FMC6G50US60

FMC6G50US60 June 2001 IGBT FMC6G50US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 50A High input impedance Built in 3 phase rectifier circuit Fast & soft anti-parallel FWD R EU S U V W T EV EW Package Code : 21PM-BA P P1 GU GV GW Applications • • • • AC & DC motor controls General purpose inverters Robotics Servo controls GU N B GV GW E Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM I2t TJ Common TSTG VISO Mounting Torque TC = 25°C unless otherwise noted Inverter Converter Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25°C Pulsed Collector Current Diode Continuous Forward Current @ TC = 100°C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C Short Circuit Withstand Time @ TC = 100°C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 1 Cycle Surge Current Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw @ AC 1minute @ M4 FMC7G50US60 600 ± 20 50 100 50 100 200 10 1200 50 500 1025 -40 to +150 -40 to +125 2500 1.25 Units V V A A A A W us V A A A2s °C °C V N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation FMC6G50US60 Rev. A3 FMC6G50US60 Electrical Characteristics of the IGBT @ Inverter T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 0V, IC = 50mA IC = 50A, VGE = 15V 5.0 -6.0 2.2 8.5 2.8 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---3460 480 140 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---32 67 66 118 1.8 1.0 2.8 33 68 68 261 2.41 2.31 4.72 -145 28 65 --100 200 --3.8 --110 400 --6.65 -210 40 95 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 50A, VGE = 15V ©2001 Fairchild Semiconductor Corporation FMC6G50US60 Rev. A3 FMC6G50US60 Electrical Characteristics of the DIODE @ Inverter Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF= 50A di / dt = 100 A/us TC = 25°C unless otherwise noted Test Conditions T C = 2 5° C IF = 50A TC = 100°C T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C Min. --------- Typ. 1.9 1.8 90 130 5 7 225 455 Max. 2.8 -130 -6.5 -422 -- Units V ns A nC Electrical Characteristics of the DIODE @ Converter T Symbol VFM IRRM Parameter Diode Forward Voltage Repetitive Reverse Current C = 25°C unless otherwise noted Test Conditions T C = 2 5° C IF = 50A TC = 100°C VR = VRRM T C = 2 5° C TC = 100°C Min. ----- Typ. 1.1 1.0 -5 Max. 1.5 -8 -- Units V mA Thermal Characteristics Inverter Converter Weight Symbol RθJC RθJC RθJC Parameter Junction-to-Case (IGBT Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Weight of Module Typ. ---270 Max. 0.625 1.6 1.5 -Units °C/W °C/W °C/W g ©2001 Fairchild Semiconductor Corporation FMC6G50US60 Rev. A3 FMC6G50US60 140 120 Common Emitter T C = 2 5℃ 20V 15V 140 120 12V Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ Collector Current, IC [A] Collector Current, I C [A] 8 100 80 60 40 20 0 100 80 60 40 20 0 0 2 4 6 VGE = 10V 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [ V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 60 Common Emitter V GE = 1 5V Collector - Emitter Voltage, VC E [V] VCC = 3 00V Load Current : peak of square wave 4 50 100A Load Current [A] 40 3 50A 2 IC = 3 0A 30 20 1 10 0 -50 0 50 100 150 0 Duty cycle : 50% TC = 1 00℃ Power Dissipation = 70W 1 10 100 1000 Case Temperature, T C [ ℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 2 5℃ 16 20 Common Emitter TC = 125 ℃ 16 Collector - Emitter Voltage, V C E [V] Collector - Emitter Voltage, V CE [V] 12 12 8 8 100A 4 IC = 30A 0 50A 4 IC = 3 0A 0 0 4 8 100A 50A 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FMC6G50US60 Rev. A3 FMC6G50US60 7000 Common Emitter V GE = 0V, f = 1MHz T C = 25 ℃ 1000 Common Emitter V CC = 300V, V GE = ± 15V IC = 50A T C = 2 5℃ ━━ T C = 125℃ ------ 6000 Capacitance [pF] Cies 4000 Switching Time [ns] 5000 Ton Tr 3000 Coes 2000 Cres 1000 100 0 1 10 10 100 Collector - Emitter Voltage, V CE [V] Gate Resistance, RG [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Time [ns] Toff Switching Loss [uJ] Common Emitter V CC = 300V, V GE = ± 15V IC = 50A T C = 2 5 ℃ ━━ T C = 125 ℃ - ----- 10000 Common Emitter VCC = 300V, V GE = ± 15V IC = 50A TC = 2 5℃ ━━ TC = 125℃ ------ Toff Eon Eoff Tf Eoff 1000 Tf 100 10 100 10 100 Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter V GE = ± 15V, RG = 5.9Ω T C = 2 5 ℃ ━━ T C = 125 ℃ - ----- 1000 Switching Time [ns] Switching Time [ns] Ton Tr Toff Tf Toff 100 Tf Common Emitter VGE = ± 15V, RG = 5.9 Ω TC = 2 5℃ ━━ TC = 125℃ ------ 100 10 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2001 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current FMC6G50US60 Rev. A3 FMC6G50US60 20000 10000 Common Emitter V CC = 3 00V, V GE = ± 15V RG = 5 .9 Ω T C = 2 5℃ TC = 1 25℃ 15 Common Emitter R L = 5.9 Ω T C = 25℃ Gate - Emitter Voltage, VGE [ V ] Eon 12 VCC = 100 V 300 V Switching Loss [uJ] Eoff 9 200 V 1000 6 3 100 20 40 60 80 100 0 0 40 80 120 160 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 300 100 IC M AX. (Pulsed) IC M AX. (Continuous) 50us 100us 1㎳ 10 DC Operation 300 100 Collector Current, I C [A] Collector Current, I C [A] 10 1 Single Nonrepetitive Pulse T C = 2 5℃ Curves must be derated linerarly with increase in temperature 0.3 1 10 100 1000 Safe Operating Area V GE = 2 0V, T C = 1 00 C 1 1 10 100 1000 o 0.1 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 300 100 5 Thermal Response, Zthjc [℃/W] 1 Collector Current, I C [A] 10 0.1 1 Single Nonrepetitive Pulse T J ≤ 1 25 ℃ V GE = 15V RG = 5 .9 Ω 0 100 200 300 400 500 600 700 0.01 0.1 1E-3 10 -5 IGBT : DIODE : 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Collector-Emitter Voltage, V CE [V] Rectangular Pulse Duration [sec] Fig 17. RBSOA Characteristics ©2001 Fairchild Semiconductor Corporation Fig 18. Transient Thermal Impedance FMC6G50US60 Rev. A3 FMC6G50US60 160 20 [A] 120 Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, T rr [x10ns] Common Cathode V GE = 0V T C = 25℃ T C = 125 ℃ 10 Trr Forward Current, I F 80 Irr 5 40 Common Cathode di/dt = 100A/us T C = 25 ℃ T C = 1 00 ℃ 2 0 10 20 30 40 50 0 0 1 2 3 4 Forward Voltage, V F [V] Forward Current, IF [A] Fig 19. Forward Characteristics Fig 20. Reverse Recovery Characteristics ©2001 Fairchild Semiconductor Corporation FMC6G50US60 Rev. A3 FMC6G50US60 Package Dimension 21PM-BA (FS PKG CODE BK) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation FMC6G50US60 Rev. A3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H3