FGH40N60SF

FGH40N60SF 600V, 40A Field Stop IGBT March 2009 FGH40N60SF 600V, 40A Field Stop IGBT Features • High current capability • Low saturation voltage: VCE(sat) =2.3V @ IC = 40A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Applications • Inverter, UPS, SMPS, PFC E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C o o Ratings 600 ± 20 80 40 120 290 116 -55 to +150 -55 to +150 300 Units V V A A A W W o o o C C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.43 40 Units o o C /W C /W ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH40N60SF Rev.A FGH40N60SF 600V, 40A Field Stop IGBT Package Marking and Ordering Information Device Marking FGH40N60SF Device FGH40N60SFTU Package TO-247 Packaging Type Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES ∆TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 - 0.6 - 250 ±400 V V/oC µA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 40A, VGE = 15V IC = 40A, VGE = 15V, TC = 125oC 4.0 5.0 2.3 2.5 6.5 2.9 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2110 200 60 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 40A, VGE = 15V VCC = 400V, IC = 40A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 40A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC 25 42 115 27 1.13 0.31 1.44 24 43 120 30 1.14 0.48 1.62 120 14 58 54 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC FGH40N60SF Rev. A 2 www.fairchildsemi.com FGH40N60SF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 120 100 Collector Current, IC [A] TC = 25 C 20V 15V o Figure 2. Typical Output Characteristics 120 100 Collector Current, IC [A] TC = 125 C o 20V 15V 12V 80 60 40 12V 80 60 40 20 10V 10V 20 VGE = 8V VGE = 8V 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 3. Typical Saturation Voltage Characteristics 80 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 120 Common Emitter VCE = 20V Collector Current, IC [A] 60 TC = 25 C TC = 125 C o Collector Current, IC [A] o TC = 25 C TC = 125 C o o 80 40 40 20 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 0 6 8 10 12 Gate-Emitter Voltage,VGE [V] 13 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4.0 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = -40 C o 3.5 80A 16 3.0 2.5 40A 12 8 80A 2.0 1.5 1.0 25 IC = 20A 4 IC = 20A 40A 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGH40N60SF Rev. A 3 www.fairchildsemi.com FGH40N60SF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter o Figure 8. Saturation Voltage vs. VGE 20 Common Emitter o Collector-Emitter Voltage, VCE [V] TC = 25 C TC = 125 C 16 16 12 12 8 40A 80A 8 40A 80A 4 IC = 20A 4 IC = 20A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Capacitance Characteristics 5000 Common Emitter VGE = 0V, f = 1MHz Figure 10. Gate charge Characteristics 15 Common Emitter o 4000 Capacitance [pF] Ciss TC = 25 C o Gate-Emitter Voltage, VGE [V] TC = 25 C 12 Vcc = 100V 200V 300V 3000 Coss 9 2000 6 1000 Crss 3 0 0.1 0 1 10 Collector-Emitter Voltage, VCE [V] 30 0 50 100 Gate Charge, Qg [nC] 150 Figure 11. SOA Characteristics 400 Figure 12. Turn-on Characteristics vs. Gate Resistance 200 10µs 100 Collector Current, Ic [A] 100 10 100µs 1ms Switching Time [ns] 1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 10 ms DC tr 0.1 td(on) Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 125 C o o 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 10 0 10 20 30 40 Gate Resistance, RG [Ω] 50 FGH40N60SF Rev. A 4 www.fairchildsemi.com FGH40N60SF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance 5500 Common Emitter VCC = 400V, VGE = 15V IC = 40A Figure 14. Turn-on Characteristics vs. Collector Current 500 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o Switching Time [ns] TC = 125 C o Switching Time [ns] 1000 TC = 25 C td(off) o TC = 125 C tr 100 100 tf td(on) 10 0 10 20 30 40 50 Gate Resistance, RG [Ω] 10 20 40 60 80 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current 500 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C td(off) o o Figure 16. Switching Loss vs. Gate Resistance 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 125 C o o Switching Loss [mJ] Switching Time [ns] TC = 125 C Eon 100 tf 1 Eoff 10 20 0.2 0.3 40 60 80 0 10 Collector Current, IC [A] 20 30 40 Gate Resistance, RG [Ω] 50 Figure 17. Switching Loss vs. Collector Current 30 10 Switching Loss [mJ] Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C o o Figure 18. Load Current vs. Frequency 140 VCC = 400V 120 Eon load Current : peak of square wave Load Current [A] 100 80 60 40 20 Duty cycle : 50% T = 100 C C o 1 Eoff 0.1 20 30 40 50 60 70 80 0 1 Power Dissipation = 116W Collector Current, IC [A] 10 100 Frequency [kHz] 1000 FGH40N60SF Rev. A 5 www.fairchildsemi.com FGH40N60SF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 19.Turn off Switching SOA Characteristics 200 100 Collector Current, IC [A] 10 Safe Operating Area VGE = 15V, TC = 125 C o 1 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 20. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH40N60SF Rev. A 6 www.fairchildsemi.com FGH40N60SF 600V, 40A Field Stop IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Dimensions in Millimeters FGH40N60SF Rev. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com