FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
May 2006
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Features
■ AC input response (FOD814 only) ■ Applicable to Pb-free IR reflow soldering ■ Compact 4-pin package ■ Current transfer ratio in selected groups:
tm
Description
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
■ ■ ■ ■
FOD617A: 40–80% FOD817: 50–600% FOD617B: 63–125% FOD817A:80–160% FOD617C: 100–200% FOD817B: 130–260% FOD617D: 160–320% FOD817C:200–400% FOD814: 20–300% FOD817D:300–600% FOD814A: 50–150% C-UL, UL and VDE approved High input-output isolation voltage of 5000Vrms Minimum BVCEO of 70V guaranteed Higher operating temperatures (versus H11AXXX counterparts)
Applications
FOD814 Series ■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface FOD617 and FOD817 Series ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs
Functional Block Diagram
ANODE, CATHODE 1 4 COLLECTOR
ANODE 1
4 COLLECTOR
CATHODE, ANODE 2
3 EMITTER
CATHODE 2
3 EMITTER
4
FOD814
FOD617/817
1
©2006 Fairchild Semiconductor Corporation
1
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.)
Value Symbol
TSTG TOPR TSOL PTOT EMITTER IF VR PD DETECTOR VCEO VECO IC PC Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current Collector Power Dissipation Derate above 90°C 6 50 150 2.9 70 6 (FOD817) 7 (FOD617) V V mA mW mW/°C Continuous Forward Current Reverse Voltage Power Dissipation Derate above 100°C ±50 – 70 1.7 50 6 mW mW/°C mA
Units
Parameter
Storage Temperature Operating Temperature Lead Solder Temperature Total Power Dissipation
FOD814
FOD617/817
°C °C °C mW
TOTAL DEVICE -55 to +150 -55 to +105 200 -55 to +110 260 for 10 sec
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics Symbol
EMITTER VF Forward Voltage FOD814 FOD617 FOD817 IR Ct Reverse Leakage Current Terminal Capacitance FOD617 FOD817 FOD814 FOD617 FOD817 DETECTOR ICEO Collector Dark Current FOD814 FOD617C/D FOD617A/B FOD817 BVCEO Collector-Emitter Breakdown Voltage FOD814 FOD617 FOD817 BVECO Emitter-Collector Breakdown Voltage FOD814 FOD617 FOD817 VCE = 20V, IF = 0 VCE = 10V, IF = 0 VCE = 10V, IF = 0 VCE = 20V, IF = 0 IC = 0.1mA, IF = 0 IC = 100µA, IF = 0 IC = 0.1mA, IF = 0 IE = 10µA, IF = 0 IE = 10µA, IF = 0 IE = 10µA, IF = 0 – – – – 70 70 70 6 7 6 – 1 1 – – – – – – – 100 100 50 100 – – – – – – V V nA IF = ±20mA IF = 60mA IF = 20mA VR = 6.0V VR = 4.0V V = 0, f = 1kHz V = 0, f = 1kHz V = 0, f = 1kHz – – – – – – – – 1.2 1.35 1.2 0.001 – 50 30 30 1.4 1.65 1.4 10 10 250 250 250 pF µA V
Parameter
Device
Test Conditions
Min.
Typ.*
Max.
Unit
Transfer Characteristics (TA = 25°C Unless otherwise specified.)
Symbol DC Characteristic CTR Current Transfer Ratio Device FOD814 FOD814A FOD617A FOD617B FOD617C FOD617D FOD617A FOD617B FOD617C FOD617D FOD817 FOD817A FOD817B FOD817C FOD817D VCE (sat) Collector-Emitter Saturation Voltage FOD814 FOD617 FOD817 *Typical values at TA = 25°C
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Test Conditions IF = ±1mA, VCE = 5V(1)
Min. 20 50 40 63 100 160
Typ.* – – – – – – – – – – – – – – – 0.1 – 0.1
Max. 300 150 80 125 200 320 – – – – 600 160 260 400 600 0.2 0.4 0.2
Unit %
IF = 10mA, VCE = 5V(1)
IF = 1mA, VCE = 5V(1)
13 22 34 56
IF = 5mA, VCE =
5V(1)
50 80 130 200 300
IF = ±20mA, IC = 1mA IF = 10mA, IC = 2.5mA IF = 20mA, IC = 1mA
– – –
V
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Transfer Characteristics (Continued) (TA = 25°C Unless otherwise specified.) Symbol AC Characteristic
fC tr Cut-Off Frequency Response Time (Rise)
Device
FOD814 FOD814 FOD617 FOD817
Test Conditions
VCE = 5V, IC = 2mA, RL = 100Ω, -3dB VCE = 2 V, IC = 2mA, RL = 100Ω(2)
Min.
15 –
Typ.* Max. Unit
80 4 – 18 kHz µs
tf
Response Time (Fall)
FOD814 FOD617 FOD817
–
3
18
µs
Isolation Characteristics Symbol
VISO
Characteristic
Input-Output Isolation Voltage(3)
Device
FOD814 FOD617 FOD817 FOD814 FOD617 FOD817
Test Conditions
f = 60Hz, t = 1 min, II-O ≤ 2µA
Min.
5000
Typ.*
Max.
Units
Vac(rms)
RISO
Isolation Resistance
VI-O = 500VDC
5x1010
1x1011
—
Ω
CISO
Isolation Capacitance
FOD814 FOD617 FOD817
VI-O = 0, f = 1 MHz
0.6
1.0
pf
*Typical values at TA = 25°C Notes: 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to page 4. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Typical Electrical/Optical Characteristics (TA = 25°C Unless otherwise specified.)
COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR POWER DISSIPATION PC (mW) Fig. 1 Collector Power Dissipation vs. Ambient Temperature (FOD814) 200 Fig. 2 Collector Power Dissipation vs. Ambient Temperature (FOD617/817) 200
150
150
100
100
50
50
0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C)
0 -55 -40 -20
0
20
40
60
80 100 120
AMBIENT TEMPERATURE TA (°C)
6 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 3 2 1 0
Fig. 3 Collector-Emitter Saturation Voltage vs. Forward Current
Fig. 4 Forward Current vs. Forward Voltage (FOD814) 100 FORWARD CURRENT IF (mA)
TA = 105 C 75oC 50 C
o o
Ic = 0.5m A 1m A 3m A 5m A 7m A
Ta = 25°C
10
25oC 0oC
1
-30 C -55 C
o
o
0
2.5 5.0 7.5 10.0 12.5 FORWARD CURRENT IF (mA)
15.0
0.1 0.5
1.0
1.5
2.0
FORWARD VOLTAGE VF (V)
CURRENT TRANSFER RATIO CTR ( %)
Fig. 5 Forward Current vs. Forward Voltage (FOD617/817) 100 FORWARD CURRENT IF (mA)
TA = 110 C 75oC 50 C
o o
Fig. 6 Current Transfer Ratio vs. Forward Current
140 120 100 80 60 40 20
V = 5V Ta= 25°C FOD617/817
10
25oC 0oC
1
-30 C -55 C
o
o
FOD814
0.1 0.5
1.0
1.5
2.0
0 0. 1 0.2
FORWARD VOLTAGE VF (V)
0.5 1 2 5 10 20 50 100 FORWARD CURRENT IF (mA)
5 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Typical Electrical/Optical Characteristics (Continued) (TA = 25°C Unless otherwise specified.)
Fig. 7 Collector Current vs. Collector-Emitter Voltage (FOD814)
50
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
Fig. 8 Collector Current vs. Collector-Emitter Voltage (FOD617/817)
30
I IF = 30mA Ta = 25°C 20mA Pc(MAX.)
Ta= 25°C I F = 30m A
40 20 m A
25 20 15
30
Pc (M AX.)
20
10m A 5m A
10mA
10
5m A
10 1m A 0 0 10 20 30 40 50 60 70 80 90 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
5 0 0 10 20 30 40 50 60 70 80 90
COLLECTOR-EMITTER VOLTAGE VCE (V)
Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature
RELATIVE CURRENT TRANSFER RATIO (%)
FOD814 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 FOD617/817
IF = 5mA VCE = 5V
IF = 1 mA VCE = 5V
Fig. 10 Collector-Emitter Saturation Voltage vs. Ambient Temperature
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
0.12
I = 20mA
F
160
0.10 0.08 0.06 0.04 0.02
IC = 1mA
AMBIENT TEMPERATURE TA (°C)
0.00 -60 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C)
Fig. 11 LED Power Dissipation vs. Ambient Temperature (FOD814)
LED POWER DISSIPATION PLED (mW) LED POWER DISSIPATION PLED (mW)
100
Fig. 12 LED Power Dissipation vs. Ambient Temperature (FOD617/817)
100
80
80
60
60
40
40
20
20
0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C)
0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C)
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Typical Electrical/Optical Characteristics (Continued) (TA = 25°C Unless otherwise specified.)
Fig. 13 Response Time vs. Load Resistance
100 50 VCE = 2V Ic= 2mA Ta = 25°C
Fig. 14 Frequency Response
VCE = 2V Ic = 2mA Ta = 25°C
RESPONSE TIME (µs)
20 10 5 2 1 0.5 0.2 0.1
tf td ts
VOLTAGE GAIN AV (dB)
tr
0
RL=10k -10
1k
100
0.1 0.2 0.5 1 2 5 LOAD RESISTANCE RL (kΩ)
10
-20 0.2
0.5 15 2 10 100 FREQUENCY f (kHz)
1000
COLLECTOR DARK CURRENT ICEO (nA)
Fig. 15 Collector Dark Current vs. Ambient Temperature
VCE = 20V
10000 1000 100 10 1 0.1 0.01 -60 -40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE TA (°C)
Test Circuit for Response Time
Input Vcc Output RL Output
Test Circuit for Frequency Response
Vcc RD RL Output
Input
RD
10% 90%
td tr
ts tf
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Package Dimensions (Through Hole)
0.312 (7.92) 0.288 (7.32) 0.276 (7.00) 0.236 (6.00)
Package Dimensions (Surface Mount)
0.312 (7.92) 0.288 (7.32)
SEATING PLANE
0.157 (4.00) 0.118 (3.00)
SEATING PLANE
0.200 (5.10) 0.161 (4.10)
0.200 (5.10) 0.161 (4.10)
0.276 (7.00) 0.236 (6.00)
0.157 (4.00) 0.118 (3.00) 0.010 (0.26)
0.130 (3.30) 0.091 (2.30)
0.020 (0.51) TYP
0.051 (1.30) 0.043 (1.10)
0.024 (0.60) 0.004 (0.10)
0.049 (1.25) 0.030 (0.76) 0.412 (10.46) 0.388 (9.86)
0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40)
0.010 (0.26) 0.300 (7.62) typ
0.110 (2.79) 0.090 (2.29) Lead Coplanarity 0.004 (0.10) MAX
0.110 (2.79) 0.090 (2.29)
Package Dimensions (0.4” Lead Spacing)
SEATING PLANE
Footprint Dimensions (Surface Mount)
1.5 1.3
0.200 (5.10) 0.161 (4.10)
0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00)
0.130 (3.30) 0.091 (2.30) 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) 0.110 (2.79) 0.090 (2.29) 0.42 (10.66) 0.38 (9.66) 0.110 (2.80) 0.011 (1.80)
0.291 (7.40) 0.252 (6.40)
9
0.010 (0.26)
2.54
Note: All dimensions are in inches (millimeters).
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Ordering Information
Option
S SD W 300 300W 3S 3SD
Part Number Example
FOD814S FOD814SD FOD814W FOD814300 FOD814300W FOD8143S FOD8143SD
Description
Surface Mount Lead Bend Surface Mount; Tape and reel 0.4" Lead Spacing VDE Approved VDE Approved, 0.4" Lead Spacing VDE Approved, Surface Mount VDE Approved, Surface Mount, Tape & Reel
Marking Information
4
5
V X ZZ Y
3
6
814
1
2
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) One digit year code Two digit work week ranging from ‘01’ to ‘53’ Assembly package code
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Carrier Tape Specifications
Ø1.55±0.05 P2 P0 1.75±0.1
F W B0 A0 P1 0.3±0.05
K0
Note: All dimensions are in millimeters.
Description
Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Compartment
Symbol
W P0 F P2 P1 A0 B0 K0
Dimensions in mm (inches)
16 ± 0.3 (.63) 4 ± 0.1 (.15) 7.5 ± 0.1 (.295) 2 ± 0.1 (.079) 12 ± 0.1 (.472) 10.45 ± 0.1 (.411) 5.30 ± 0.1 (.209) 4.25 ± 0.1 (.167)
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Lead Free Recommended IR Reflow Condition
Tp
Temperature (°C)
Tsmax
Ramp-down
Tsmin
25°C ts (Preheat) Time (sec)
Profile Feature
Preheat condition (Tsmin-Tsmax / ts) Melt soldering zone Peak temperature (Tp) Ramp-down rate
Soldering zon
Pb-Sn solder assembly
100°C ~ 150°C 60 ~ 120 sec 183°C 60 ~ 120 sec 240 +0/-5°C 6°C/sec max.
Lead Free assembly
150°C ~ 200°C 60 ~120 sec 217°C 30 ~ 90 sec 260 +0/-5°C 6°C/sec max.
Recommended Wave Soldering condition
Profile Feature
Peak temperature (Tp)
For all solder assembly
Max 260°C for 10 sec
11 FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ Build it Now™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ I2C™ EcoSPARK™ 2 i-Lo™ E CMOS™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I19
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
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