FJU5304DTU

FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit C B 1 I-PACK 1. Base 2. Collector 3. Emitter E Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) * Base Current (Pulse) TC = 25°C unless otherwise noted Parameter Value 700 400 12 4 8 2 4 30 150 -55 ~ 150 Units V V V A A A A W °C °C Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature * Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed Package Marking and Ordering Information Device Marking J5304D Device FJU5304DTU Package I-PAK Reel Size - Tape Width - Quantity 75 ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJU5304D Rev. A FJU5304D High Voltage Fast Switching Transistor Electrical Characteristics Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE VCE(sat) TC = 25°C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Conditions IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VCB = 400V, IB = 0 VEB = 12V, IC = 0 VCE = 5V, IC = 10mA VCE = 5V, IC = 2.0A IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.2A IC = 2.5A, IB = 0.5A Min. 700 400 12 Typ. Max Units V V V 100 250 1 10 8 40 0.7 1.0 1.5 1.1 1.2 1.3 0.6 0.1 2.9 0.2 µA µA mA V V V V V V µs µs µs µs VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.2A IC = 2.5A, IB = 0.5A tSTG tF tSTG tF Storage Time Fall Time Storage Time Fall Time VCLAMP=200V, IC=2.0A IB1=0.4A, VBE(off)=-5V, L=200µH VCC=250V, IC=2.0A IB1=0.4A, IB2=-0.4A, TP=30µs FJU5304D Rev. A 2 www.fairchildsemi.com FJU5304D High Voltage Fast Switching Transistor Typical Performance Characteristics Figure 1. Static Characterstic 4.0 3.5 100 Figure 2. DC Current Gain IB=300mA hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT TC=125 C o 3.0 IB=150mA 2.5 2.0 1.5 1.0 0.5 0.0 IB=100mA IB=50mA TC= - 25 C 10 o TC=25 C o 0 2 4 6 8 10 12 1 0.01 0.1 1 10 VCE [V]. COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 10 Figure 4. Base-Emitter Saturation Voltage 10 VCE(sat) [V], SATURATION VOLTAGE TC=125 C o 1 TC=25 C TC= - 25 C 0.1 o o VBE(sat) [V], SATURATION VOLTAGE IC = 5 IB IC = 5 IB 1 TC= - 25 C o o TC=125 C o TC=25 C 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time 10 Figure 6. Forward Biased Safe Operating Area 100 tSTG & tF [µs], SWITCHING TIME IC [A], COLLECTOR CURRENT tSTG 1 10 Pulse IC_MAX DC IC_MAX 10µs 1µs 1 tF 0.1 1ms 0.1 VCC=250V IC= 5 IB1= - 5 IB2 0.01 0.1 1 10 TC = 25 C Single Pulse 0.01 1 10 100 1000 o IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE FJU5304D Rev. A 3 www.fairchildsemi.com FJU5304D High Voltage Fast Switching Transistor Typical Performance Characteristics (Continued) Figure 7. Reverse Biased Safe Operating Area 10 9 Figure 8. Power Derating Curve PC [W], COLLECTOR POWER DISSIPATION IC [A], COLLECTOR CURRENT 8 7 6 5 4 3 2 1 0 0 100 200 300 400 500 Vcc=50V, L = 1mH IB1=1A, IB2 = -1A 40 20 0 600 700 800 900 1000 0 25 o 50 75 100 125 150 VCE [V], COLLECTOR-EMITTER VOLTAGE TC [ C], CASE TEMPERATURE FJU5304D Rev. A 4 www.fairchildsemi.com FJU5304D High Voltage Fast Switching Transistor Mechanical Dimensions I-PAK Dimensions in Millimeters FJU5304D Rev. A 5 www.fairchildsemi.com FJU5304D High Voltage Fast Switching Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I13 6 FJU5304D Rev. A www.fairchildsemi.com