FKN08PN60S

FKN08PN60S — TRIAC (Silicon Bidirectional Thyristor) February 2008 FKN08PN60S TRIAC (Silicon Bidirectional Thyristor) Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool 3 1: T1 2: Gate 3: T2 2 TO-92 123 1 Absolute Maximum Ratings Symbol VDRM VRRM IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM TJ TSTG Ta = 25°C unless otherwise noted Parameter Peak Repetitive Off-State Voltage RMS On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Value Sine Wave 50 to 60Hz, Gate Open Commercial frequency, sine full wave 360° conduction, Tc= 70℃ Sinewave half cycle, peak value, non-repetitive Value corresponding to halfwave, surge on-state current, tp=8.33ms 60Hz Rating 600 0.8 8 0.26 5 0.1 5 1 - 40 ~ 125 - 40 ~ 125 Units V A A A 2s W W V A °C °C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case (note1) (note2) Value 45 160 Units °C/W °C/W Thermal Resistance, Junction to Ambient Note1: Infinite cooling condition. Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad) © 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 1 www.fairchildsemi.com FKN08PN60S — TRIAC (Silicon Bidirectional Thyristor) Electrical Characteristics Symbol IDRM IRRM VTM TC = 25°C unless otherwise noted Parameter Repetieive Peak Off-State Current On-State Voltage I Test Condition VDRM/VRRM applied TC=25°C, ITM=1.12A Instantaneous measurement T2(+), Gate (+) VD=12V, RL=100Ω T2(+), Gate (-) T2(-), Gate (-) T2(+), Gate (+) VD=12V, RL=100Ω TJ=125°C, VD=1/2VDRM (I, II,III) I, III II VD = 12V, ITM = 200mA VD = 12V, IG = 10mA VDRM = 63% Rated, Tj = 125°C, Exponential Rise T2(+), Gate (-) T2(-), Gate (-) II III I Min. Typ. Max. Units 0.2 20 3.0 - 100 1.8 2.0 2.0 2.0 5 5 5 15 15 20 - μA V V V V mA mA mA V mA mA mA V/μs V/μs VGT Gate Trigger Voltage (Note 2) IGT VGD IH IL dv/dt(s) dv/dt(c) Gate Trigger Current (Note 2) Gate Non-Trigger Voltage Holding Current Latching Current Critical Rate of Rise of Off-State Voltag II III Critical-Rate of Rise of Off-State Commutating Voltage (di/dt=-0.7A/uS) Commutation dv/dt test VDRM (V) FKN08PN60S Test Condition 1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C 3. Peak off-state voltage VD = 300V Commutating voltage and current waveforms (inductive load) Supply Voltage (di/dt)C Main Current Time Time Main Voltage (dv/dt)C Time VD © 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 2 www.fairchildsemi.com FKN08PN60S — TRIAC (Silicon Bidirectional Thyristor) Quadrant Definitions for a Triac T2 Positive + (+) T2 (+) T2 Quadrant II (-) IGT GATE T1 (+) IGT GATE T1 Quadrant I IGT (-) T2 (-) T2 + IGT Quadrant III (-) IGT GATE T1 (+) IGT GATE T1 Quadrant IV T2 Negative Package Marking and Ordering Information Device Marking K08PN60S Device FKN08PN60S Package TO-92 Packing BULK Tape Width -- Quantity -- © 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 3 www.fairchildsemi.com FKN08PN60S — TRIAC (Silicon Bidirectional Thyristor) Typical Performance Characteristics Figure 1. On-State Characteristics Figure 2. Power Dissipation PAV[W], Maximum Average Power Dissipation 1.2 ITM[A], On-State Current 1.0 TJ=125 C 1 o TJ=25 C o 0.8 DC 0.6 180 120 o o 0.4 o 0.2 90 30 o 60 o 0.1 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 0.2 0.4 0.6 0.8 VTM[V], On-State Voltage ITRMS[A], On-State Current Figure 3. RMS Current Rating Maximum Allowable Case Temperature, TC[ C] Figure 4. Typical Gate Trigger Current vs Junction Temperature 6 o 120 30 o IGT[mA], Gate Trigger Current 60 o 90 110 o o o 5 Q3 4 100 120 Q2 3 180 90 DC Q1 2 80 1 70 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 -40 0 o 40 80 120 ITRMS[A], On-State Current T J[ C], Junction Temperature Figure5. Typical Gate Voltage vs Junction Temperarure 1.0 Figure6. Typical Latching Currrent vs Junction Temperature 6 VGT[mA], Gate Trigger Voltage 0.9 0.8 IL[mA], Latching Current 4 Q3 0.7 Q3 Q1 0.6 2 Q2 0.5 Q1 0.4 -40 0 o 40 80 120 0 -40 0 o 40 80 120 T J[ C], Junction Temperature T J [ C ], Junction Tem perature © 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 4 www.fairchildsemi.com FKN08PN60S — TRIAC (Silicon Bidirectional Thyristor) Typical Performance Characteristics (Continued) Figure7. Typical Holding Current vs Junction Temperature 5 Figure8. Junction to Case Thermal Resistance Q3 4 Junction to Case Thermal Resistance, [ C/W] 50 o 40 IH[mA],Holding Current 3 30 Q1 2 20 Q2 1 10 0 -40 0 o 40 80 120 0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 TJ[ C], Junction Temperature Time, [S] © 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 5 www.fairchildsemi.com FKN08PN60S — TRIAC (Silicon Bidirectional Thyristor) Package Dimension TO-92 4.58 –0.15 +0.25 14.47 ±0.40 0.46 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) © 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 6 (0.25) www.fairchildsemi.com FKN08PN60S FKN08PN60S TRIAC (Silicon Bidirectional Thyristor) TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation FKN08PN60S Rev. 1.0.0 7 www.fairchildsemi.com