Case TO-252 (D-Pak) 4.29 °C/W Notes: 1: Pulse Duration = 100 µsec 2 FGD2N40L Rev. A www.fairchildsemi.com FGD2N40L 400V N-Channel Logic Level IGBT Typical Performance Characteristics ICE, COLLECTOR TO EMITTER CURRENT (A) 25 Waveforms in descending order V GE = 8 V V GE = 6 V V GE = 5 V V GE = 4 V V GE = 3 .5V V GE = 2 .4V V GE = 2 .2V V GE = 2 V ICE, COLLECTOR TO EMITTER CURRENT (A) 30 30 Waveforms in descending order V GE = 8 V V GE = 6 V 20 V GE = 5 V V GE = 4 V V GE = 3 .5V 15 V GE = 2 .4V V GE = 2 .2V 10 V GE = 2 V 25 20 15 10 5 T J = -40 C PULSE DURATION = 100 µ s o 5 T J = 25 C PULSE DURATION = 100 µ s o 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V CE, COLLECTOR TO EMITTER VOLTAGE (V) V CE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Collector Current Vs. Collector to Emitter On-State Voltage Figure 2. Collector Current Vs. Collector to Emitter On-State Voltage ICE, COLLECTOR TO EMITTER CURRENT (A) 25 W aveforms in descending order V GE = 8 V V GE = 6 V V GE = 5 V V GE = 4 V V GE = 3 .5V V GE = 2 .4V V GE = 2 .2V V GE = 2 V ICE, COLLECTOR TO EMITTER CURRENT (A) 30 30 Waveforms in descending order V GE = 8V V GE = 6V 20 V GE = 5V V GE = 4V V GE = 3.5V 15 V GE = 2.4V V GE = 2.2V 10 V GE = 2V 25 20 15 10 5 T J = 70 C PULSE DURATION = 100 µ s o 5 T J = 1 25 C PULSE DURATION = 100µ s o 0 1 .0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 .0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V CE , COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector Current Vs. Collector to Emitter On-State Voltage Figure 4. Collector Current Vs. Collector to Emitter On-State Voltage VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.5 V GE = 4 V 3.0 PULSE DURATIO N = 100 µ s ICE = 1 5A 2.5 3.5 V GE = 5 V 3.0 PULSE DURAT IO N = 100 µ s ICE = 1 5A 2.5 2.0 ICE = 8 A 1.5 2.0 ICE = 8 A 1.5 1.0 ICE = 2 .5A 1.0 I CE = 2 .5A 0.5 - 40 -20 0 20 40 60 80 o 0.5 - 40 -20 0 20 40 60 80 100 o 100 120 140 120 140 T J , JUNCTION TEMPERATURE ( C) T J , JU N CTION TEMPER ATU R E ( C) Figure 5. Collector to Emitter Saturation Voltage Vs. Junction Temperature Figure 6. Collector to Emitter Saturation Voltage Vs. Junction Temperature 3 FGD2N40L Rev. A www.fairchildsemi.com FGD2N40L 400V N-Channel Logic Level IGBT Typical Performance Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (V) 7 6 5 4 3 2 1 0 1.0 1.5 2.0 2.5 ICE = 2.5A DUTY CYCLE < 0.5% PULSE DURATION = 250µs o TJ = -40 C VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 8 7 6 5 4 3 2 1 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ICE = 2.5A ICE = 8A ICE = 15A DUTY CYCLE < 0.5% PULSE DURATION = 250µs o TJ = 25 C ICE = 15A ICE = 8A 3.0 3.5 4.0 4.5 5.0 VGE, GATE TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) Figure 7. Collector to Emitter On-State Voltage Vs. Gate to Emitter Voltage Figure 8. Collector to Emitter On-State Voltage Vs. Gate to Emitter Voltage VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 7 6 5 4 3 2 1 ICE = 2.5A 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ICE = 8A ICE = 15A DUTY CYCLE < 0.5% PULSE DURATION = 250µs o TJ = 70 C 8 7 6 5 4 3 ICE = 8A 2 1 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ICE = 2.5A DUTY CYCLE < 0.5% PULSE DURATION = 250µs o TJ = 125 C ICE = 15A VGE, GATE TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) Figure 9. Collector to Emitter On-State Voltage Vs. Gate to Emitter Voltage Figure 10. Collector to Emitter On-State Voltage Vs. Gate to Emitter Voltage 1.2 1000 ICE = 1 m A V CE = V GE GATE TO EMITTER THRESHOLD VOLTAGE C IES 1.1 C, CAPACITANCE (pF) VGE(TH), (NORMALIZED) 1.0 100 C OES 0.9 C RES 0.8 10 0.7 V GE = 0 V , f = 1M H z TC = 25 C o 0.6 - 40 -20 0 20 40 60 80 100 120 o 1 140 160 0 .1 1 10 100 T J , JUN CTION TEMPERATUR E( C) V C E , C O LLEC TO R TO EM ITTE R V OLTA GE (V ) Figure 11. Normalized Gate to Emitter Threshold Voltage Vs. Junction Temperature 4 FGD2N40L Rev. A Figure 12. Capacitance Vs. Collector to Emitter Voltage www.fairchildsemi.com FGD2N40L 400V N-Channel Logic Level IGBT Typical Performance Characteristics toff toff SWITCHING TIME (ns) SWITCHING TIME (ns) 1000 ton tfall 1000 tfall trise 100 ton trise 100 VCE = 300V, VGE = 4V, ICE = 2.5A, T J = 25 C o VCE = 300V, VGE = 4V, RGE = 51Ω, TJ = 25 C 0 5 10 15 20 25 o 0 50 100 150 200 250 300 ICE, COLLECTOR TO EMITTER CURRENT (A) RG, GATE RESISTANCE (Ω ) Figure 13. Switching Time Vs. Collector Current Figure 14. Switching Time Vs. Gate Resistance 10 VGE, GATE TO EMITTER VOLTAGE (V) IC = 2.5A, VCC = 300V 8 T J = 25 C o ICE, COLLECTOR TO EMITTER CURRENT (A) 25 o 125 C 20 o 150 C 15 -40 C 10 o o 25 C 6 4 2 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0 2 4 6 8 10 12 Qg, GATE CHARGE (nC) V GE , GATE TO EMITTER VOLTAGE (V) Figure 15. Gate Charge BVces, (NORMALIZED) COLLECTOR TO EMITTER BREAKDOWN VOLTAGE Figure 16. Transfer 1.12 1.10 1.08 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 -40 -20 0 20 40 60 80 100 120 o ICE = 1mA 140 160 TJ, JUNCTION TEMPERATURE ( C) Figure 17. Normalized Collector to Emitter Breakdown Voltage Vs. Junction Temperature 5 FGD2N40L Rev. A www.fairchildsemi.com FGD2N40L 400V N-Channel Logic Level IGBT TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 Preliminary No Identification Needed Full Production Obsolete Not In Production ©2006 Fairchild Semiconductor Corporation FGD2N40L Rev. A 6 www.fairchildsemi.com