FJA13009
FJA13009
High Voltage Switch Mode Applications
• High Speed Switching • Suitable for Switching Regulator and Motor Control
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 12 24 6 130 150 - 65 ~ 150 Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) IEBO hFE VCE(sat) Parameter Collector-Emitter Sustaining Voltage Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 5A VCE = 5V, IC = 8A IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A IC = 5A, IB = 1A IC = 8A, IB = 1.6A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.5A VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 400 Typ. Max. 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA
VBE(sat) Cob fT tON tSTG tF
Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2% Pulse
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJA13009
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
10
VCE = 5V
IC = 3 IB
hFE, DC CURRENT GAIN
1
V BE(sat)
10
0.1
VCE (sat)
1 0.1
1
10
100
0.01 0.1
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
1000
10000
VCC =125V IC =5IB
Cob[pF], CAPACITANCE
tR, tD [ns], TURN ON TIME
100
1000
tR
10
100
tD, V BE(off)=5V
1 0.1
1
10
100
1000
10 0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
10000
100
tSTG, tF [ns], TURN OFF TIME
VCC =125V IC=5IB
10
IC[A], COLLECTOR CURRENT
µs
10 0µ
10
DC
s
1m
tSTG
s
1000
1
0.1
tF
100 0.1 0.01 1 10 100 1 10 100 1000
IC[A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Forward Bias Safe Operating Area
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJA13009
Typical Characteristics
100
140
IC[A], COLLECTOR CURRENT
10
PC[W], POWER DISSIPATION
Vcc=50V, IB1=1A, IB2 = -1A L = 1mH
120
100
80
1
60
40
0.1
20
0.01 10 100 1000 10000
0 0 25 50
o
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
Tc[ C], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJA13009
Package Dimensions
TO-3P
15.60 ±0.20
3.80 ±0.20
13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20
4.80 ±0.20 1.50 –0.05
+0.15
12.76 ±0.20
19.90 ±0.20
16.50 ±0.30
3.00 ±0.20 1.00 ±0.20
3.50 ±0.20
2.00 ±0.20
13.90 ±0.20
23.40 ±0.20
18.70 ±0.20
1.40 ±0.20
5.45TYP [5.45 ±0.30]
5.45TYP [5.45 ±0.30]
0.60 –0.05
+0.15
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. A, May 2003
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER
ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™
PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™
SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TruTranslation™ UHC™ UltraFET® VCX™
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2003 Fairchild Semiconductor Corporation
Rev. I2