FGP5N60LS

FGP5N60LS 600V, 5A Field Stop IGBT February 2010 FGP5N60LS 600V, 5A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =1.7V @ IC = 5A • High Input Impedance • RoHS Compliant tm General Description Using novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential. Applications • HID ballast and Wall dimmer C G TO-220 GCE E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ T C = 2 5oC @ TC = 100oC @ T C = 25 C @ T C = 25 C @ TC = 100 C o o o Ratings 600 20 10 5 36 83 33 -55 to +150 -55 to +150 300 Units V V A A A W W o o o C C C Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.2, VGE=13.5V Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 1.5 62.5 Units o o C/W C/W ©2010 Fairchild Semiconductor Corporation FGP5N60LS Rev. A1 1 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT Package Marking and Ordering Information Device Marking FGP5N60LS Device FGP5N60LS Package TT220 Packaging Type Tube Qty per Tube 50ea Max Qty per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES BVCES TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 - 0.8 - 250 ±400 V V/oC A nA On Characteristics VGE(th) G-E Threshold Voltage Collector to Emitter Saturation Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 5A, VGE = 15V IC = 5A, VGE = 15V, TC = 125oC IC = 14A, VGE = 12V IC = 14A, VGE = 12V, TC = 125oC 2.7 3.9 1.7 1.8 2.7 3.1 4.5 2.1 3.2 V V V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 278 28 11 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 5A, VGE = 15V VCC = 400V, IC = 5A, RG = 10, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 5A, RG = 10, VGE = 15V, Inductive Load, TC = 25oC 4.3 1.6 36 118 38 130 168 4.1 1.8 37 150 80 168 248 18.3 1.6 7.9 ns ns ns ns J J J ns ns ns ns J J J nC nC nC FGP5N60LS Rev. A1 2 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 40 TC = 25 C o Figure 2. Typical Output Characteristics 40 TC = 125 C o Collector Current, IC [A] 30 Collector Current, IC [A] 20V 17V 15V 13.5V 12V 20V 17V 15V 13.5V 12V 30 10V 20 20 10V 10 VGE = 8V 10 VGE = 8V 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 Figure 3. Typical Saturation Voltage Characteristics 40 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 30 Common Emitter VCE = 20V Collector Current, IC [A] 30 Collector Current, IC [A] TC = 25 C TC = 125 C o o TC = 25 C TC = 125 C o o 20 20 10 10 0 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = -40 C o 2.5 10A 16 12 2.0 5A 8 5A 10A 1.5 IC = 2.5A 4 IC = 2.5A 1.0 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGP5N60LS Rev. A1 3 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25 C o Figure 8. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Collector-Emitter Voltage, VCE [V] 16 16 12 12 8 10A 8 10A 4 5A IC = 2.5A 4 5A IC = 2.5A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Capacitance Characteristics 600 Common Emitter VGE = 0V, f = 1MHz TC = 25 C Cies o Figure 10. Gate charge Characteristics 15 Common Emitter o Gate-Emitter Voltage, VGE [V] 500 Capacitance [pF] TC = 25 C 12 VCC = 100V 300V 200V 400 300 200 100 0 9 Coes Cres 6 3 0 1 10 Collector-Emitter Voltage, VCE [V] 30 0 5 10 15 Gate Charge, Qg [nC] 20 Figure 11. SOA Characteristics 100 10s Figure 12. Turn-on Characteristics vs. Gate Resistance 10 Collector Current, Ic [A] 10 Switching Time [ns] 100s 1ms 10ms DC Single Nonrepetitive td(on) 1 tr 0.1 Pulse T C = 25 C Curves must be derated linearly with increase in temperature o 1 Common Emitter VCC = 400V, VGE = 15V IC = 5A TC = 25 C TC = 125 C o o 0.01 0.1 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 0.5 0 10 20 30 40 Gate Resistance, RG [ ] 50 FGP5N60LS Rev. A1 4 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance 300 tf td(on) Figure 14. Turn-on Characteristics vs. Collector Current 10 Switching Time [ns] 100 td(off) Switching Time [ns] 1 tr Common Emitter VCC = 400V, VGE = 15V IC = 5A TC = 25 C TC = 125 C o o Common Emitter VGE = 15V, RG = 10 TC = 25 C TC = 125 C o o 10 0.1 0 10 20 30 40 50 Gate Resistance, RG [] 2 4 6 8 10 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current 800 Common Emitter VGE = 15V, RG = 10 TC = 25 C o o Figure 16. Switching Loss vs. Gate Resistance 1000 Common Emitter VCC = 400V, VGE = 15V IC = 5A TC = 25 C TC = 125 C o o Switching Time [ns] tf Switching Loss [J] TC = 125 C Eoff 100 100 Eon td(off) 20 2 4 6 8 10 30 0 10 20 30 40 50 Collector Current, IC [A] Gate Resistance, RG [] Figure 17. Switching Loss vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 10 o Figure 18. Turn off Switching SOA Characteristics 50 Switching Loss [J] TC = 125 C Eoff 100 Eon Collector Current, IC [A] TC = 25 C o 10 1 Safe Operating Area 10 2 4 6 8 10 0.1 1 VGE = 13.5V, TC = 125 C o 10 100 1000 Collector Current, IC [A] Collector-Emitter Voltage, VCE [V] FGP5N60LS Rev. A1 5 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT Typical Performance Characteristics Figure 19.Transient Thermal Impedance of IGBT 2 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.03 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 Rectangular Pulse Duration [sec] FGP5N60LS Rev. A1 6 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT Mechanical Dimensions TO-220AB FGP5N60LS Rev. A1 7 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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The datasheet is for reference information only. Rev. I47 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FGP5N60LS Rev. A1 8 www.fairchildsemi.com