FJZ945
FJZ945
Audio Frequency Amplifier & High Frequency OSC.
• Complement to FJZ733 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz (Typ.)
1 3
2
SOT-623F
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 100 150 -55 ~ 150 Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) fT Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=40V, IE=0 VEB=3V, IC=0 VCE=6V, IC=1.0mA IC=100mA, IB=10mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=0.5mA f=1KHz, RS=500Ω 40 0.15 300 2.5 4.0 Min. 60 50 5 0.1 0.1 700 0.3 V MHz pF dB Typ. Max. Units V V V µA µA
Thermal Characteristics TC=25°C unless otherwise noted
Symbol RθJA Parameter Thermal Resistance, Junction to Ambient Max. 1250 Units °C/W
hFE Classification & Marking
Classification hFE Marking R 40 ~ 80 C2 O 70 ~ 140 C3 Marking Y 120 ~ 240 C1 G 200 ~ 400 C4 L 350 ~ 700 C5
C1
©2003 Fairchild Semiconductor Corporation Rev. B1, July 2003
FJZ945
Typical Characteristics
100
IB = 400µ A
IC[mA], COLLECTOR CURRENT
IB = 350 µ A
80
100
VCE=6V
IB = 300µ A IB = 250µ A
60
IC[mA], COLLECTOR CURRENT
80
0 0
IB = 200µ A
40
60
125 C
25 C
0
-25 C
IB = 150 µ A IB = 100 µ A
40
20
IB = 5 0 µ A
0
20
0
2
4
6
8
10
12
14
16
18
20
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Transfer Characteristic
Ta=125 C
0
VBE(sat)[V], SATURATION VOLTAGE
VCE=6V
IC=10IB
1
0
hFE, DC CURRENT GAIN
Ta=-25 C
Ta=25 C
100
0
Ta=-25 C
0
Ta=25 C
0
Ta=125 C
0
10
1
10
100
1000
0.1 1E-3
0.01
0.1
1
IC[mA], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Base-Emitter Saturation Voltage
1
100
IC=10IB
VCE(sat)[V], SATURATION VOLTAGE
IE = 0 f = 1MHz
Cob [pF], CAPACITANCE
Ta=125 C
0
10
0.1
Ta=25 C Ta=-25 C
0
0
1
0.01 1E-3
0.1
0.01
0.1
1
1
10
100
1000
IC[A], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Output Capacitance
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
FJZ945
Typical Characteristics (Continued)
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
VCE = 6V
100
10
1 0.1
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
FJZ945
Package Dimensions
SOT-623F
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. B1, July 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER
ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™
PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™
SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TruTranslation™ UHC™ UltraFET® VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2003 Fairchild Semiconductor Corporation
Rev. I3
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