FGPF30N30D

FGPF30N30D 300V, 30A PDP IGBT April 2007 FGPF30N30D 300V, 30A PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.4V @ IC = 20A • High Input Impedance • Fast switching • RoHS Complaint General Description Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30D offers the optimum solution for PDP applications where lowcondution loss is essential. Application . PDP System C G TO-220F 1 1.Gate 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol VCES VGES IC pulse(1) IF IFM PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100°C Description Collector-Emitter Voltage FGPF30N30D 300 ± 30 80 10 40 46 18.5 -55 to +150 -55 to +150 300 Units V V A A A W W o C oC oC Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 2.7 3.0 62.5 Units oC/W °C/W oC/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF30N30D Rev. A FGPF30N30D 300V, 30A PDP IGBT Package Marking and Ordering Information Device Marking FGPF30N30D Device FGFP30N30DTU Package TO-220F = 25oC unless otherwise noted Packaging Type Rail / Tube Max Qty Qty per Tube 50ea per Box - Electrical Characteristics T Symbol Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES C Parameter Test Conditions Min. Typ. Max. Units Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 300 ---- -0.6 --- --100 ± 250 V V/oC uA nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE IC =10A, VGE = 15V IC =20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 30A, VGE = 15V T C = 2 5oC IC = 30A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz ---685 95 30 ---pF pF pF 2.5 ----4.0 1.2 1.4 1.8 1.9 5.0 1.5 ---V V V V V Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 200 V, IC = 20A VGE = 15V VCC = 200 V, IC = 20A RG = 20Ω, VGE = 15V Resistive Load, TC = 125oC VCC = 200 V, IC = 20A RG = 20Ω, VGE = 15V Resistive Load, TC = 25oC -----------10 44 76 180 10 46 82 270 39 6 16 ---300 ------ns ns ns ns ns ns ns ns nC nC nC 2 FGPF30N30D Rev. A www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT Electrical Characteristics of DIODE TC = 25°C unless otherwise noted Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage IF = 10A Test Conditions TC = 25°C TC = 125°C TC = 25°C TC = 125°C TC = 25°C TC = 125°C TC = 25°C TC = 125°C Min. --------- Typ. 1.1 0.9 21 35 2.8 5.6 29.4 98 Max. 1.4 -------- Units V Diode Reverse Recovery Time IF = 10A dI/dt = 200A/µs ns Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge A nC 3 FGPF30N30D Rev. A www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT Typical Performance CharacteristicsTypical Saturation VoltageCharacteristics Figure 1. Typical Output Characteristics 80 70 Collector Current, IC [A] 20V 15V 12V 10V TC = 25 C o Figure 2. Typical Output Characteristics 80 20V TC = 125 C 12V 10V o 70 Collector Current, IC [A] 15V 60 50 40 30 20 10 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 VGE = 8V 60 50 40 30 20 10 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 VGE = 8V Figure 3. Saturation Voltage 80 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 80 Common Emitter VCE = 20V Collector Current, IC [A] Collector Current,IC [A] 60 TC = 25 C TC = 125 C o o T C = 25 C o 60 T = 125oC C 40 40 20 20 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 0 0 2 4 6 8 10 12 14 Gate-Emitter Voltage,VGE [V] 16 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.0 Collector-Emitter Voltage, VCE [V] 30A Figure 6. Saturation Voltage vs.VGE 20 Common Emitter Collector-Emitter Voltage, VCE [V] T = 25 C o 16 C 1.5 20A 12 10A 8 20A 1.0 4 IC = 10A 30A 0.5 25 Common Emitter VGE = 15V 0 50 75 100 o Case Temperature, TC [ C] 125 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 4 FGPF30N30D Rev. A www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs.VGE 20 Common Emitter Collector-Emitter Voltage, VCE [V] T = 125 C C o (Continued) Figure 8. Capacitance Characteristics 2500 16 1000 Capacitance [pF] Cies 12 Coes 8 100 Cres Common Emitter VGE = 0V, f = 1MHz T C = 25 C o 4 20A IC = 10A 30A 0 0 10 20 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate Charge Characteristics 15 Common Emitter R L = 10Ω Figure 10. SOA Characteristics 200 100 50us 100us Gate-Emitter Voltage, VGE [V] 12 T C = 25 C o Collector Current, Ic [A] 200V Vcc = 100V 10 DC Operation 1ms 9 1 Single Nonrepetitive o Pulse Tc=25 C Curves must be derated linearly with increase in temperature 6 3 0.1 0 0 8 16 24 Gate Charge, Qg [nC] 32 40 0.01 0.1 1 10 100 Collector-Emitter Voltage, V CE [V] 1000 Figure 11. Turn-On Characteristics vs. Gate Resistance 100 tr Figure 12. Turn Off Characteristics vs. Gate Resistance 1000 tf Switching Time [ns] td(on) Switching Time [ns] 10 Common Emitter VCC = 200V, VGE = 15V IC = 20A T C = 25 C TC = 125 C o o 100 td(off) Common Emitter V CC = 2 00V, V GE = 1 5V IC = 2 0A TC = 25 C o o 1 0 20 40 60 80 Gate Resistance, RG [Ω ] 100 10 0 10 20 30 T C = 1 25 C 40 50 60 70 Gate Resistance, R G [ Ω ] 5 FGPF30N30D Rev. A www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT Typical Performance Characteristics Figure 13. Turn-On Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 20Ω (Continued) Figure 14. Turn-Off Characteristics vs. Collector Current 500 tf tr 100 Switching Time [ns] T C = 25 C TC = 125 C o o Switching Time [ns] 100 td(off) td(on) 10 Common Emitter VGE = 15V, RG = 20Ω T C = 25 C T C = 125 C o o 5 10 15 20 25 30 5 10 15 20 25 30 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss vs Gate Resistance 500 Eoff Figure 16. Switching Loss vs Collector Current 1000 Eon Switching Loss [uJ] Switching Loss [uJ] 100 100 Eon Eoff Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C o o 10 Common Emitter VGE = 15V, RG = 20Ω T C = 25 C T C = 125 C o o 10 0 10 20 30 40 50 Gate Resistance, RG [Ω ] 60 70 1 0 5 10 15 20 25 30 Collector Current, IC [A] Figure 17. Transient Thermal Impedance of IGBT 10 Thermal Response [Zthjc] 1 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 0 .1 0 .0 1 1 E -3 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c t a n g u la r P u ls e D u r a t i o n [ s e c ] 6 FGPF30N30D Rev. A www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT Figure 18. Forward Characteristics Figure 19. Typical Reverse Recovery Current 5 I F = 1 0A Reverse Recovery Current , Irr [A] 100 T J = 1 25 C o Forward Current , IF [A] 4 T C = 25 C o 10 TJ = 25 C o 3 2 1 1 TC = 25 C 0.1 0.0 0.5 1.0 1.5 T C = 1 25 C 2.0 2.5 o o 0 100 di/dt [A/ µ s] 500 Forw ard Voltage , V F [ V] Figure 20. Typical Reverse Recovery Time 36 IF = 1 0A Reverse Recovery Time , trr [ns] Tc = 25 C 32 o 28 24 100 di/dt [A/µ s] 500 7 FGPF30N30D Rev. A www.fairchildsemi.com FGPF30N30D 300V, 30A PDP IGBT TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 8 FGPF30N30D Rev. A 15.87 ±0.20 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I26 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com