FJN3313R

FJN3313R

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    FJN3313R - NPN Epitaxial Silicon Transistor - Fairchild Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
FJN3313R 数据手册
FJN3313R FJN3313R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) • Complement to FJN4313R 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 300 150 -55 ~ 150 Units V V V mA mW °C °C E B R2 Equivalent Circuit C R1 Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE (sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100µA VCE=0.2V, IC=5mA 1.5 0.042 2.2 0.047 0.5 1.1 2.9 0.052 250 3.7 68 0.3 V MHz pF V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJN3313R Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1
FJN3313R
1. 物料型号: - FJN3313R

2. 器件简介: - FJN3313R是一个带有内置偏置电阻的开关应用晶体管,适用于开关电路、反相器、接口电路和驱动电路。它与FJN4313R互补,内置偏置电阻分别为R1=2.2KΩ和R2=47KΩ。

3. 引脚分配: - 1. 发射极(Emitter) - 2. 集电极(Collector) - 3. 基极(Base)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):50V - VCEO(集电极-发射极电压):50V - VEBO(发射极-基极电压):10V - IC(集电极电流):100mA - PC(集电极功耗):300mW - TJ(结温):150°C - TSTG(存储温度):-55°C至150°C - 电气特性(Ta=25°C): - BVCBO(集电极-基极击穿电压):50V - BVCEO(集电极-发射极击穿电压):50V - ICBO(集电极截止电流):0.1µA - hFE(直流电流增益):68 - VCE(sat)(集电极-发射极饱和电压):0.3V - fT(电流增益-带宽积):250MHz - Cob(输出电容):3.7pF - VI(off)(输入关电压):0.5V - VI(on)(输入开电压):1.1V - R1(输入电阻):1.5KΩ至2.9KΩ - R1/R2(电阻比):0.042至0.052

5. 功能详解: - FJN3313R是一个NPN外延硅晶体管,具有内置偏置电阻,用于开关、反相器、接口和驱动电路。

6. 应用信息: - 适用于开关电路、反相器、接口电路和驱动电路。

7. 封装信息: - TO-92封装,具体尺寸如下: - 0.38mm(±0.10mm,-0.05mm) - 1.02mm(±0.10mm) - 3.86mm(最大值)
FJN3313R 价格&库存

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