FMBL1G200US60

FMBL1G200US60 July 2001 IGBT FMBL1G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 200A High input impedance Fast & soft anti-parallel FWD Package Code : 7PM-BB E1/C2 Application C1 E2 • Boost (Step Up) Converter G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M6 @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FMBL1G200US60 600 ± 20 200 400 200 400 10 830 -40 to +150 -40 to +125 2500 2.0 2.5 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 Electrical Characteristics of IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 0V, IC= 200mA IC = 200A, VGE = 15V 5.0 --2.2 8.5 2.8 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---14600 2170 500 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---120 75 200 90 3.6 8.7 12.3 220 100 290 210 4.8 11.8 16.6 -820 170 365 --250 200 -----------900 --ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC VCC = 300 V, IC = 200A, RG = 1.8Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 200A, RG = 1.8Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 200A, VGE = 15V ©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C = 25°C unless otherwise noted Test Conditions T C = 2 5° C IF = 200A TC = 100°C T C = 2 5° C TC = 100°C IF = 200A di / dt = 400 A/us T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C Min. --------- Typ. 1.9 1.8 90 130 19 25 855 1625 Max. 2.8 -130 -25 -1600 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.03 -Max. 0.15 0.35 -270 Units °C/W °C/W °C/W g ©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 400 350 300 Common Emitter TC = 2 5 ℃ 400 20V 15V 12V 350 Common Emitter VGE = 15V T C = 2 5℃ TC = 125℃ Collector Current, I C [A] 8 Collector Current, IC [A] 300 250 200 150 100 50 0 V GE = 1 0V 250 200 150 100 50 0 0 2 4 6 0.3 1 10 20 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 240 Common Emitter V GE = 1 5V 210 180 V CC = 3 00V Load Current : peak of square wave Collector - Emitter Voltage, VCE [V] 4 Load Current [A] 400A 3 200A 2 IC = 1 00A 150 120 90 60 1 30 0 0 30 60 90 120 150 0 Duty cycle : 50% TC = 1 00 ℃ Power Dissipation = 250W 0.1 1 10 100 1000 Case Temperature, TC [℃ ] Frequency [Khz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25 ℃ 16 20 Common Emitter T C = 1 25 ℃ Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, VCE [V] 16 12 12 8 8 400A 4 IC = 100A 0 0 4 8 12 16 20 200A 400A 4 IC = 1 00A 0 0 4 8 12 16 20 200A Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FMBL1G200US60 Rev. A FMBL1G200US60 40000 35000 30000 Cies 1000 Common Emitter VGE = 0V, f = 1MHz T C = 25 ℃ Capacitance [pF] Common Emitter VCC = 300V, VGE = ± 15V IC = 200A T C = 2 5℃ TC = 125℃ Ton 25000 20000 15000 10000 5000 0 0.5 Cres Coes Switching Time [ns] Tr 100 50 1 10 30 1 10 50 Collector - Emitter Voltage, VCE [V] Gate Resistance, R G [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 3000 100000 Common Emitter V CC = 300V, V GE = ± 15V IC = 200A T C = 25 ℃ TC = 125 ℃ Common Emitter VCC = 300V, V GE = ± 15V IC = 200A T C = 2 5℃ TC = 125℃ Toff Switching Time [ns] 1000 Switching Loss [uJ] 10000 Eoff Tf Eon 100 Tf 50 1 10 50 1000 1 10 50 Gate Resistance, R G [Ω ] Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Switching Time [ns] Ton 100 Tr Switching Time [ns] Common Emitter V CC = 300V, VGE = ± 15V RG = 1.8Ω T C = 25℃ T C = 125 ℃ 1000 Common Emitter V CC = 3 00V, V GE = ± 15V RG = 1 .8 Ω T C = 25 ℃ TC = 1 25 ℃ Toff Tf 100 10 30 40 60 80 100 120 140 160 180 200 50 30 40 60 80 100 120 140 160 180 200 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2001 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current FMBL1G200US60 Rev. A FMBL1G200US60 30000 15 Common Emitter R L = 1 .5 Ω T C = 2 5℃ 3 00 V 10000 Eoff Gate - Emitter Voltage, V G E [ V ] 12 Switching Loss [uJ] Eon 9 2 00 V V CC = 1 00 V 1000 Common Emitter V CC = 3 00V, VGE = ± 15V RG = 1 .8 Ω T C = 2 5℃ T C = 1 25℃ 30 40 60 80 100 120 140 160 180 200 6 3 100 0 0 100 200 300 400 500 600 700 800 900 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 1000 IC M AX. (Pulsed) IC M AX. (Continuous) 50us 100us 100 1㎳ 1000 Collector Current, IC [A] Collector Current, IC [A] 100 DC Operation 10 Single Nonrepetitive Pulse TC = 25 ℃ Curves must be derated linerarly with increase in temperature 1 0.3 1 10 100 1000 10 Safe Operating Area V GE = 20V, T C = 100 C 1 1 10 100 1000 o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 1000 1 Thermal Response, Zthjc [℃/W] Collector Current, I C [A] 100 0.1 0.01 10 Single Nonrepetitive Pulse T J ≤ 125 ℃ V GE = 1 5V RG = 1 .8 Ω 0 100 200 300 400 500 600 700 1E-3 1 T C=25℃ IGBT : DIODE : 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Collector-Emitter Voltage, V CE [V] Rectangular Pulse Duration [sec] Fig 17. RBSOA Characteristics ©2001 Fairchild Semiconductor Corporation Fig 18. Transient Thermal Impedance FMBL1G200US60 Rev. A FMBL1G200US60 500 50 400 Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns] Common Cathode V GE = 0 V T C = 25 ℃ T C = 1 25 ℃ Common Cathode di/dt = 400A/㎲ T C = 2 5℃ T C = 100℃ Forward Current, I F [A] 300 Irr 200 T rr 10 100 0 0 1 2 3 4 5 0 40 80 120 160 200 Forward Voltage, V F [V] Forward Current, IF [A] Fig 19. Forward Characteristics Fig 20. Reverse Recovery Characteristics ©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 Package Dimension 7PM-BB (FS PKG CODE BE) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H3