FQA28N15_F109

FQA28N15 / FQA28N15_F109 150V N-Channel MOSFET August 2007 QFET FQA28N15 / FQA28N15_F109 150V N-Channel MOSFET Features • • • • • • • 33A, 150V, RDS(on) = 0.09Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 50pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G TO-3P G DS FQA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter FQA28N15 150 33 23.3 132 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 33 22.7 5.5 227 1.52 -55 to +175 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -- Max 0.66 -40 Units °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA28N15 / FQA28N15_F109 Rev. A1 FQA28N15 / FQA28N15_F109 150V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQA28N15 FQA28N15 Device FQA28N15 FQA28N15_F109 Package TO-3P TO-3PN TC = 25°C unless otherwise noted Reel Size --- Tape Width --- Quantity 30 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 150 V, VGS = 0 V VDS = 120 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 16.5A VDS = 40 V, ID = 16.5A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 150 -----2.0 ------ Typ -0.17 -----0.067 20 1250 260 50 Max Units --1 10 100 -100 4.0 0.09 -1600 340 65 V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 75 V, ID = 28A, RG = 25 Ω ---(Note 4, 5) 17 180 100 115 40 7.9 20 ---100 0.4 45 370 210 240 52 --- ---- VDS = 120 V, ID = 28A, VGS = 10 V (Note 4, 5) -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS =33A VGS = 0 V, IS = 28 A, dIF / dt = 100 A/µs (Note 4) ------ 33 132 1.5 --- A A V ns µC 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.46mH, IAS =33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 28A, di/dt ≤300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQA28N15 / FQA28N15_F109 Rev. A1 2 www.fairchildsemi.com FQA28N15 / FQA28N15_F109 150V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 2 Figure 2. Transfer Characteristics 10 2 10 ID, Drain Current [A] ID, Drain Current [A] 10 1 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 1 175℃ 10 0 25℃ -55℃ 10 0 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 300 10 2 RDS(ON) [mΩ ], Drain-Source On-Resistance VGS = 20V 180 IDR, Reverse Drain Current [A] 240 VGS = 10V 10 1 120 10 0 60 ※ Note : TJ = 25℃ 175℃ -1 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0 0 20 40 60 80 100 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] 2500 10 VDS = 30V VDS = 75V VDS = 120V Capacitance [pF] 2000 Ciss Coss 8 1500 6 1000 Crss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 4 500 2 ※ Note : ID = 28 A 0 -1 10 10 0 10 1 0 0 9 18 27 36 45 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQA28N15 / FQA28N15_F109 Rev. A1 3 www.fairchildsemi.com FQA28N15 / FQA28N15_F109 150V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 14 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 35 Operation in This Area is Limited by R DS(on) 30 10 2 ID, Drain Current [A] 1 ms 10 ms 10 1 ID, Drain Current [A] 100 µs 25 20 15 10 5 0 25 DC 10 0 ※ Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 10 -1 10 0 10 1 10 2 50 75 100 125 150 175 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 11. Transient Thermal Response Curve 10 0 Zθ JC(t), Thermal Response D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e ※ N o te s : 1 . Z θ J C ( t) = 0 .6 6 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] FQA28N15 / FQA28N15_F109 Rev. A1 4 www.fairchildsemi.com FQA28N15 / FQA28N15_F109 150V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQA28N15 / FQA28N15_F109 Rev. A1 5 www.fairchildsemi.com FQA28N15 / FQA28N15_F109 150V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQA28N15 / FQA28N15_F109 Rev. A1 6 www.fairchildsemi.com FQA28N15 / FQA28N15_F109 150V N-Channel MOSFET Mechanical Dimensions TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters FQA28N15 / FQA28N15_F109 Rev. A1 7 www.fairchildsemi.com FQA28N15 / FQA28N15_F109 150V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3PN Dimensions in Millimeters 8 www.fairchildsemi.com FQA28N15 / FQA28N15_F109 Rev. A1 FQA28N15 / FQA28N15_F109 150V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 9 FQA28N15 / FQA28N15_F109 Rev. A1 www.fairchildsemi.com