FJN965
FJN965
For Output Amplifier of Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 0.75 150 -55 ~ 150 Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO BVEBO ICBO ICEO IEBO hFE1 hFE2 VCE (sat) fT Cob Parameter Collector-Emitter Voltage Emitter Base Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Band Width Product Collector Output Capacitance Test Condition IC=1mA, IB=0 IC=100µA, IC=0 VCB=10V, IE=0 VCE=10V, IB=0 VEB=7V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz 150 23 230 150 Min. 20 7 0.1 1 0.1 600 1 V MHz pF Typ. Max. Units V V µA µA µA
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
FJN965
Typical Characteristics
14
1.8
IB=200mA
12 1.6
VCE=2V
IC[mA], COLLECTOR CURRENT
10
IC[A], COLLECTOR CURRENT
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0
8
Ta=125 C
o
25 C
o
-40 C
o
6
4
IB=20mA
2
0 0 2 4 6 8 10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Base-Emitter On Voltage
1000
10
VCE=2V
Ta=125 C Ta=25 C
o
IC=30IB
VCE(sat)[V], SATURATION VOLTAGE
o
hFE, DC CURRENT GAIN
Ta=-40 C
o
1
100
0.1
Ta=125 C
0.01
o
Ta=25 C Ta=-40 C
o
o
10 0.01
0.1
1
10
100
1E-3 0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
10
100
VBE(sat)[V], SATURATION VOLTAGE
IC=30IB
IE=0,f=1MHZ
Cob[pF], OUTPUT CAPACITANCE
1 10
80
60
1
Ta=-40 C Ta=25 C Ta=125 C
0 0
0
40
20
0.1 0.01
0 0.1 1 10 100
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
FJN965
Typical Characteristics (Continued)
1.0 100
SP ingle ulse o T =25 C a
0.8 10
ICP t =10m s IC t =1s
PC [W PO ERDISSIPATIO ], W N
0.6
IC [A C LLE T RC R E T ], O C O U R N
0 25
o
1
0.4
0.1
0.2
0.0 50 75 100 125 150
0.01 0.1
1
10
100
Ta [ C], AM TTEM ATU BIEN PER RE
V E [V S T R T NV LT G ], A U A IO O A E C
Figure 7. Power Derating
Figure 8. Forward Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
FJN965
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
FJN965
Package Dimensions
TO-92
4.58 –0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 –0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 –0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER
ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™
PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™
SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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