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FOD814300

FOD814300

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    FOD814300 - 4-Pin High Operating Temperature Phototransistor Optocouplers - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
FOD814300 数据手册
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers May 2006 FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features ■ AC input response (FOD814 only) ■ Applicable to Pb-free IR reflow soldering ■ Compact 4-pin package ■ Current transfer ratio in selected groups: tm Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. ■ ■ ■ ■ FOD617A: 40–80% FOD817: 50–600% FOD617B: 63–125% FOD817A:80–160% FOD617C: 100–200% FOD817B: 130–260% FOD617D: 160–320% FOD817C:200–400% FOD814: 20–300% FOD817D:300–600% FOD814A: 50–150% C-UL, UL and VDE approved High input-output isolation voltage of 5000Vrms Minimum BVCEO of 70V guaranteed Higher operating temperatures (versus H11AXXX counterparts) Applications FOD814 Series ■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface FOD617 and FOD817 Series ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs Functional Block Diagram ANODE, CATHODE 1 4 COLLECTOR ANODE 1 4 COLLECTOR CATHODE, ANODE 2 3 EMITTER CATHODE 2 3 EMITTER 4 FOD814 FOD617/817 1 ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.) Value Symbol TSTG TOPR TSOL PTOT EMITTER IF VR PD DETECTOR VCEO VECO IC PC Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current Collector Power Dissipation Derate above 90°C 6 50 150 2.9 70 6 (FOD817) 7 (FOD617) V V mA mW mW/°C Continuous Forward Current Reverse Voltage Power Dissipation Derate above 100°C ±50 – 70 1.7 50 6 mW mW/°C mA Units Parameter Storage Temperature Operating Temperature Lead Solder Temperature Total Power Dissipation FOD814 FOD617/817 °C °C °C mW TOTAL DEVICE -55 to +150 -55 to +105 200 -55 to +110 260 for 10 sec 2 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Electrical Characteristics (TA = 25°C Unless otherwise specified.) Individual Component Characteristics Symbol EMITTER VF Forward Voltage FOD814 FOD617 FOD817 IR Ct Reverse Leakage Current Terminal Capacitance FOD617 FOD817 FOD814 FOD617 FOD817 DETECTOR ICEO Collector Dark Current FOD814 FOD617C/D FOD617A/B FOD817 BVCEO Collector-Emitter Breakdown Voltage FOD814 FOD617 FOD817 BVECO Emitter-Collector Breakdown Voltage FOD814 FOD617 FOD817 VCE = 20V, IF = 0 VCE = 10V, IF = 0 VCE = 10V, IF = 0 VCE = 20V, IF = 0 IC = 0.1mA, IF = 0 IC = 100µA, IF = 0 IC = 0.1mA, IF = 0 IE = 10µA, IF = 0 IE = 10µA, IF = 0 IE = 10µA, IF = 0 – – – – 70 70 70 6 7 6 – 1 1 – – – – – – – 100 100 50 100 – – – – – – V V nA IF = ±20mA IF = 60mA IF = 20mA VR = 6.0V VR = 4.0V V = 0, f = 1kHz V = 0, f = 1kHz V = 0, f = 1kHz – – – – – – – – 1.2 1.35 1.2 0.001 – 50 30 30 1.4 1.65 1.4 10 10 250 250 250 pF µA V Parameter Device Test Conditions Min. Typ.* Max. Unit Transfer Characteristics (TA = 25°C Unless otherwise specified.) Symbol DC Characteristic CTR Current Transfer Ratio Device FOD814 FOD814A FOD617A FOD617B FOD617C FOD617D FOD617A FOD617B FOD617C FOD617D FOD817 FOD817A FOD817B FOD817C FOD817D VCE (sat) Collector-Emitter Saturation Voltage FOD814 FOD617 FOD817 *Typical values at TA = 25°C 3 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 www.fairchildsemi.com Test Conditions IF = ±1mA, VCE = 5V(1) Min. 20 50 40 63 100 160 Typ.* – – – – – – – – – – – – – – – 0.1 – 0.1 Max. 300 150 80 125 200 320 – – – – 600 160 260 400 600 0.2 0.4 0.2 Unit % IF = 10mA, VCE = 5V(1) IF = 1mA, VCE = 5V(1) 13 22 34 56 IF = 5mA, VCE = 5V(1) 50 80 130 200 300 IF = ±20mA, IC = 1mA IF = 10mA, IC = 2.5mA IF = 20mA, IC = 1mA – – – V FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Transfer Characteristics (Continued) (TA = 25°C Unless otherwise specified.) Symbol AC Characteristic fC tr Cut-Off Frequency Response Time (Rise) Device FOD814 FOD814 FOD617 FOD817 Test Conditions VCE = 5V, IC = 2mA, RL = 100Ω, -3dB VCE = 2 V, IC = 2mA, RL = 100Ω(2) Min. 15 – Typ.* Max. Unit 80 4 – 18 kHz µs tf Response Time (Fall) FOD814 FOD617 FOD817 – 3 18 µs Isolation Characteristics Symbol VISO Characteristic Input-Output Isolation Voltage(3) Device FOD814 FOD617 FOD817 FOD814 FOD617 FOD817 Test Conditions f = 60Hz, t = 1 min, II-O ≤ 2µA Min. 5000 Typ.* Max. Units Vac(rms) RISO Isolation Resistance VI-O = 500VDC 5x1010 1x1011 — Ω CISO Isolation Capacitance FOD814 FOD617 FOD817 VI-O = 0, f = 1 MHz 0.6 1.0 pf *Typical values at TA = 25°C Notes: 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to page 4. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. 4 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Typical Electrical/Optical Characteristics (TA = 25°C Unless otherwise specified.) COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR POWER DISSIPATION PC (mW) Fig. 1 Collector Power Dissipation vs. Ambient Temperature (FOD814) 200 Fig. 2 Collector Power Dissipation vs. Ambient Temperature (FOD617/817) 200 150 150 100 100 50 50 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) 6 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 3 2 1 0 Fig. 3 Collector-Emitter Saturation Voltage vs. Forward Current Fig. 4 Forward Current vs. Forward Voltage (FOD814) 100 FORWARD CURRENT IF (mA) TA = 105 C 75oC 50 C o o Ic = 0.5m A 1m A 3m A 5m A 7m A Ta = 25°C 10 25oC 0oC 1 -30 C -55 C o o 0 2.5 5.0 7.5 10.0 12.5 FORWARD CURRENT IF (mA) 15.0 0.1 0.5 1.0 1.5 2.0 FORWARD VOLTAGE VF (V) CURRENT TRANSFER RATIO CTR ( %) Fig. 5 Forward Current vs. Forward Voltage (FOD617/817) 100 FORWARD CURRENT IF (mA) TA = 110 C 75oC 50 C o o Fig. 6 Current Transfer Ratio vs. Forward Current 140 120 100 80 60 40 20 V = 5V Ta= 25°C FOD617/817 10 25oC 0oC 1 -30 C -55 C o o FOD814 0.1 0.5 1.0 1.5 2.0 0 0. 1 0.2 FORWARD VOLTAGE VF (V) 0.5 1 2 5 10 20 50 100 FORWARD CURRENT IF (mA) 5 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Typical Electrical/Optical Characteristics (Continued) (TA = 25°C Unless otherwise specified.) Fig. 7 Collector Current vs. Collector-Emitter Voltage (FOD814) 50 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Fig. 8 Collector Current vs. Collector-Emitter Voltage (FOD617/817) 30 I IF = 30mA Ta = 25°C 20mA Pc(MAX.) Ta= 25°C I F = 30m A 40 20 m A 25 20 15 30 Pc (M AX.) 20 10m A 5m A 10mA 10 5m A 10 1m A 0 0 10 20 30 40 50 60 70 80 90 100 COLLECTOR-EMITTER VOLTAGE VCE (V) 5 0 0 10 20 30 40 50 60 70 80 90 COLLECTOR-EMITTER VOLTAGE VCE (V) Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature RELATIVE CURRENT TRANSFER RATIO (%) FOD814 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 FOD617/817 IF = 5mA VCE = 5V IF = 1 mA VCE = 5V Fig. 10 Collector-Emitter Saturation Voltage vs. Ambient Temperature COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 0.12 I = 20mA F 160 0.10 0.08 0.06 0.04 0.02 IC = 1mA AMBIENT TEMPERATURE TA (°C) 0.00 -60 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) Fig. 11 LED Power Dissipation vs. Ambient Temperature (FOD814) LED POWER DISSIPATION PLED (mW) LED POWER DISSIPATION PLED (mW) 100 Fig. 12 LED Power Dissipation vs. Ambient Temperature (FOD617/817) 100 80 80 60 60 40 40 20 20 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) 6 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Typical Electrical/Optical Characteristics (Continued) (TA = 25°C Unless otherwise specified.) Fig. 13 Response Time vs. Load Resistance 100 50 VCE = 2V Ic= 2mA Ta = 25°C Fig. 14 Frequency Response VCE = 2V Ic = 2mA Ta = 25°C RESPONSE TIME (µs) 20 10 5 2 1 0.5 0.2 0.1 tf td ts VOLTAGE GAIN AV (dB) tr 0 RL=10k -10 1k 100 0.1 0.2 0.5 1 2 5 LOAD RESISTANCE RL (kΩ) 10 -20 0.2 0.5 15 2 10 100 FREQUENCY f (kHz) 1000 COLLECTOR DARK CURRENT ICEO (nA) Fig. 15 Collector Dark Current vs. Ambient Temperature VCE = 20V 10000 1000 100 10 1 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) Test Circuit for Response Time Input Vcc Output RL Output Test Circuit for Frequency Response Vcc RD RL Output Input RD 10% 90% td tr ts tf 7 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Package Dimensions (Through Hole) 0.312 (7.92) 0.288 (7.32) 0.276 (7.00) 0.236 (6.00) Package Dimensions (Surface Mount) 0.312 (7.92) 0.288 (7.32) SEATING PLANE 0.157 (4.00) 0.118 (3.00) SEATING PLANE 0.200 (5.10) 0.161 (4.10) 0.200 (5.10) 0.161 (4.10) 0.276 (7.00) 0.236 (6.00) 0.157 (4.00) 0.118 (3.00) 0.010 (0.26) 0.130 (3.30) 0.091 (2.30) 0.020 (0.51) TYP 0.051 (1.30) 0.043 (1.10) 0.024 (0.60) 0.004 (0.10) 0.049 (1.25) 0.030 (0.76) 0.412 (10.46) 0.388 (9.86) 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) 0.010 (0.26) 0.300 (7.62) typ 0.110 (2.79) 0.090 (2.29) Lead Coplanarity 0.004 (0.10) MAX 0.110 (2.79) 0.090 (2.29) Package Dimensions (0.4” Lead Spacing) SEATING PLANE Footprint Dimensions (Surface Mount) 1.5 1.3 0.200 (5.10) 0.161 (4.10) 0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00) 0.130 (3.30) 0.091 (2.30) 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) 0.110 (2.79) 0.090 (2.29) 0.42 (10.66) 0.38 (9.66) 0.110 (2.80) 0.011 (1.80) 0.291 (7.40) 0.252 (6.40) 9 0.010 (0.26) 2.54 Note: All dimensions are in inches (millimeters). 8 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Ordering Information Option S SD W 300 300W 3S 3SD Part Number Example FOD814S FOD814SD FOD814W FOD814300 FOD814300W FOD8143S FOD8143SD Description Surface Mount Lead Bend Surface Mount; Tape and reel 0.4" Lead Spacing VDE Approved VDE Approved, 0.4" Lead Spacing VDE Approved, Surface Mount VDE Approved, Surface Mount, Tape & Reel Marking Information 4 5 V X ZZ Y 3 6 814 1 2 Definitions 1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) One digit year code Two digit work week ranging from ‘01’ to ‘53’ Assembly package code 9 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Carrier Tape Specifications Ø1.55±0.05 P2 P0 1.75±0.1 F W B0 A0 P1 0.3±0.05 K0 Note: All dimensions are in millimeters. Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Compartment Symbol W P0 F P2 P1 A0 B0 K0 Dimensions in mm (inches) 16 ± 0.3 (.63) 4 ± 0.1 (.15) 7.5 ± 0.1 (.295) 2 ± 0.1 (.079) 12 ± 0.1 (.472) 10.45 ± 0.1 (.411) 5.30 ± 0.1 (.209) 4.25 ± 0.1 (.167) 10 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Lead Free Recommended IR Reflow Condition Tp Temperature (°C) Tsmax Ramp-down Tsmin 25°C ts (Preheat) Time (sec) Profile Feature Preheat condition (Tsmin-Tsmax / ts) Melt soldering zone Peak temperature (Tp) Ramp-down rate Soldering zon Pb-Sn solder assembly 100°C ~ 150°C 60 ~ 120 sec 183°C 60 ~ 120 sec 240 +0/-5°C 6°C/sec max. Lead Free assembly 150°C ~ 200°C 60 ~120 sec 217°C 30 ~ 90 sec 260 +0/-5°C 6°C/sec max. Recommended Wave Soldering condition Profile Feature Peak temperature (Tp) For all solder assembly Max 260°C for 10 sec 11 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ Build it Now™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ I2C™ EcoSPARK™ 2 i-Lo™ E CMOS™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production 12 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 www.fairchildsemi.com
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