FGH80N60FD2

FGH80N60FD2 600V, 80A Field Stop IGBT April 2008 FGH80N60FD2 600V, 80A Field Stop IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and switching losses are essential. Applications • Induction Heating Application E C G C COLLECTOR (FLANGE) G E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 25°C @ TC = 100°C Ratings 600 ± 20 80 40 160 290 116 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. -- Max. 0.43 1.45 Units °C/W °C/W °C/W -- 40 ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH80N60FD2 Rev. A1 FGH80N60FD2 600V, 80A Field Stop IGBT Package Marking and Ordering Information Device Marking FGH80N60FD2 Device FGH80N60FD2TU Package TO-247 Packaging Type Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ---- -0.6 --- --250 ±400 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 40A, VGE = 15V IC = 40A, VGE = 15V, TC = 125°C 4.5 --5.5 1.8 2.05 7.0 2.4 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2110 200 60 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 400 V, IC = 40A, VGE = 15V VCC = 400 V, IC = 40A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 400 V, IC = 40A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C -----------------21 56 126 50 1 0.52 1.52 20 54 131 70 1.1 0.78 1.88 120 14 58 ---100 1.5 0.78 2.28 ----------ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC 2 FGH80N60FD2 Rev. A1 www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Electrical Characteristics of the Diode Symbol VFM trr Irr Qrr TC = 25°C unless otherwise noted Parameter Diode Forward Voltage IF = 15A Test Conditions TC = 25°C TC = 125°C TC = 25°C IES =15A, dIES/dt = 200A/µs TC = 125°C TC = 25°C TC = 125°C TC = 25°C TC = 125°C Min. - Typ. 1.2 1.0 61 125 4.8 8.4 146 525 Max 1.5 - Units V Diode Reverse Recovery Time ns Diode Reverse Recovery Current ns Diode Reverse Recovery Charge nC 3 FGH80N60FD2 Rev. A1 www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 160 TC = 25 C 20V 12V o Figure 2. Typical Saturation Voltage Characteristics 160 TC = 125 C 20V 12V 10V o 15V 15V Collector Current, IC [A] 120 10V Collector Current, IC [A] 120 80 80 40 VGE = 8V 40 VGE = 8V 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 Figure 3. Typical Saturation Voltage Characteritics 160 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 160 Common Emitter VCE = 20V TC = 25 C o Collector Current, IC [A] Collector Current, IC [A] 120 TC = 25 C TC = 125 C o o 120 TC = 125 C o 80 80 40 40 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Collector-Emitter Voltage, VCE [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.5 Collector-Emitter Voltage, VCE [V] 3.0 Figure 6. Saturation Voltage vs. Vge 20 Common Emitter TC = 25 C o 80A 16 2.5 12 2.0 40A 8 40A 1.5 20A Common Emitter VGE = 15V 4 IC = 20A 80A 1.0 25 50 75 100 o 0 125 4 Case Temperature, TC [ C] 8 12 16 Gate-Emitter Voltage, VGE [V] 20 4 FGH80N60FD2 Rev. A1 www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. Vge 20 Common Emitter TC = 125 C o (Continued) Figure 8. Capacitance Characteristics 5000 Common Emitter VGE = 0V, f = 1MHz Collector-Emitter Voltage, VCE [V] 16 Capacitance [pF] 4000 Ciss TC = 25 C o 12 3000 Coss 8 40A 2000 4 IC = 20A 80A 1000 Crss 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate Charge Characteristics 15 Common Emitter o Figure 10. SOA Characteeristics 400 Gate-Emitter Voltage, VGE [V] TC = 25 C 100 Collector Current, Ic [A] 200V 300V 10µs 100µs 12 Vcc = 100V 10 1ms 9 6 1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 10 ms DC 3 0.1 0 0 50 100 Gate Charge, Qg [nC] 150 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 11. Turn-Off Switching SOA Characteristics 200 Figure 12. Turn-On Characteristics vs. Gate Resistance 200 100 100 Collector Current, IC [A] Switching Time [ns] tr 10 td(on) 10 Safe Operating Area VGE = 20V, TC = 100 C o Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 125 C o o 1 1 5 10 100 1000 0 10 20 30 40 50 Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω] 5 FGH80N60FD2 Rev. A1 www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-Off Characteristics vs. Gate Resistance 2000 Common Emitter (Continued) Figure 14. Turn-On Characteristics vs. Collector Current 200 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C o o 1000 VCC = 400V, VGE = 15V IC = 40A TC = 25 C o 100 td(off) tr Switching Time [ns] TC = 125 C o 100 tf Switching Time [ns] td(on) 10 0 10 20 30 40 50 Gate Resistance, RG [Ω] 10 20 40 60 80 Collector Current, IC [A] Figure 15. Turn-Off Characteristics vs. Collector Current 500 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o Figure 16. Switching Loss vs Gate Resistance 5 Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 125 C o o Switching Time [ns] td(off) Switching Loss [mJ] TC = 125 C Eon Eoff 100 tf 1 20 20 40 60 80 0.3 0 10 Collector Current, IC [A] 20 30 40 Gate Resistance, RG [Ω] 50 Figure 17. Switching Loss vs Collector Current 10 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o Eon Switching Loss [mJ] TC = 125 C 1 Eoff 0.1 20 40 60 80 Collector Current, IC [A] 6 FGH80N60FD2 Rev. A1 www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Typical Performance Characteristics (Continued) Figure 18. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] Figure 19. Typical Forward Voltage Drop Figure 20. Stored Charge 1000 Stored Recovery Charge , Qrr [nC] Forward Current , IF [A] 10 800 125 C o TC = 125 C TC = 25 C o o 600 1 400 200 25 C o 0.1 0 1 2 Forward Voltage , VF [V] 3 0 100 200 di/dt ,[A/µs] 300 400 Figure 21. Reverse Recovery Time 160 140 120 125 C o Figure 22. Reverse Recovery Current 20 Reverse Recovery Current, Irr [A] Reverse Recovery Time, trr [ns] 15 100 80 60 40 20 5 100 25 C o 10 125 C o 5 25 C o 200 di/dt, [A/µs] 300 400 0 5 100 200 di/dt, [A/µ s] 300 400 7 FGH80N60FD2 Rev. A1 www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) 8 FGH80N60FD2 Rev. A1 www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT tm TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I28 No Identification Needed Full Production Obsolete Not In Production 9 FGH80N60FD2 Rev. A1 www.fairchildsemi.com