FQA8N80C

FQA8N80C 800V N-Channel MOSFET September 2006 QFET FQA8N80C 800V N-Channel MOSFET Features • • • • • • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 13pF) Fast switching 100% avalanche tested Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G TO-3P G DS FQA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter FQA8N80C 800 8.4 5.3 33.6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 850 8.4 22 4.0 220 1.75 -55 to +150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -- Max 0.57 -40 Units °C/W °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA8N80C Rev. A1 FQA8N80C 800V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQA8N80C FQA8N80C Device FQA8N80C FQA8N80C_F109 Package TO-3P TO-3PN Reel Size --- Tape Width --- Quantity 30 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 4.2 A VDS = 50 V, ID = 4.2 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 800 -----3.0 ------ Typ -1.02 -----1.29 5.7 1580 135 13 Max Units --10 100 100 -100 5.0 1.55 -2050 175 17 V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 400 V, ID = 8.0A, RG = 25 Ω ---(Note 4, 5) 40 110 65 70 35 10 14 ---690 8.2 90 230 140 150 45 --- ---- VDS = 640 V, ID = 8.0A, VGS = 10 V (Note 4, 5) -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS =8.4 A VGS = 0 V, IS = 8.4 A, dIF / dt = 100 A/µs (Note 4) ------ 8.4 33.6 1.4 --- A A V ns µC 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 22.6mH, IAS =8.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 8.4A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQA8N80C Rev. A1 2 www.fairchildsemi.com FQA8N80C 800V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : Figure 2. Transfer Characteristics 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 150 C -55 C o o 10 0 25 C 10 0 o 10 -1 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 50V 2. 250µs Pulse Test 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 3.0 RDS(ON) [Ω ], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 2.5 10 1 VGS = 10V 2.0 VGS = 20V 10 0 1.5 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test ※ Note : TJ = 25℃ 1.0 0 4 8 12 16 20 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VDS = 160V 10 VGS, Gate-Source Voltage [V] 2000 Ciss VDS = 400V VDS = 640V Capacitance [pF] 8 1500 Coss 1000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 6 4 500 Crss 2 ※ Note : ID = 8A 0 -1 10 10 0 10 1 0 0 10 20 30 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQA8N80C Rev. A1 3 www.fairchildsemi.com FQA8N80C 800V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.0 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 10 2 Operation in This Area is Limited by R DS(on) 10 µs 8 ID, Drain Current [A] 10 1 1 ms 10 ms DC ID, Drain Current [A] 100 µs 6 10 0 4 10 -1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 2 10 -2 10 0 10 1 10 2 10 3 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 11. Transient Thermal Response Curve 10 0 Zθ JC(t), Thermal Response D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 10 -2 ※ N o te s : 1 . Z θ J C (t) = 0 .5 7 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) PDM t1 s in g le p u ls e t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQA8N80C Rev. A1 4 www.fairchildsemi.com FQA8N80C 800V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQA8N80C Rev. A1 5 www.fairchildsemi.com FQA8N80C 800V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQA8N80C Rev. A1 6 www.fairchildsemi.com FQA8N80C 800V N-Channel MOSFET Mechanical Dimensions TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters FQA8N80C Rev. A1 7 www.fairchildsemi.com FQA8N80C 800V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3PN Dimensions in Millimeters 8 www.fairchildsemi.com FQA8N80C Rev. A1 FQA8N80C 800V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. OCX™ SILENT SWITCHER® UniFET™ FACT Quiet Series™ ACEx™ OCXPro™ UltraFET® GlobalOptoisolator™ ActiveArray™ SMART START™ OPTOLOGIC® GTO™ Bottomless™ SPM™ VCX™ HiSeC™ Build it Now™ Stealth™ Wire™ OPTOPLANAR™ I2C™ CoolFET™ SuperFET™ PACMAN™ CROSSVOLT™ SuperSOT™-3 POP™ i-Lo™ DOME™ SuperSOT™-6 Power247™ ImpliedDisconnect™ EcoSPARK™ SuperSOT™-8 PowerEdge™ IntelliMAX™ E2CMOS™ SyncFET™ PowerSaver™ ISOPLANAR™ TCM™ PowerTrench® LittleFET™ EnSigna™ TinyBoost™ MICROCOUPLER™ FACT™ QFET® TinyBuck™ MicroFET™ FAST® QS™ TinyPWM™ MicroPak™ QT Optoelectronics™ FASTr™ TinyPower™ MICROWIRE™ Quiet Series™ FPS™ TinyLogic® MSX™ RapidConfigure™ FRFET™ MSXPro™ RapidConnect™ TINYOPTO™ µSerDes™ Across the board. Around the world.™ TruTranslation™ ScalarPump™ The Power Franchise® UHC™ Programmable Active Droop™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production 9 FQA8N80C Rev. A1 www.fairchildsemi.com