FGH75N60SF

FGH75N60SF 600V, 75A Field Stop IGBT December 2008 FGH75N60SF 600V, 75A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =2.3V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Applications • Induction Heating, UPS, SMPS, PFC E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C o o Ratings 600 ± 20 150 75 225 452 181 -55 to +150 -55 to +150 300 Units V V A A A W W o o o C C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.276 40 Units o o C /W C /W ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH75N60SF Rev. A FGH75N60SF 600V, 75A Field Stop IGBT Package Marking and Ordering Information Device Marking FGH75N60SF Device FGH75N60SFTU Package TO-247 Packaging Type Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES ∆TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 - 0.4 - 250 ±400 V V/oC µA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 75A, VGE = 15V IC = 75A, VGE = 15V, TC = 125oC 4.0 5.0 2.3 2.6 6.5 2.9 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3850 375 147 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 75A, VGE = 15V VCC = 400V, IC = 75A, RG = 3Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 75A, RG = 3Ω, VGE = 15V, Inductive Load, TC = 25oC 26 58 138 22 2.7 1.0 3.7 25 62 138 21 3.2 1.3 4.5 250 30 130 60 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC FGH75N60SF Rev. A 2 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 225 200 Collector Current, IC [A] TC = 25 C o Figure 2. Typical Output Characteristics 225 TC = 125 C o 20V 15V 12V 10V 200 Collector Current, IC [A] 20V 15V 12V 10V 175 150 125 100 75 50 25 0 0 175 150 125 100 75 50 25 0 VGE = 8V VGE = 8V 2 4 6 Collector-Emitter Voltage, VCE [V] 8 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 3. Typical Saturation Voltage Characteristics 225 200 Collector Current, IC [A] Common Emitter VGE = 15V Figure 4. Transfer Characteristics 225 200 Collector Current, IC [A] Common Emitter VCE = 20V TC = 25 C TC = 125 C o o 175 150 125 100 75 50 25 0 0 TC = 25 C TC = 125 C o o 175 150 125 100 75 50 25 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 0 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4.0 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Common Emitter Collector-Emitter Voltage, VCE [V] 3.5 TC = -40 C o 150A 16 3.0 75A 12 2.5 IC = 40A 8 150A 2.0 4 75A IC = 40A 1.5 25 50 75 100 125 o Collector-Emitter Case Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGH75N60SF Rev. A 3 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter o Figure 8. Saturation Voltage vs. VGE 20 Common Emitter o Collector-Emitter Voltage, VCE [V] TC = 25 C TC = 125 C 16 16 12 12 8 150A 8 150A 75A IC = 40A 4 75A IC = 40A 4 0 0 20 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Capacitance Characteristics 7000 6000 Capacitance [pF] Common Emitter VGE = 0V, f = 1MHz Cies TC = 25 C o Figure 10. Gate charge Characteristics 15 Common Emitter Gate-Emitter Voltage, VGE [V] TC = 25 C o 12 VCC = 100V 200V 300V 5000 4000 3000 2000 1000 0 1 10 Collector-Emitter Voltage, VCE [V] 30 Cres Coes 9 6 3 0 0 50 100 150 200 Gate Charge, Qg [nC] 250 Figure 11. SOA Characteristics 500 10µs Figure 12. Load Current vs. Frequency 140 VCC = 400V load Current : peak of square wave 100 Collector Current, Ic [A] 100µs 120 Load Current [A] 10 100 80 60 40 20 Duty cycle : 50% T = 100 C C o 1ms 10 ms 1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature DC 0.1 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 Powe Dissipation = 181W 1 10 100 Frequency [kHz] 1000 FGH75N60SF Rev. A 4 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance 200 Figure 14. Turn-off Characteristics vs. Gate Resistance 6000 Common Emitter VCC = 400V, VGE = 15V IC = 75A TC = 25 C TC = 125 C o o 100 Switching Time [ns] tr Switching Time [ns] 1000 td(off) td(on) Common Emitter VCC = 400V, VGE = 15V IC = 75A TC = 25 C TC = 125 C o o 100 tf 10 0 10 20 30 40 Gate Resistance, RG [Ω ] 50 10 0 10 20 30 Gate Resistance, RG [Ω ] 40 50 Figure 15. Turn-on Characteristics vs. Collector Current 200 Common Emitter VGE = 15V, RG = 3Ω TC = 25 C o o Figure 16. Turn-off Characteristics vs. Collector Current 200 td(off) 100 Switching Time [ns] Switching Time [ns] TC = 125 C tr 100 tf td(on) Common Emitter VGE = 15V, RG = 3Ω TC = 25 C TC = 125 C o o 10 20 40 60 80 100 120 140 160 10 20 40 60 80 100 120 140 160 Collector Current, IC [A] Collector Current, IC [A] Figure 17. Switching Loss vs. Gate Resistance 15 Common Emitter VCC = 400V, VGE = 15V IC = 75A Figure 18. Switching Loss vs. Collector Current 30 Common Emitter VGE = 15V, RG = 3Ω TC = 25 C TC = 125 C o o 10 Switching Loss [mJ] 10 Eon TC = 125 C o Switching Loss [mJ] TC = 25 C o Eon Eoff Eoff 1 1 0 10 20 30 40 Gate Resistance, RG [Ω] 50 0.1 20 40 60 80 100 120 Collector Current, IC [A] 140 160 FGH75N60SF Rev. A 5 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 19. Turn off Switching SOA Characteristics 300 100 Collector Current, IC [A] 10 Safe Operating Area 1 1 VGE = 15V, TC = 125 C o 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 20.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.1 0.5 0.2 0.1 0.05 0.01 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGH75N60SF Rev. A 6 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Dimensions in Millimeters FGH75N60SF Rev. A 7 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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The datasheet is for reference information only. Rev. I37 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FGH75N60SF Rev. A 8 www.fairchildsemi.com