FJN598JC

FJN598J FJN598J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 1 TO-92 1. Source 2. Gate 3. Drain Si N-channel Junction FET Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDO IG ID PD TJ TSTG Parameter Gate-Drain Voltage Gate Current Drain Current Power Dissipation Junction Temperature Storage Temperature Ratings -20 10 1 150 150 -55 ~ 150 Units V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVGDO VGS(off) IDSS lYFSl CISS CRSS Parameter Gate-Drain Breakdown Voltage Gate-Source Cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Output Capacitance Test Condition IG= -100uA VDS=5V, ID=1µA VDS=5V, VGS=0 VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz 100 0.4 1.2 3.5 0.65 Min. -20 Typ. -0.6 Max. -1.5 350 Units V V µA ms pF pF IDSS Classification Classification IDSS(µA) A 100 ~ 170 B 150 ~ 240 C 210 ~ 350 ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 FJN598J Typical Characteristics 500 450 400 IDSS = 200µA 1000 900 800 700 600 500 400 300 200 IDSS = 500µA ID[µA], DRAIN CURRENT 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 ID[µA], DRAIN CURRENT VGS = 0 VGS = -0.1V VGS = -0.2V VGS = -0.3V VGS = -0.4V VGS = -0.5V 0 1 2 3 4 5 6 7 VGS = 0 VGS = -0.1V VGS = -0.2V VGS = -0.3V VGS = -0.4V 100 0 VGS = -0.6V 8 9 10 VDS[V], DRAIN-SOURCE VOLTAGE VDS[V], DRAIN-SOURCE VOLTAGE Figure 1. ID-VDS Figure 2. ID-VDS lFSl [ms], FORWARD TRANSFER ADMITTANCE 1.6 10 VDS = 5V 1.4 ID[mA], DRAIN CURRENT VDS = 5V VGS = 0 f=1kHz 1.2 1.0 0.8 1 0.6 0.4 0.2 0.0 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.1 0.1 1 VGS[V], GATE-SOURCE VOLTAGE IDSS[mA], DRAIN CURRENT Figure 3. ID-VGS Figure 4. yFS-IDSS VGS(off)[V], GATE-SOURCE CUT-OFF VOLTAGE -10 CISS[pF], INPUT CAPACITANCE VDS = 5V ID = 1µA 100 -1 10 - 0.1 1 0.1 1 1 10 IDSS[mA], DRAIN CURRENT VDS[V], DRAIN-SOURCE VOLTAGE Figure 5. VGS(off)-IDSS Figure 6. CISS-VDS ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 FJN598J Typical Characteristics (Continued) 10 200 Crss[pF], OUTPUT CAPACITANCE VGS = 0 f = 1MHz 175 PD[mW], POWER DISSIPATION 150 125 1 100 75 50 25 0.1 1 10 0 0 25 o 50 75 100 125 150 VDS[V], DRAIN-SOURCE VOLTAGE Ta[ C], AMBIENT TEMPERATURE Figure 7. CRSS-VDS Figure 8. PD-TA -110 700 VNO [dB], OUTPUT NOISE VOLTAGE ZO[Ω ], OUTPUT RESISTANCE -112 VNO:VCC =4.5V VI = 0, A CURVE RL = 1KΩ IDSS:VDS=5V 600 ZO:VCC =4.5V VIN = 10mV f = 1kHz IDSS:VDS=5V -114 500 -116 400 -118 300 -120 10 100 1000 200 10 100 1000 IDSS[µA], DRAIN CURRENT IDSS[µA], DRAIN CURRENT Figure 9. VNO-IDSS Figure 10. ZO-IDSS ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 FJN598J Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1