FGH40N60SMDF

FGH40N60SMDF 600V, 40A Field Stop IGBT March 2011 FGH40N60SMDF 600V, 40A Field Stop IGBT Features • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A • High input impedance • Fast switching • Tighten Parameter Distribution • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential. Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating C G E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ T C = 25 C @ TC = 100oC o Ratings 600 ± 20 @ T C = 2 5oC @ TC = 100oC @ T C = 2 5oC @ TC = 100oC 80 40 120 40 20 120 349 174 -55 to +175 -55 to +175 300 Units V V A A A A A A W W o o o C C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH40N60SMDF Rev. B1 FGH40N60SMDF 600V, 40A Field Stop IGBT Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.43 1.45 40 Units o C/W oC/W oC/W Package Marking and Ordering Information Device Marking FGH40N60SMDF Device FGH40N60SMDF Package TO-247 Reel Size - Tape Width - Quantity 30 Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ΔBVCES ΔTJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250μA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 - 0.6 - 250 ±400 V V/oC μA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250μA, VCE = VGE IC = 40A, VGE = 15V IC = 40A, VGE = 15V, TC = 175oC 3.5 4.5 1.9 2.1 6.0 2.5 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 1880 180 50 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load, TC = 175oC VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load, TC = 25oC 12 20 92 13 1.3 0.26 1.56 15 22 116 16 2.1 0.6 2.7 16 28 120 17 2.0 0.34 2.34 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ FGH40N60SMDF Rev. B1 2 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Electrical Characteristics of the IGBT Symbol Qg Qge Qgc (Continued) Parameter Total Gate Charge Gate to Emitter Charge Gate to Collector Charge Test Conditions VCE = 400V, IC = 40A, VGE = 15V Min. - Typ. 119 13 58 Max 180 20 90 Units nC nC nC Electrical Characteristics of the Diode Symbol VFM Erec trr Qrr TC = 25°C unless otherwise noted Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time IF = 20A Test Conditions TC = 25oC TC = 175oC TC = 175oC IF =20A, dIF/dt = 200A/μs TC = 2 5oC TC = 175oC TC = 25oC TC = 175oC Min. - Typ. 1.3 1.15 138 70 210 250 1875 Max 1.7 100 350 - Units V uJ ns Diode Reverse Recovery Charge nC FGH40N60SMDF Rev. B1 3 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 120 TC = 25 C o Figure 2. Typical Output Characteristics 120 TC = 175 C o 20V 15V 12V 10V 20V 15V 12V 10V 100 Collector Current, IC [A] 100 Collector Current, IC [A] 80 60 40 20 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 VGE = 8V 80 60 40 20 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 VGE = 8V Figure 3. Typical Saturation Voltage Characteristics 120 100 Collector Current, IC [A] Common Emitter VGE = 15V TC = 25 C o Figure 4. Transfer Characteristics 120 Common Emitter VCE = 20V Collector Current, IC [A] TC = 25 C o 80 60 40 20 0 0 TC = 175 C o 90 T = 175oC C 60 30 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = -40 C o 2.5 80A 16 12 2.0 40A 8 40A 80A 1.5 IC = 20A 4 IC = 20A 1.0 25 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGH40N60SMDF Rev. B1 4 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter o Figure 8. Saturation Voltage vs. VGE 20 Common Emitter Collector-Emitter Voltage, VCE [V] TC = 25 C TC = 175 C o 16 16 12 12 8 40A 80A 8 80A 40A IC = 20A 4 IC = 20A 4 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Capacitance Characteristics 4000 Common Emitter VGE = 0V, f = 1MHz Figure 10. Gate charge Characteristics 15 Common Emitter o Gate-Emitter Voltage, VGE [V] TC = 25 C 3000 Capacitance [pF] TC = 25 C o 12 VCC = 200V 400V 300V Cies 9 2000 6 1000 Coes Cres 3 0 0.1 0 1 10 Collector-Emitter Voltage, VCE [V] 30 0 40 80 Gate Charge, Qg [nC] 120 Figure 11. SOA Characteristics 300 100 Collector Current, Ic [A] 1ms 10μs 100μs Figure 12. Turn-on Characteristics vs. Gate Resistance 100 tr 10 DC Switching Time [ns] 10 ms td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 175 C o o 1 0.1 *Notes: 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 1 0 10 20 30 40 Gate Resistance, RG [Ω] 50 FGH40N60SMDF Rev. B1 5 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance 1000 Figure 14. Turn-on Characteristics vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 6Ω td(off) TC = 25 C o Switching Time [ns] Switching Time [ns] 100 tf 100 TC = 175 C o tr 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 175 C o o 10 td(on) 1 0 10 20 30 40 50 1 20 30 40 50 60 70 80 Gate Resistance, RG [Ω] Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current 1000 Figure 16. Switching Loss vs. Gate Resistance 5 Eon td(off) Switching Time [ns] 100 Switching Loss [mJ] 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 175 C o o tf 10 Common Emitter VGE = 15V, RG = 6Ω TC = 25 C TC = 175 C o o 1 20 30 40 50 60 70 80 0.1 0 10 Collector Current, IC [A] 20 30 40 Gate Resistance, RG [Ω] 50 Figure 17. Switching Loss vs. Collector Current 6 Figure 18. Turn off Switching SOA Characteristics 200 100 Eon 1 Eoff Common Emitter VGE = 15V, RG = 6Ω TC = 25 C TC = 175 C o o Collector Current, IC [A] Switching Loss [mJ] 10 Safe Operating Area VGE = 15V, TC = 175 C o 0.1 20 30 40 50 60 70 80 1 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] FGH40N60SMDF Rev. B1 6 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating 90 80 Collector Current, IC [A] Common Emitter VGE = 15V Figure 20. Load Current Vs. Frequency 120 110 100 Collector Current, IC [A] Square Wave TJ < 175 C, D = 0.5, VCE = 400V VGE = 15/0V, RG = 6Ω o 70 60 50 40 30 20 10 25 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] 90 80 70 60 50 40 30 20 10 0 1k 10k 100k Switching Frequency, f [Hz] 1M Tc = 100 C o Tc = 75 C o Figure 21. Forward Characteristics 100 Figure 22. Reverse Current 1000 TC = 150 C o TC = 175 C o Reverse Current, ICES [uA] 100 10 1 0.1 TC = 25 C o Forward Current, IF [A] 10 TC = 25 C o TC = 75 C o TC = 25 C TC = 175 C o o 0.01 0.001 1 0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 0 100 200 300 400 Reverse Voltage,VR [V] 500 600 Figure 23. Stored Charge 2750 Stored Recovery Charge, Qrr [nC] Figure 24. Reverse Recovery Time 400 Reverse Recovery Time, trr [ns] 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0 TC = 25 C TC = 175 C o o 350 300 250 200 150 100 50 0 0 TC = 25 C TC = 175 C o o di/dt = 100A/μs di/dt = 200A/μs di/dt = 200A/μs di/dt = 100A/μs 5 10 15 20 25 30 35 Forwad Current, IF [A] 40 45 5 10 15 20 25 30 Forward Current, IF [A] 35 40 45 FGH40N60SMDF Rev. B1 7 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 25.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH40N60SMDF Rev. B1 8 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Mechanical Dimensions TO - 247AB (FKS PKG CODE 001) FGH40N60SMDF Rev. B1 9 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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The datasheet is for reference information only. Rev. I53 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FGH40N60SMDF Rev. B1 10 www.fairchildsemi.com