FQA90N15

FQH90N15 / FQA90N15 N-Channel Power MOSFET QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply. D ! " G! GD S !" " " TO-247 FQH Series TO-3P G DS FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FQH90N15/FQA90N15 150 90 63.5 360 ±25 1400 90 37.5 6.0 375 2.5 -55 to +175 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. -0.24 -- Max. 0.4 -40 Unit °C/W °C/W °C/W ©2004 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQH90N15 / FQA90N15 Rev. B FQH90N15 / FQA90N15 N-Channel Power MOSFET Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 150V, VGS = 0V VDS = 120V, TC = 150°C VGS = 25V, VDS = 0V VGS = -25V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 45A VDS = 40V, ID = 45A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 150 ------ Typ. -0.15 ----- Max Units --1 10 100 -100 V V/°C µA µA nA nA On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 2.0 ---0.014 68 4.0 0.018 -V Ω S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---6700 1400 200 8700 1800 260 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 120V, ID = 90A VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 75V, ID = 90A RG = 25Ω -------- 105 760 470 410 220 43 110 220 1500 950 830 285 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.29mH, IAS = 90A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 90A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 90A VGS = 0V, IS = 90A dIF/dt =100A/µs (Note 4) ------ ---175 0.97 90 360 1.5 --- A A V ns µC 2 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] ID , Drain Current [A] 10 2 10 1 175 C o 25 C 10 0 o 10 1 -55 C Notes : 1. VDS = 3 0V 2. 250µs Pulse Test o Notes : 1. 250µs Pulse Test o 2. TC = 25 C -1 0 1 10 -1 10 10 10 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , G ate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.12 Figure 4. Body Diode Forward Voltage Variation vs. Source Current IDR , Reverse Drain Current [A] Drain-Source On-Resistance 10 2 0.09 VGS = 10V 0.06 RDS(on) [Ω], 10 1 VGS = 20V 0.03 o 10 0 175 C 25oC o Notes : 1. VGS = 0V 2. 250µs Pulse Test Note : TJ = 25 C 0.00 0 50 100 150 200 250 300 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 18000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Figure 6. Gate Charge Characteristics 12 15000 Crss = Cgd 10 V DS = 30V V DS = 75V VGS, Gate-Source Voltage [V] Capacitance [pF] 12000 Ciss Coss 8 VDS = 120V 9000 6 6000 4 Crss 3000 Notes : 1. VGS = 0 V 2. f = 1 MHz 2 Note : ID = 90 A 0 -1 10 0 10 0 10 1 0 50 100 150 200 250 VDS, Drain-Source Voltage [V] Q G, Total Gate Charge [nC] 3 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) 1.1 Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 Notes : 1. V GS = 10 V 2. ID = 45 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 100 10 3 Operation in This Area is Limited by R DS(on) 80 ID, Drain Current [A] 10 2 1 ms DC 10 ms ID, Drain Current [A] 100 µs 10 µs 60 10 1 40 10 0 Notes : o 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o 20 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 o 150 175 VDS, Drain-Source Voltage [V] T C, Case Temperature [ C] Figure 11. Transient Thermal Response Curve (t), Thermal Response D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 0 .0 2 N o te s : 1 . Z ? JC ( t) = 0 .4 o C /W M a x . (t) 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T JM - T C = P DM * Z ? JC PDM s in g le p u ls e θJC 10 -2 0 .0 1 t1 t2 Z 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 4 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS VGS RG RL VDD VDS 90% 10V DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time 5 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 6 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters 7 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters 8 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14