FMBSA56

FMBSA56 FMBSA56 PNP General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 73. C1 E NC B C pin #1 C SuperSOTTM-6 single Mark: .2G1 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -80 -80 -4.0 -500 - 55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO hFE VCE(sat) VBE(on) fT Parameter Test Condition IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCE = -60V, IB = 0 VCB = -80V, IE = 0 IC = -10mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -100mA, IB = -10mA IC = -100mA, VCE = -1.0V IC = -10mA, VCE = -2.0V, f = 100MHz 50 100 100 -0.25 -1.2 V V MHz Min. -80 -80 -4.0 -0.1 -0.1 V µA µA Max. Units V Collector-Emitter Sustaining Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product On Characteristics Small Signal Characteristics * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation * Thermal Resistance, Junction to Ambient, total Max. 700 180 Units mW °C/W * Device mounted on a 1 in 2 pad of 2 oz copper. ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 FMBSA56 Typical Characteristics TYP ICAL PULSED CURRE NT GAIN vs Collector Current 300 250 200 150 25 °C 125 °C V CESAT - COLLECTOR EMITTE R VOLTAGE (V) Voltage vs Collector Current 0.8 VCE = 1V β β = 10 0.6 0.4 25 °C 100 50 - 40 °C 0.2 - 40 °C 125 °C FE - h 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 0 10 100 I C - COLLECTOR CURRE NT (mA) Figure 1. Typical Pulsed Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) Voltage vs Collector Current 1.2 Collect or Current 1.2 V CE = 1V 1 - 40 °C β β = 10 β - 40 °C 1 0.8 0.6 0.4 0.2 0 0.1 25 °C 125 °C 0.8 β 25 °C 125 °C 0.6 0.4 10 100 I C - COLLECTOR CURRE NT (mA) 1000 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs Collector Current I CBO - COLLECTOR CURRENT (nA) 10 V CB = 60V 100 f = 1.0 MHz 1 CAPACITANCE (pF) C ib 0.1 0.01 Cob 0.001 25 50 75 100 T A - AMBIENT TEMPERATURE (º C) 125 0.1 1 10 100 V CE - COLLECTOR VOLTAGE (V) Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6. Collector Saturation Region ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 FMBSA56 Typical Characteristics (Continued) 10 f T - GAIN BANDWIDTH PRODUCT (MHz) V CE - COLLECTOR-EMITTER VOLTAGE (V) Collector Saturation Region vs Collector Current 350 300 250 200 150 100 50 0 1 10 100 VCE = 5V 8 T A = 25° C 6 IC = 4 1 mA 10 mA 100 mA 2 0 3000 5000 10000 20000 30000 50000 I B - BASE CURRENT (uA) IC - COLLECTOR CURRENT (mA) Figure 7. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Figure 8. Input and Output Capacitance vs Reverse Voltage ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 FMBSA56 Package Dimensions SuperSOTTM-6 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I13