FJV3106R

FJV3106R FJV3106R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to FJV4106R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R26 NPN Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 200 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE(sat) Cob fT VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10mA, IE=0 f=1.0MHz VCB=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=1mA 7 0.19 10 0.21 0.3 1.4 13 0.24 3.7 250 68 0.3 V pF MHz V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJV3106R Typical Characteristics 1000 100 VCE = 5V R1 = 10K R2 = 47K VCE =0.3V R1 = 10K R2 = 47K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN 100 10 10 1 1 0.1 1 10 100 0.1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Input On Voltage 10k 400 IC [µA], COLLECTOR CURRENT PC[mW], POWER DISSIPATION VCE = 5V R1 = 10K R2 = 47K 1k 350 300 250 100 200 150 10 100 50 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 o 75 100 125 150 175 VI(off)[V], INPUT OFF VOLTAGE T a[ C], AMBIENT TEMPERATURE Figure 3. Input Off Voltage Figure 4. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJV3106R Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FASTâ CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1