FGD4536

FGD4536 360V, PDP IGBT March 2011 FGD4536 360V, PDP IGBT Features • High Current Capability • Low Saturation Voltage: VCE (sat) =1.59 V @ IC = 50 A • High Input Impedance • Fast Switching • RoHS Compliant General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Application • PDP System C D-PAK G E Absolute Maximum Ratings Symbol VCES VGES IC pulse(1)* PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 2 5o C @ TC = 25oC @ TC = 100oC Ratings 360 ± 30 220 125 50 -55 to +150 -55 to +150 300 Units V V A W W o o o C C C Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes: (1) Half Sine Wave, D < 0.01, pluse width < 1µsec * Ic_pluse limited by max Tj Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 1.0 62.5 Units o o C /W C /W ©2011 Fairchild Semiconductor Corporation FGD4536 Rev. A 1 www.fairchildsemi.com FGD4536 360V, PDP IGBT Package Marking and Ordering Information Device Marking FGD4536 Device FGD4536TM Package TO252 Reel Size 380mm Tape Width 16mm Quantity - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES ∆TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 360 - 0.4 - 100 ±400 V V/oC µA nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE IC = 20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 30A, VGE = 15V IC = 50A, VGE = 15V, TC = 25oC IC = 50A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 1295 56 43 pF pF pF 2.4 3.3 1.19 1.33 1.59 1.66 4.0 1.8 V V V V V Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 20A, VGE = 15V VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC 5 20 41 182 5 21 43 249 47 5.4 15 ns ns ns ns ns ns ns ns nC nC nC FGD4536 Rev. A 2 www.fairchildsemi.com FGD4536 360V, PDP IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 200 Collector Current, IC [A] TC = 25 C o Figure 2. Typical Output Characteristics 200 10V 20V 15V 12V TC = 125 C o 20V 15V 12V 150 VGE = 8V Collector Current, IC [A] 150 10V VGE = 8V 100 100 50 50 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 Figure 3. Typical Saturation Voltage Characteristics 200 Collector Current, IC [A] Common Emitter VGE = 15V Figure 4. Transfer Characteristics 200 Collector Current, IC [A] Common Emitter VCE = 10V TC = 25 C o TC = 25 C o 150 TC = 125 C o 150 TC = 125 C o 100 100 50 50 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 0 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 1.7 Collector-Emitter Voltage, VCE [V] 50A Figure 6. Saturation Voltage vs. VGE 20 Common Emitter Collector-Emitter Voltage, VCE [V] 1.6 1.5 1.4 TC = 25 C o 16 50A 12 30A 30A 1.3 1.2 1.1 1.0 20 IC = 20A Common Emitter VGE = 15V 8 IC = 20A 4 40 60 80 100 120 140 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGD4536 Rev. A 3 www.fairchildsemi.com FGD4536 360V, PDP IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Figure 8. Capacitance Characteristics 2400 Common Emitter VGE = 0V, f = 1MHz Collector-Emitter Voltage, VCE [V] 16 50A 2000 Capacitance [pF] TC = 25 C o 1600 Cies 12 30A 1200 800 Coes 8 IC = 20A 4 400 Cres 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate charge Characteristics 15 Gate-Emitter Voltage, VGE [V] Figure 10. SOA Characteristics 500 100 Collector Current, Ic [A] 10µs 100µs 1ms DC 12 200V 9 VCC = 100V 10 6 1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 3 Common Emitter TC = 25 C o 0.1 0 0 10 20 30 Gate Charge, Qg [nC] 40 50 0.01 0.1 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 11. Turn-on Characteristics vs. Gate Resistance 100 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 tf Switching Time [ns] 10 td(on) Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C o o Switching Time [ns] tr 100 td(off) Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C o o 1 0 10 20 30 40 50 10 0 10 20 30 40 50 Gate Resistance, RG [Ω ] Gate Resistance, RG [Ω ] FGD4536 Rev. A 4 www.fairchildsemi.com FGD4536 360V, PDP IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 100 Figure 14. Turn-off Characteristics vs. Collector Current 400 tr Switching Time [ns] Switching Time [ns] tf 100 10 td(on) Common Emitter VGE = 15V, RG = 5Ω TC = 25 C TC = 125 C o o Common Emitter VGE = 15V, RG = 5Ω TC = 25 C TC = 125 C o o td(off) 1 10 20 30 40 50 10 10 20 30 40 50 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 5000 Common Emitter VCC = 200V, VGE = 15V IC = 20A Figure 16. Switching Loss vs. Collector Current 1000 1000 Switching Loss [uJ] Switching Loss [uJ] TC = 25 C TC = 125 C o o 100 Eoff Eoff Eon 100 Eon 10 Common Emitter VGE = 15V, RG = 5Ω TC = 25 C TC = 125 C o o 10 0 10 20 30 40 Gate Resistance, RG [Ω ] 50 1 10 20 30 40 50 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics 500 100 Collector Current, IC [A] 10 1 Safe Operating Area VGE = 15V, TC = 125 C o 0.1 1 10 100 Collector-Emitter Voltage, VCE [V] 500 FGD4536 Rev. A 5 www.fairchildsemi.com FGD4536 360V, PDP IGBT Typical Performance Characteristics Figure 18.Transient Thermal Impedance of IGBT 2 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.01 -5 10 10 -4 10 -3 10 -2 10 -1 Rectangular Pulse Duration [sec] FGD4536 Rev. A 6 www.fairchildsemi.com FGD4536 360V, PDP IGBT Mechanical Dimensions D-PAK Dimensions in Millimeters FGD4536 Rev. A 7 www.fairchildsemi.com FGD4536 360V, PDP IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise® F-PFS™ AccuPower™ PowerTrench® PowerXS™ The Right Technology for Your Success™ FRFET® Auto-SPM™ ® Global Power ResourceSM Programmable Active Droop™ Build it Now™ ® QFET Green FPS™ CorePLUS™ CorePOWER™ QS™ Green FPS™ e-Series™ TinyBoost™ CROSSVOLT™ Quiet Series™ Gmax™ TinyBuck™ CTL™ RapidConfigure™ GTO™ TinyCalc™ Current Transfer Logic™ IntelliMAX™ ™ TinyLogic® DEUXPEED® ISOPLANAR™ TINYOPTO™ Dual Cool™ Saving our world, 1mW/W/kW at a time™ MegaBuck™ TinyPower™ EcoSPARK® MICROCOUPLER™ SignalWise™ TinyPWM™ EfficentMax™ MicroFET™ SmartMax™ TinyWire™ ESBC™ MicroPak™ SMART START™ TriFault Detect™ MicroPak2™ SPM® ® TRUECURRENT™* STEALTH™ MillerDrive™ µSerDes™ SuperFET® MotionMax™ Fairchild® SuperSOT™-3 Motion-SPM™ Fairchild Semiconductor® SuperSOT™-6 OptiHiT™ FACT Quiet Series™ UHC® SuperSOT™-8 OPTOLOGIC® FACT® ® ® Ultra FRFET™ ® SupreMOS OPTOPLANAR FAST ® UniFET™ SyncFET™ FastvCore™ VCX™ Sync-Lock™ FETBench™ VisualMax™ ®* FlashWriter® * PDP SPM™ XS™ FPS™ Power-SPM™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I51 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FGD4536 Rev. A 8 www.fairchildsemi.com