FM2G200US60
IGBT
FM2G200US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features
• • • • • • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High cpeed cwitching Low caturation voltage : VCE(sat) = 2.2 V @ IC = 200A High input impedance Fast and soft anti-parallel FWD
Package Code : 7PM-BB
E1/C2
Application
• • • • • AC & DC motor controls General purpose inverters Robotics Servo controls UPS
C1 E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque
TC = 25°C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw: M5 Mounting Screw: M6
@ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ TC = 25°C
@ AC 1minute
FM2G200US60 600 ± 20 200 400 200 400 10 830 -40 to +150 -40 to +125 2500 2.0 2.5
Units V V A A A A us W °C °C V N.m N.m
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
©2002 Fairchild Semiconductor Corporation
FM2G200US60 Rev. A1
FM2G200US60
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 0V, IC= 200mA IC = 200A, VGE = 15V 5.0 --2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---14600 2170 500 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---120 75 200 90 3.6 8.7 12.3 220 100 290 210 4.8 11.8 16.6 -820 170 365 --250 200 -----------900 --ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC
VCC = 300 V, IC = 200A, RG = 1.8Ω, VGE = 15V Inductive Load, TC = 25°C
VCC = 300 V, IC = 200A, RG = 1.8Ω, VGE = 15V Inductive Load, TC = 125°C
@ TC =
VCC = 300 V, VGE = 15V 100°C
VCE = 300 V, IC = 200A, VGE = 15V
©2002 Fairchild Semiconductor Corporation
FM2G200US60 Rev. A1
FM2G200US60
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
Test Conditions T C = 2 5° C IF = 200A TC = 100°C T C = 2 5° C TC = 100°C IF = 200A di / dt = 400 A/us T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C
Min. ---------
Typ. 1.9 1.8 90 130 19 25 855 1625
Max. 2.8 -130 -25 -1600 --
Units V ns A nC
Thermal Characteristics
Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.03 -Max. 0.15 0.35 -270 Units °C/W °C/W °C/W g
©2002 Fairchild Semiconductor Corporation
FM2G200US60 Rev. A1
FM2G200US60
400 350 300 Common Emitter TC = 2 5 ℃
400 20V 15V 12V 350 Common Emitter VGE = 15V T C = 2 5℃ TC = 125℃
Collector Current, I C [A]
8
Collector Current, IC [A]
300 250 200 150 100 50 0
V GE = 1 0V 250 200 150 100 50 0 0 2 4 6
0.3
1
10
20
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
240 Common Emitter V GE = 1 5V 210 180
V CC = 3 00V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]
4
Load Current [A]
400A 3 200A 2 IC = 1 00A
150 120 90 60
1 30 0 0 30 60 90 120 150 0 Duty cycle : 50% TC = 1 00 ℃ Power Dissipation = 250W 0.1 1 10 100 1000
Case Temperature, TC [℃ ]
Frequency [Khz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25 ℃ 16
20 Common Emitter T C = 1 25 ℃
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, VCE [V]
16
12
12
8
8
400A 4 IC = 100A 0 0 4 8 12 16 20 200A
400A 4 IC = 1 00A 0 0 4 8 12 16 20 200A
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FM2G200US60 Rev. A1
FM2G200US60
40000 35000 30000 Cies
1000 Common Emitter VGE = 0V, f = 1MHz T C = 25 ℃
Capacitance [pF]
Common Emitter VCC = 300V, VGE = ± 15V IC = 200A T C = 2 5℃ TC = 125℃
Ton
25000 20000 15000 10000 5000 0 0.5 Cres
Coes
Switching Time [ns]
Tr
100
50 1 10 30 1 10 50
Collector - Emitter Voltage, VCE [V]
Gate Resistance, R G [Ω ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
3000
100000 Common Emitter V CC = 300V, V GE = ± 15V IC = 200A T C = 25 ℃ TC = 125 ℃ Common Emitter VCC = 300V, V GE = ± 15V IC = 200A T C = 2 5℃ TC = 125℃
Toff
Switching Time [ns]
1000
Switching Loss [uJ]
10000 Eoff
Tf
Eon
100
Tf
50 1 10 50
1000 1
10
50
Gate Resistance, R G [Ω ]
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Switching Time [ns]
Ton 100 Tr
Switching Time [ns]
Common Emitter V CC = 300V, VGE = ± 15V RG = 1.8Ω T C = 25℃ T C = 125 ℃
1000
Common Emitter V CC = 3 00V, V GE = ± 15V RG = 1 .8 Ω T C = 25 ℃ TC = 1 25 ℃
Toff
Tf 100
10 30 40 60 80 100 120 140 160 180 200
50 30 40 60 80 100 120 140 160 180 200
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
FM2G200US60 Rev. A1
FM2G200US60
30000
15 Common Emitter R L = 1 .5 Ω T C = 2 5℃ 3 00 V
10000
Eoff
Gate - Emitter Voltage, V G E [ V ]
12
Switching Loss [uJ]
Eon
9 2 00 V V CC = 1 00 V
1000 Common Emitter V CC = 3 00V, VGE = ± 15V RG = 1 .8 Ω T C = 2 5℃ T C = 1 25℃ 30 40 60 80 100 120 140 160 180 200
6
3
100
0 0 100 200 300 400 500 600 700 800 900
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
1000 IC M AX. (Pulsed) IC M AX. (Continuous) 50us 100us 100 1㎳
1000
Collector Current, IC [A]
Collector Current, IC [A]
100
DC Operation
10 Single Nonrepetitive Pulse TC = 25 ℃ Curves must be derated linerarly with increase in temperature 1 0.3 1 10 100 1000
10
Safe Operating Area V GE = 20V, T C = 100 C 1 1 10 100 1000
o
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1000
1
Thermal Response, Zthjc [℃/W]
Collector Current, I C [A]
100
0.1
0.01
10 Single Nonrepetitive Pulse T J ≤ 125 ℃ V GE = 1 5V RG = 1 .8 Ω 0 100 200 300 400 500 600 700
1E-3
1
T C=25℃ IGBT : DIODE : 10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, V CE [V]
Rectangular Pulse Duration [sec]
Fig 17. RBSOA Characteristics
©2002 Fairchild Semiconductor Corporation
Fig 18. Transient Thermal Impedance
FM2G200US60 Rev. A1
FM2G200US60
500
50
400
Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns]
Common Cathode V GE = 0 V T C = 25 ℃ T C = 1 25 ℃
Common Cathode di/dt = 400A/㎲ T C = 2 5℃ T C = 100℃
Forward Current, I F [A]
300
Irr
200
T rr 10
100
0 0 1 2 3 4
5 0 40 80 120 160 200
Forward Voltage, V F [V]
Forward Current, IF [A]
Fig 19. Forward Characteristics
Fig 20. Reverse Recovery Characteristics
©2002 Fairchild Semiconductor Corporation
FM2G200US60 Rev. A1
FM2G200US60
Package Dimension
7PM-BB (FS PKG CODE BE)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation FM2G200US60 Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™
FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™
MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™
SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™
UHC™ UltraFET® VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. H5