FGL35N120FTD

FGL35N120FTD 1200V, 35A Trench IGBT February 2010 FGL35N120FTD 1200V, 35A Trench IGBT Features • Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35A • High Input Impedance tm General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Applications • Induction Heating And Microwave Oven • Soft Switching Applications C G E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 100oC o Ratings 1200 ± 25 70 35 105 40 368 147 -55 to +150 -55 to +150 300 Units V V A A A A W W o o o C C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.34 0.9 25 Units o o C/W C/W oC/W ©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGL35N120FTD Rev. A FGL35N120FTD 1200V, 35A Trench IGBT Package Marking and Ordering Information Device Marking FGL35N120FTD Device FGL35N120FTDTU Package TO-264 Reel Size - Tape Width - Quantity 30 Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 - - 1 ±250 V mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 35mA, VCE = VGE IC = 35A, VGE = 15V IC = 35A, VGE = 15V, TC = 125oC 3.5 6.2 1.68 2.0 7.5 2.2 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 5090 180 95 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 35A, VGE = 15V VCC = 600V, IC = 35A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 600V, IC = 35A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC 34 63 172 107 2.5 1.7 4.2 33 66 180 146 3.1 2.1 5.2 210 42 101 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC FGL35N120FTD Rev. A 2 www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Electrical Characteristics of the Diode Symbol VFM trr Irr TC = 25°C unless otherwise noted Parameter Diode Forward Voltage IF = 35A Test Conditions TC = 25oC TC = 125oC TC = 25oC TC = 125oC 125oC TC = 25oC TC = TC = 25oC TC = 125oC Min. - Typ. 2.7 2.5 337 520 7.6 12.9 1292 3377 Max 3.4 - Units V Diode Reverse Recovery Time IF = 35A, di/dt = 200A/µs ns Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge A Qrr nC FGL35N120FTD Rev. A 3 www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 150 Collector Current, IC [A] TC = 25 C o Figure 2. Typical Output Characteristics 180 TC = 125 C o 20V 17V 15V 20V 17V 15V 12V 150 Collector Current, IC [A] 12V 120 90 10V 120 90 10V 60 9V 60 9V 30 VGE = 8V 30 0 0 VGE = 8V 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 3. Typical Saturation Voltage Characteristics 120 100 Collector Current, IC [A] Common Emitter VGE = 15V TC = 25 C Figure 4. Transfer Characteristics 120 100 Collector Current, IC [A] Common Emitter VCE = 20V TC = 25 C TC = 125 C o o o 80 60 40 20 0 0 TC = 125 C o 80 60 40 20 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.8 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 70A Figure 6. Saturation Voltage vs. VGE 20 Common Emitter Collector-Emitter Voltage, VCE [V] 2.6 2.4 2.2 2.0 TC = 25 C o 16 12 35A 1.8 1.6 1.4 1.2 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] IC = 18A 8 70A 35A 4 IC = 18A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGL35N120FTD Rev. A 4 www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter o Figure 8. Load Current vs. Frequency 150 VCC = 600V load Current : peak of square wave Collector-Emitter Voltage, VCE [V] TC = 125 C 16 Load Current [A] 120 12 90 8 70A 35A 60 4 30 Duty cycle : 50% T = 100 C C o 0 4 IC = 18A 0 20 Power Dissipation = 147W 8 12 16 Gate-Emitter Voltage, VGE [V] 1 10 100 Frequency [kHz] 1000 Figure 9. Capacitance Characteristics 8000 Common Emitter VGE = 0V, f = 1MHz Figure 10. Gate Charge Characteristics 15 Common Emitter Gate-Emitter Voltage, VGE [V] Cies TC = 25 C o TC = 25 C o 12 VCC = 200V 600V 6000 Capacitance [pF] 400V 9 4000 Coes 6 2000 Cres 3 0 1 10 Collector-Emitter Voltage, VCE [V] 30 0 0 50 100 150 200 Gate Charge, Qg [nC] 250 Figure 11. SOA Characteristics 400 100 Collector Current, Ic [A] 10µs Figure 12. Turn-on Characteristics vs. Gate Resistance 200 10 100µs 1ms 10 ms DC *Notes: Switching Time [ns] 100 tr 1 td(on) 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o Common Emitter VCC = 600V, VGE = 15V IC = 35A TC = 25 C TC = 125 C o o 0.01 1 20 10 100 1000 Collector-Emitter Voltage, VCE [V] 4000 0 10 20 30 40 50 Gate Resistance, RG [Ω ] FGL35N120FTD Rev. A 5 www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance 2000 Common Emitter VCC = 600V, VGE = 15V IC = 35A Figure 14. Turn-on Characteristics vs. Collector Current 200 1000 Switching Time [ns] Switching Time [ns] TC = 25 C TC = 125 C o o 100 td(off) tr tf td(on) Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C o o 100 50 0 10 20 30 Gate Resistance, RG [Ω ] 40 50 10 10 20 30 40 50 Collector Current, IC [A] 60 70 Figure 15. Turn-off Characteristics vs. Collector Current 600 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C o o Figure 16.Switching Loss vs. Gate Resistance 8 Eon td(off) Switching Loss [mJ] Switching Time [ns] TC = 125 C Eoff 1 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 35A TC = 25 C TC = 125 C o o 50 10 0.3 20 30 40 50 Collector Current, IC [A] 60 70 0 10 20 30 40 Gate Resistance, RG [Ω ] 50 Figure 17. Switching Loss vs. Collector Current 10 Figure 18. Turn off Switing SOA Characteristics 200 100 Eon Eoff Collector Current, IC [A] Switching Loss [mJ] 10 1 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C o o Safe Operating Area 0.3 10 1 20 30 40 50 Collector Current, IC [A] 60 70 1 VGE = 15V, TC = 125 C o 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] FGL35N120FTD Rev. A 6 www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Typical Performance Characteristics Figure 19. Forward Characteristics 50 Figure 20. Reverse Recovery Current 8 Reverse Recovery Currnet, Irr [A] di/dt = 200A/µs Forward Current, IF [A] 7 10 TJ = 125 C o 6 TJ = 25 C o 5 di/dt = 100A/µs 1 TC = 25 C o 4 0.2 0.0 TC = 125 C o 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 3.0 3 10 20 30 Forward Current, IF [A] 40 Figure 21. Stored Charge 1.4 Stored Recovery Charge, Qrr [µC] Figure 22. Reverse Recovery Time 600 Reverse Recovery Time, trr [ns] 1.2 di/dt = 200A/µs 500 di/dt = 100A/µs 400 di/dt = 200A/µs 1.0 di/dt = 100A/µs 300 0.8 200 0.6 10 20 30 40 100 10 20 30 40 Forward Current, IF [A] Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 1E-5 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGL35N120FTD Rev. A 7 www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT Mechanical Dimensions Dimensions in Millimeters FGL35N120FTD Rev. A 8 www.fairchildsemi.com FGL35N120FTD 1200V, 35A Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPM™ AccuPower™ FlashWriter® * ®* PowerTrench® FPS™ Auto-SPM™ PowerXS™ F-PFS™ Build it Now™ The Power Franchise® ® Programmable Active Droop™ FRFET® CorePLUS™ Global Power ResourceSM QFET® CorePOWER™ Green FPS™ QS™ CROSSVOLT™ TinyBoost™ Green FPS™ e-Series™ Quiet Series™ CTL™ TinyBuck™ Gmax™ RapidConfigure™ Current Transfer Logic™ TinyCalc™ GTO™ DEUXPEED® TinyLogic® Dual Cool™ IntelliMAX™ ™ TINYOPTO™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® ISOPLANAR™ TinyPower™ SignalWise™ EfficentMax™ MegaBuck™ TinyPWM™ SmartMax™ EZSWITCH™* MICROCOUPLER™ TinyWire™ ™* SMART START™ MicroFET™ TriFault Detect™ SPM® MicroPak™ TRUECURRENT™* STEALTH™ MillerDrive™ ® µSerDes™ SuperFET™ MotionMax™ Fairchild® SuperSOT™-3 Motion-SPM™ Fairchild Semiconductor® SuperSOT™-6 OPTOLOGIC® UHC® FACT Quiet Series™ OPTOPLANAR® SuperSOT™-8 ® ® Ultra FRFET™ FACT SupreMOS™ UniFET™ FAST® SyncFET™ VCX™ FastvCore™ Sync-Lock™ PDP SPM™ VisualMax™ FETBench™ XS™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I45 Preliminary First Production No Identification Needed Obsolete FGL35N120FTD Rev. A Full Production Not In Production 9 www.fairchildsemi.com