FQA11N90C_F109

FQA11N90C_F109 900V N-Channel MOSFET September 2007 QFET FQA11N90C_F109 900V N-Channel MOSFET Features • • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G TO-3PN G DS FQA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter FQA11N90C_F109 900 11.0 6.9 44.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 960 11.0 30 4.0 300 2.38 -55 to +150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -- Max 0.42 -40 Units °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA11N90C_F109 Rev. A FQA11N90C_F109 900V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQA11N90C Device FQA11N90C_F109 Package TO-3PN Reel Size -- Tape Width -- Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 900 V, VGS = 0 V VDS = 720 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 5.5 A VDS = 50 V, ID = 5.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 900 -----3.0 ------ Typ -1.02 -----0.91 9.0 2530 215 23 Max Units --10 100 100 -100 5.0 1.1 -3290 280 30 V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 450 V, ID = 11.0A, RG = 25 Ω ---(Note 4, 5) 60 130 130 85 60 13 25 ---1000 17.0 130 270 270 180 80 --- ---- VDS = 720 V, ID = 11.0A, VGS = 10 V (Note 4, 5) -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS =11.0 A VGS = 0 V, IS = 11.0 A, dIF / dt = 100 A/µs (Note 4) ------ 11.0 44 1.4 --- A A V ns µC 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 15mH, IAS =11.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 11.0A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQA11N90C_F109 Rev. A 2 www.fairchildsemi.com FQA11N90C_F109 900V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : Figure 2. Transfer Characteristics 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 150 C -55 C o o 10 0 25 C 10 0 o 10 -1 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 0 1 10 -1 ※ Notes : 1. VDS = 50V 2. 250µ s Pulse Test 10 10 10 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.5 RDS(ON) [Ω ], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 2.0 VGS = 10V VGS = 20V 10 1 1.5 10 0 1.0 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test ※ Note : TJ = 25℃ 0.5 0 5 10 15 20 25 30 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 4500 4000 3500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 Ciss VGS, Gate-Source Voltage [V] 10 VDS = 180V VDS = 450V VDS = 720V Capacitance [pF] 3000 2500 8 Coss 2000 1500 1000 500 0 -1 10 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 6 4 Crss 2 ※ Note : ID = 11A 0 10 0 10 1 0 10 20 30 40 50 60 70 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQA11N90C_F109 Rev. A 3 www.fairchildsemi.com FQA11N90C_F109 900V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 5.5 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 12 10 2 Operation in This Area is Limited by R DS(on) 10 ID, Drain Current [A] ID, Drain Current [A] 10 µs 100 µs 10 1 1 ms 10 ms DC 8 6 10 0 4 10 -1 ※ Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 2 10 -2 10 0 10 1 10 2 10 3 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 11. Transient Thermal Response Curve Zθ JC(t), Thermal Response D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 0 .0 2 ※ N o te s : 1 . Z θ J C ( t) = 0 . 4 2 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) PDM t1 s in g le p u ls e 10 -2 0 .0 1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] FQA11N90C_F109 Rev. A 4 www.fairchildsemi.com FQA11N90C_F109 900V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQA11N90C_F109 Rev. A 5 www.fairchildsemi.com FQA11N90C_F109 900V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQA11N90C_F109 Rev. A 6 www.fairchildsemi.com FQA11N90C_F109 900V N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters 7 www.fairchildsemi.com FQA11N90C_F109 Rev. A FQA11N90C_F109 900V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 8 FQA11N90C_F109 Rev. A www.fairchildsemi.com