FGH60N60SFDTU

FGH60N60SFD 600V, 60A Field Stop IGBT August 2008 FGH60N60SFD 600V, 60A Field Stop IGBT Features • High current capability • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Applications • Induction Heating, UPS, SMPS, PFC E C G C G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C o o Ratings 600 ± 20 120 60 180 378 151 -55 to +150 -55 to +150 300 Units V V A A A W W o o o C C C Notes: 1: Repetitive test, Pulse width limited by max. juntion temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.33 1.1 40 Units o o C /W C /W o C /W ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH60N60SFD Rev. A FGH60N60SFD 600V, 60A Field Stop IGBT Package Marking and Ordering Information Device Marking FGH60N60SFD Device FGH60N60SFDTU Package TO-247 Packaging Type Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES ∆TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 - 0.4 - 250 ±400 V V/oC µA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 60A, VGE = 15V IC = 60A, VGE = 15V, TC = 125oC 4.0 5.0 2.3 2.5 6.5 2.9 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2820 350 140 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 60A, VGE = 15V VCC = 400V, IC = 60A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 60A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 25oC 22 42 134 31 1.79 0.67 2.46 22 44 144 43 1.88 1.0 2.88 198 22 106 62 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC FGH60N60SFD Rev. A 2 www.fairchildsemi.com FGH60N60SFD 600V, 60A Field Stop IGBT Electrical Characteristics of the Diode Symbol VFM trr Qrr TC = 25°C unless otherwise noted Parameter Diode Forward Voltage IF = 30A Test Conditions TC = 25oC TC = 125oC TC = 25oC IES = 30A, dIES/dt = 200A/µs TC = 125oC o Min. - Typ. 2.0 1.8 47 179 83 567 Max 2.6 - Units V Diode Reverse Recovery Time ns Diode Reverse Recovery Charge TC = 25oC TC = 125 C nC FGH60N60SFD Rev. A 3 www.fairchildsemi.com FGH60N60SFD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 150 Collector Current, IC [A] 12V TC = 25 C o Figure 2. Typical Output Characteristics 180 TC = 125 C o 20V 15V 20V 150 Collector Current, IC [A] 10V 15V 12V 10V 120 90 60 120 90 60 30 0 VGE = 8V VGE = 8V 30 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 3. Typical Saturation Voltage Characteristics 180 150 Collector Current, IC [A] Common Emitter VGE = 15V Figure 4. Transfer Characteristics 180 150 Collector Current, IC [A] Common Emitter VCE = 20V TC = 25 C TC = 125 C o o TC = 25 C o 120 90 60 30 0 0 TC = 125 C o 120 90 60 30 0 0 1 2 3 4 Gate-Emitter Voltage,VGE [V] 5 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4.0 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = -40 C o 3.5 120A 16 3.0 2.5 60A 12 2.0 IC = 30A 8 120A 1.5 1.0 25 4 60A IC = 30A 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGH60N60SFD Rev. A 4 www.fairchildsemi.com FGH60N60SFD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter o Figure 8. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Collector-Emitter Voltage, VCE [V] TC = 25 C 16 16 12 12 8 120A 8 60A IC = 30A 120A 4 4 60A IC = 30A 0 0 20 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Capacitance Characteristics 6000 Common Emitter VGE = 0V, f = 1MHz TC = 25 C Cies o Figure 10. Gate charge Characteristics 15 Common Emitter o Gate-Emitter Voltage, VGE [V] 5000 Capacitance [pF] TC = 25 C 12 300V VCC = 100V 200V 4000 3000 Coes 9 6 2000 1000 3 Cres 0 1 10 Collector-Emitter Voltage, VCE [V] 30 0 50 100 150 Gate Charge, Qg [nC] 200 Figure 11. SOA Characteristics 500 100 Collector Current, Ic [A] 10µs 100µs Figure 12. Turn off Switching SOA Characteristics 300 100 Collector Current, IC [A] 10 1ms 10 ms 1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature DC 10 0.1 Safe Operating Area 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 1 1 VGE = 15V, TC = 125 C o 10 100 1000 Collector-Emitter Voltage, VCE [V] FGH60N60SFD Rev. A 5 www.fairchildsemi.com FGH60N60SFD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance 300 Figure 14. Turn-off Characteristics vs. Gate Resistance 6000 Common Emitter VCC = 400V, VGE = 15V IC = 60A 100 Switching Time [ns] Switching Time [ns] tr 1000 TC = 25 C TC = 125 C td(off) o o td(on) Common Emitter VCC = 400V, VGE = 15V IC = 60A TC = 25 C TC = 125 C o o 100 tf 10 0 10 20 30 40 Gate Resistance, RG [Ω] 50 10 0 10 20 30 40 50 Gate Resistance, RG [Ω] Figure 15. Turn-on Characteristics vs. Collector Current 500 Common Emitter VGE = 15V, RG = 5Ω TC = 25 C o o Figure 16. Turn-off Characteristics vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 5Ω TC = 25 C o o Switching Time [ns] tr Switching Time [ns] TC = 125 C TC = 125 C td(off) 100 100 td(on) tf 10 0 20 40 60 80 100 120 Collector Current, IC [A] 10 0 20 40 60 80 100 120 Collector Current, IC [A] Figure 17. Switching Loss vs Gate Resistance 20 10 Common Emitter VCC = 400V, VGE = 15V IC = 60A Figure 18. Switching Loss vs Collector Current 30 Common Emitter VGE = 15V, RG = 5Ω 10 o Switching Loss [mJ] TC = 125 C Eon Switching Loss [mJ] TC = 25 C o TC = 25 C TC = 125 C o o Eon 1 Eoff 1 Eoff 0.5 0 0.1 10 20 30 40 Gate Resistance, RG [Ω] 50 0 20 40 60 80 100 120 Collector Current, IC [A] FGH60N60SFD Rev. A 6 www.fairchildsemi.com FGH60N60SFD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics 200 Figure 20. Reverse Current 500 100 Reverse Current , IR [µA] 100 Forward Current, IF [A] TC = 125 C o TJ = 125 C o TJ = 25 C o 10 TC = 75 C o 10 TJ = 75 C o 1 TC = 25 C TC = 125 C o o 0.1 TC = 25 C o 1 0 1 2 3 Forward Voltage, VF [V] 4 0.01 0 200 400 Reverse Voltage, VR [V] 600 Figure 21. Stored Charge 500 100 Reverse Current , IR [µA] Figure 22. Reverse Recovery Time 60 Reverse Recovery Time, trr [ns] TC = 125 C o 200A/µs 10 TC = 75 C o 50 1 di/dt = 100A/µs 40 0.1 TC = 25 C o 0.01 0 200 400 Reverse Voltage, VR [V] 600 30 5 20 40 60 Forward Current, IF [A] Figure 23. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.01 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH60N60SFD Rev. A 7 www.fairchildsemi.com FGH60N60SFD 600V, 60A Field Stop IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Dimensions in Millimeters FGH60N60SFD Rev. A 8 www.fairchildsemi.com FGH60N60SFD 600V, 60A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FGH60N60SFD Rev. A 9 www.fairchildsemi.com