FKPF12N80

FKPF12N80 FKPF12N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool 2 1: T1 2: T2 3: Gate 3 123 TO-220F 1 Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VDRM Parameter Repetitive Peak Off-State Voltage (Note1 ) Rating 800 Units V Symbol IT (RMS) ITSM I2t di/dt PGM PG (AV) VGM IGM TJ TSTG Viso Parameter RMS On-State Current Surge On-State Current I2t for Fusing Critical Rate of Rise of On-State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Isolation Voltage Conditions Commercial frequency, sine full wave 360° conduction, TC=82°C Sinewave 1 full cycle, peak value, non-repetitive 50Hz 60Hz Rating 12 120 132 72 50 5 0.5 10 2 - 40 ~ 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic Symbol Rth(J-C) Parameter Thermal Resistance Test Condition Junction to case (Note 4) Min. Typ. Max. 3.0 Units °C/W ©2004 Fairchild Semiconductor Corporation Rev. D2, April 2004 FKPF12N80 Electrical Characteristics TC=25°C unless otherwise noted Symbol IDRM VTM Parameter Repetieive Peak Off-State Current On-State Voltage I II III IGT VGD IH IL dv/dt (dv/dt)C Gate Trigger Current (Note 2) Gate Non-Trigger Voltage Holding Current Latching Current Critical Rate of Rise of Off-State Voltag Critical-Rate of Rise of Off-State Commutating Voltage (Note 3) I, III II VDRM = Rated, Tj = 125°C, Exponential Rise I II III TJ=125°C, VD=1/2VDRM VD = 12V, ITM = 1A VD = 12V, IG = 1.2IGT VD=12V, RL=20Ω VD=12V, RL=20Ω Test Condition VDRM applied TC=25°C, ITM=17A Instantaneous measurement T2(+), Gate (+) T2(+), Gate (-) T2(-), Gate (-) T2(+), Gate (+) T2(+), Gate (-) T2(-), Gate (-) Min. 0.2 10 Typ. 300 Max. 20 1.5 1.5 1.5 1.5 30 30 30 50 50 70 Units µA V V V V mA mA mA V mA mA mA V/µs V/µs VGT Gate Trigger Voltage (Note 2) Notes: 1. Gate Open 2. Measurement using the gate trigger characteristics measurement circuit 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below 4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W VDRM (V) Test Condition Commutating voltage and current waveforms (inductive load) FKPF12N80 1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C = - 6.5A/ms 3. Peak off-state voltage VD = 400V Supply Voltage (di/dt)C Main Current Time Time Main Voltage (dv/dt)C Time VD Quadrant Definitions for a Triac T2 Positive + (+) T2 (+) IGT GATE T1 IGT (+) T2 (+) T2 (+) IGT GATE T1 + IGT (+) T2 Quadrant II Quadrant I Quadrant III (+) IGT GATE T1 (+) IGT GATE T1 Quadrant IV T2 Negative ©2004 Fairchild Semiconductor Corporation Rev. D2, April 2004 FKPF12N80 Typical Curves 50 160 SURGE ON-STATE CURRENT [A] 40 140 ON-STATE CURRENT [A] 30 120 Tj=25℃ 20 60 Hz 100 Tj=125℃ 50 Hz 80 10 60 0 0.0 0.5 1.0 1.5 2.0 ON-STATE VOLTAGE [V] 40 1 10 100 NUMBER OF CYCLES AT 50Hz AND 60Hz Figure 1. Maximum On-state Characteristics Figure 2. Rated Surge On-state Current 100 NORMALIZED GATE TRIGGER CURRENT [%] 1000 TYPICAL EXAMPLE GATE VOLTAGE [V] VGM=10V 10 PG(AV)=0.5W VGT=1.5V PGM=5W IGM=2A IⅠ 100 IⅡ, IⅢ 1 0.1 10 IRGTⅠ IFGTⅠ, IRGTⅢ VGD=0.2V 100 1000 10000 10 -60 -40 -20 0 20 40 60 80 o 100 120 140 GATE CURRENT [mA] JUNCTION TEMPERATURE [ C] Figure 3. Gate Characteristics Figure 4. Gate Trigger Current vs Tj NORMALIZED GATE TRIGGER VOLTAGE [%] 1000 10 TRANSIENT THERMAL IMPEDANCE JUNCTION TO CASE 100 Rth(j-c) [ C/W] o 1 10 -60 -40 -20 0 20 40 60 80 o 100 120 140 0.1 1E-3 0.01 0.1 1 10 100 JUNCTION TEMPERATURE [ C] TIME [sec] Figure 5. Gate Trigger Voltage vs Tj Figure 6. Transient Thermal Impedance ©2004 Fairchild Semiconductor Corporation Rev. D2, April 2004 FKPF12N80 Typical Curves (Continues) 140 160 Maximum Allowable Ambient Temperature [℃] 120 CASE TEMPERATURE [℃] 100 ① NO HEAT SINK ② 30 × 30 × 2 ② AL HEAT SINK ③ 50 × 50 × 2 ② AL HEAT SINK ④ 70 × 70 × 2 ② AL HEAT SINK ⑤ 100 × 100 × 2 ② AL HEAT SINK 140 120 100 80 60 40 20 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 80 60 40 20 ① 0 0 2 ② 4 ③ 6 ④ 8 ⑤ 0 10 12 0 360° CONDUCTION RESISTIVE, INDUCTIVE LOAD 2 4 6 8 10 12 14 16 IT(RMS) [A] RMS ON-STATE CURRENT [A] Figure 7. Allowable Ambient Temperature vs Rms On-state Current Figure 8. Allowable Case Temperature vs Rms On-state Current 16 NORMALIZED REPETIVITE OFF-STATE CURRENT [%] 10 5 ON STATE POWER DISSIPATION [W] 14 12 10 8 6 4 2 0 360° CONDUCTION RESISTIVE, INDUCTIVE LOAD TYPICAL EXAMPLE 10 4 10 3 10 2 0 2 4 6 8 10 12 14 16 -60 -40 -20 0 20 40 60 80 o 100 120 140 RMS ON-STATE CURRENT [A] JUNCTION TEMPERATURE [ C] Figure 9. Maximum On-state Power Dissipation Figure 10. Repetitive Peak Off-state Current vs Junction Temperature 1000 1000 NORMALIZED HOLDING CURRENT [%] NORMALIZED LATCHING CURRENT [%] TYPICAL EXAMPLE 100 T2(+), G(-) TYPICAL EXEMPLE 100 10 T2(± ), G(+) TYPICAL EXEMPLE 10 -60 -40 -20 0 20 40 60 80 o 100 120 140 1 -60 -40 -20 0 20 40 60 80 o 100 120 140 JUNCTION TEMPERATURE [ C] JUNCTION TEMPERATURE [ C] Figure 11. Holding Current vs Junction Temperature Figure 12. Laching Current vs Junction Temperature ©2004 Fairchild Semiconductor Corporation Rev. D2, April 2004 FKPF12N80 Typical Curves (Continues) 160 1000 NORMALIZED BREAKOVER VOLTAGE [%] 140 120 100 80 60 40 20 0 -60 NORMALIZED GATE TRIGGER CURRENT [%] TYPICAL EXAMPLE IⅡ IⅢ 100 IⅠ -40 -20 0 20 40 60 80 o 100 120 140 10 1 10 100 JUNCTION TEMPERATURE [ C] GATE CURRENT PULSE WIDTH [µs] Figure 13. Breakover Voltage vs. Junction Temperature Figure 14. Gate Trigger Current vs. Gate Current Pulse Width 160 NORMALIZED BREAKOVER VOLTAGE [%] 120 100 80 60 40 20 Ⅰ QUADRANT CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE [V/us] 140 TYPICAL EXAMPLE Tj=125℃ 100 TYPICAL EXAMPLE Tj = 125℃ IT = 4A τ = 500us VD = 200V f = 3Hz Ⅰ QUADRANT 10 Ⅲ QUADRANT Ⅲ QUADRANT 1 10 1 10 2 10 3 10 4 10 0 10 1 10 2 10 3 RATE OF RISE OF-STATE VOLTAGE [V/us] RATE OF DECAY OF ON-STATE COMMUTATION CURRENT [A/ms] Figure 15. Breakover Voltage vs. Rate of Rise of Off-State Voltage Figure 16. Commutation Characteristics ©2004 Fairchild Semiconductor Corporation Rev. D2, April 2004 FKPF12N80 Package Dimension TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. D2, April 2004 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ FACT™ i-Lo™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ PACMAN™ POP™ ISOPLANAR™ Power247™ LittleFET™ MICROCOUPLER™ PowerSaver™ PowerTrench MicroFET™ QFET MicroPak™ QS™ MICROWIRE™ QT Optoelectronics™ MSX™ Quiet Series™ MSXPro™ RapidConfigure™ OCX™ RapidConnect™ OCXPro™ SILENT SWITCHER OPTOLOGIC SMART START™ OPTOPLANAR™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I10