FMM7G30US60N

FMM7G30US60N IGBT FMM7G30US60N Compact & Complex Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control and general inverters where short-circuit ruggedness is required. Features • • • • • • • • Short Circuit rated Time ; 10us @ TC =100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 30A High Input Impedance Built in Brake & 3 Phase Rectifier Circuit Fast & Soft Anti-Parallel FWD Built-in NTC Thermistor UL Certified No. E209204 R S T Package Code : 24PM-AA P P+ GV GW GU B EU EV U EW V W Application • • • • AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls GB -GU -GV -GW N N- E NTC T1 T2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM I2t TJ Common TSTG VISO Mounting Torque TC = 25°C unless otherwise noted Inverter & Brake Converter Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ T C = 8 0° C Pulsed Collector Current Diode Continuous Forward Current @ T C = 8 0° C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C Short Circuit Withstand Time @ TC = 100°C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive Energy pulse @ 1Cycle at 60Hz Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw @ AC 1minute @ M4 FMM7G30US60N 600 ± 20 30 60 30 60 104 10 1600 30 300 369 -40 to +150 -40 to +125 2500 4.0 Units V V A A A A W us V A A A2s °C °C V N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A FMM7G30US60N Electrical Characteristics of IGBT @ Inverter & Brake T Symbol Parameter Test Conditions C = 25°C unless otherwise noted Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 30mA, VCE = VGE IC = 30A, VGE = 15V 5.0 -6.5 2.1 8.5 2.7 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2100 270 36 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, IC = 30A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 25°C ------------10 ---110 90 150 130 0.9 0.58 100 90 150 200 0.98 0.9 -90 20 35 150 200 200 250 --150 200 200 400 ---150 40 70 ns ns ns ns mJ mJ ns ns ns ns mJ mJ us nC nC nC VCC = 300 V, IC = 30A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 300 V, VGE = 15V 100°C @ TC = VCE = 300 V, IC = 30A, VGE = 15V ©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A FMM7G30US60N Electrical Characteristics of DIODE @ Inverter & Brake T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 30A di / dt = 60 A/us C = 25°C unless otherwise noted Test Conditions T C = 2 5° C IF = 30A TC = 100°C T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C Min. --------- Typ. 2.0 2.0 90 130 2.2 3.4 400 880 Max. 2.8 -180 -3.4 -600 -- Units V ns A nC Electrical Characteristics of DIODE @ Converter T Symbol VFM IRRM Parameter Diode Forward Voltage Repetitive Reverse Current C = 25°C unless otherwise noted Test Conditions T C = 2 5° C IF = 30A TC = 100°C VR = VRRM T C = 2 5° C TC = 100°C Min. ----- Typ. 1.1 1.0 -5 Max. 1.5 -8 -- Units V mA Thermal Characteristics Inverter Brake Converter Weight Symbol RθJC RθJC RθJC RθJC RθJC Junction-to-Case Junction-to-Case Junction-to-Case Junction-to-Case Junction-to-Case Weight of Module Parameter (IGBT Part, per 1/6 Module) (DIODE Part, per 1/6 Module) (IGBT Part) (DIODE Part) (DIODE Part, per 1/6 Module) Typ. -----210 Max. 1.2 1.5 1.2 1.5 1.3 -Units °C/W °C/W °C/W °C/W °C/W g NTC Thermistor Characteristics Thermistor Symbol R25 R100 B(25/100) Parameter Rated Resistance @ Tc = 25°C Rated Resistance @ Tc = 100 °C B - Value Tol. +/- 5 % +/- 5 % +/- 3 % Typ. 5.0 0.415 3692 Units KΩ KΩ ©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A FMM7G30US60N 120 100 Common Emitter VGE = 15 V TC = 25℃ ━━ TC = 125℃ ------ 100 Common Emitter 14V 12V 15V 16V 18V 20V VGE = 10V TC = 25 C o 80 C [A] C o ll e c t o r C u r r e n t , I C o ll e c t o r C u r r e n t , I 80 60 40 20 0 C [A] 60 40 20 0 1 10 C E (s a t) 0 1 2 3 4 5 C E (s a t) 6 C o ll e c t o r - E m it t e r V o lt a g e , V [V] C o ll e c t o r - E m it t e r V o lt a g e , V [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4.0 100 [V] Common Emitter 14V 15V 16V 12V C o ll e c t o r - E m it t e r V o lt a g e , V C C E (s a t) [A] 80 TC = 125 C o 3.5 3.0 2.5 2.0 1.5 1.0 -50 Common Emitter VGE = 15 V C o ll e c t o r C u r r e n t , I 60 18V 20V VGE = 10V 60 A 40 30 A 20 15 A 0 0 1 2 3 4 C E (s a t) 5 6 C o ll e c t o r - E m it t e r V o lt a g e , V [V] 0 50 C 100 150 C ase T e m p erature, T [oC ] Fig 3. Typical Saturation Voltage Characteristics Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level 5000 5 Cie s Thermal Response, Zthjc [℃/W] 4000 T 1 V C o m m o n E m itt e r = 0 V, f = 1 M H z GE C = 25 o C C a p a c it a n c e [ p F ] 3000 Coes 0.1 2000 Cres 1000 0.01 0.005 10 -5 IGBT : DIODE : 0 0 10 -4 10 -3 10 -2 10 -1 10 10 1 0.1 1 10 CE C o ll e c t o r - E m it t e r V o lt a g e , V [V] Rectangular Pulse Duration [sec] Fig 5. Transient Thermal Impedance ©2003 Fairchild Semiconductor Corporation Fig 6. Capacitance Characteristics FMM7G30US60N Rev. A FMM7G30US60N 1000 S w it c h i n g T i m e [ n s ] S w it c h i n g T i m e [ n s ] Common Emitter VCC = 300V, VGE = ± 15V IC = 30A TC = 25℃ ━━ TC = 125℃ ------ 1000 Common Emitter VCC = 300V, VGE = ± 15V IC = 30A TC = 25℃ ━━ TC = 125℃ ------ T o ff Ton Tr 100 Tf 100 20 40 60 80 100 20 40 60 80 100 G ate R e sista n c e, R g [ Ω ] G ate R e sista n c e, R g [ Ω ] Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance 10000 S w it c h i n g L o s s [ u J ] Eon 1000 E o ff S w it c h i n g T i m e [ n s ] Common Emitter VCC = 300V, VGE = ± 15V IC = 30A TC = 25℃ ━━ TC = 125℃ ------ 1000 Common Emitter VGE = ± 15V, RG = 15Ω TC = 25℃ ━━ TC = 125℃ ------ Ton Tr 100 100 20 40 60 80 100 20 30 40 C 50 60 G ate R e sista n c e, R g [ Ω ] C o ll e c t o r C u r r e n t , I [A] Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current 1000 S w it c h i n g T i m e [ n s ] T o ff S w it c h i n g L o s s [ u J ] Common Emitter VGE = ± 15V, RG = 15Ω T C = 25℃ ━━ T C = 125℃ ------ 10000 Common Emitter VGE = ± 15V, RG = 15Ω TC = 25℃ ━━ TC = 125℃ ------ Eon 1000 E o ff Tf 100 100 20 30 40 C 50 60 20 30 40 C 50 60 C o ll e c t o r C u r r e n t , I [A] C o ll e c t o r C u r r e n t , I [A] Fig 11. Turn-Off Characteristics vs. Collector Current ©2003 Fairchild Semiconductor Corporation Fig 12. Switching Loss vs. Collector Current FMM7G30US60N Rev. A FMM7G30US60N 15 R C o m m o n E m itt e r = 10 L 100 [V] 12 T = 25 C Ω o V CC = 100 V 200 V 300 V C GE G a t e - E m itt e r V o lt a g e , V Collector Current, I C [A] 9 10 6 3 1 Single Nonrepetitive Pulse TJ ≤ 125℃ V GE = 1 5V RG = 15 Ω 0 100 200 300 400 500 600 700 0 0 20 40 60 g 80 100 0.1 G ate C harg e, Q [nC] Collector-Emitter Voltage, V CE [V] Fig 13. Gate Charge Characteristics Fig 14. RBSOA Characteristics 90 80 70 20 Peak Reverse Recovery Current, Ir r [A] Reverse Recovery Time, Tr r [x10ns] Common Cathode V GE = 0 V T C = 25 ℃ T C = 1 25 ℃ 10 T rr [A] Forward Current, I F 60 50 40 30 20 10 0 0 1 2 3 4 Irr 1 Common Cathode di/dt = 60A/us T C = 2 5℃ TC = 100℃ 5 10 15 20 25 30 0.5 Forward Voltage, V F [V] Forward Current, IF [A] Fig 15. Forward Characteristics Fig 16. Reverse Recovery Characteristics 1000 100 100 IF, Instantaneous Forward Current [A] TC =125℃ 25℃ I R, Reverse Current [uA] 10 1 0.1 0.0 1 TC = 125℃ 10 25℃ 1 1E-3 0 400 800 1200 1600 0.1 0.4 0.6 0.8 1.0 1.2 1.4 VF, Forward Voltage [V] VR, Reverse Voltage [V] Fig 17. Rectifier( Converter ) Characteristics ©2003 Fairchild Semiconductor Corporation Fig 18. Rectifier( Converter ) Characteristics FMM7G30US60N Rev. A FMM7G30US60N 3800 3750 10 3700 ] B 2 5/X C o n sta nt 1 -25 0 25 50 75 100 125 Ω R e sista n c e, R [ K 3650 3600 3550 3500 3450 3400 -25 0 25 50 75 100 T e m p erature, T [oC ] T e m p erature [oC ] Fig 19. NTC Characteristics Fig 20. NTC Characteristics ©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A FMM7G30US60N Package Dimension 24PM-AA -. Pin Coordinate Pin #No 1 Coordinate x 0.0 -11.43 -22.86 -34.29 -45.72 -57.15 -66.27 -66.27 -66.27 -66.27 -41.91 -38.10 -30.48 -26.67 -19.05 -15.24 -7.62 -3.81 0.0 3.81 7.62 12.93 12.93 12.93 y 0.0 0.0 0.0 0.0 0.0 0.0 5.71 13.33 28.57 36.19 41.90 41.90 41.90 41.90 41.90 41.90 41.90 41.90 41.90 41.90 41.90 32.38 28.57 13.33 107.0 ±0.80 4- Ø6.0 4- Ø2.0 ±0.10 Dp 2 3 4.5 10 93.0 ±0.30 2- Ø5.5 ±0.30 Mounting-Hole 21 4 5 6 7 8 45.0 ±0.80 41.9 ±0.30 35.0 ±0.30 Name Plate 6 1 20.95±0.20 9 10 11 12 13 26.67±0.20 1.15 ±0.20 * 0.8t 14 15 16 32.0±1.00 17 18 19 15.3±0.50 16.8±0.50 7.1 42.7±0.50 20 21 22 23 24 • datum pin : #1 • Pin Tilt : ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation FMM7G30US60N Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2003 Fairchild Semiconductor Corporation Rev. I2