FJNS7565

FJNS7565 FJNS7565 For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage 1 TO-92Mini 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 15 10 7 5 0.55 150 -55 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) Cob Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 10µA, IE = 0 IC = 1mA, IB = 0 IC = 10µA, IC = 0 VCB = 15V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 2A VCE = 2V, IC = 5A IC = 3A, IB = 60mA IC = 3A, IB = 60mA VCB = 20V, IE = 0, f = 1MHz 20 450 300 150 Min. 15 10 7 100 100 800 Typ. Max. Units V V V nA nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance 0.45 1.5 V V pF ©2003 Fairchild Semiconductor Corporation Rev. B, May 2003 FJNS7565 Typical Characteristics 14 1000 Ta= 125 C 12 0 Ta= 25 C 0 VCE=2V IC[A], COLLECTOR CURRENT 10 IB=60mA 8 IB=40mA IB=20mA hFE, DCC CURRENT GAIN Ta= -40 C 0 100 6 4 2 0 0 2 4 6 8 10 10 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC Current Gain VCE(SAT)[V], SATURATION VOLTAGE 1 VBE(SAT)[V], SATURATION VOLTAGE IC=50IB IC=50IB Ta= -40 C 1 0 Ta= 125 C 0.1 0 Ta= 25 C Ta= -40 C 0 0 Ta= 25 C 0 Ta= 125 C 0 0.01 0.1 1 10 0.1 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 12 80 VCE=2V IE=0,f=1MHZ 8 6 Ta= 125 C 4 0 Ta= 25 C 0 Ta= -40 C 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 COB[pF], OUTPUT CAPACITANCE 10 IC[A], COLLECTOR CURRENT 60 40 20 0 1 10 100 VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance ©2003 Fairchild Semiconductor Corporation Rev. B, May 2003 FJNS7565 Package Dimensions TO-92Mini Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. B, May 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2003 Fairchild Semiconductor Corporation Rev. I2