FQB16N25C

FQB16N25C/FQI16N25C 250V N-Channel MOSFET June 2006 QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features • 15.6A, 250V, RDS(on) = 0.27 Ω @VGS = 10 V • Low gate charge ( typical 41nC) • Low Crss ( typical 68pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D D G S D2-PAK FQB Series I2-PAK GDS FQI Series G S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter FQB16N25C / FQI16N25C 250 15.6 9.8 62.4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C 410 15.6 13.9 5.5 3.13 139 1.11 -55 to +150 300 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient FQB16N25C / FQI16N25C 0.9 40 62.5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQB16N25C/FQI16N25C Rev. A1 FQB16N25C/FQI16N25C 250V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQB16N25C FQI16N25C Device FQB16N25CTM FQI16N25CTU Package D2-PAK I2-PAK Reel Size 330mm -- Tape Width 24mm -- Quantity 800 50 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 7.8A VDS = 40 V, ID = 7.8 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 250 -----2.0 ------ Typ -0.31 -----0.22 10.5 830 170 68 15 130 135 105 41 5.6 22.7 ---260 2.47 Max Units --10 100 100 -100 4.0 0.27 -1080 220 89 40 270 280 220 53.5 --15.6 62.4 1.5 --V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns µC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 125 V, ID = 15.6A, RG = 25 Ω ---(Note 4, 5) --------- VDS = 200 V, ID = 15.6A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 15.6 A VGS = 0 V, IS = 15.6 A, dIF / dt = 100 A/µs (Note 4) -- 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.7mH, IAS = 15.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 15.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQB16N25C/FQI16N25C Rev. A1 2 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : Figure 2. Transfer Characteristics ID, Drain Current [A] ID, Drain Current [A] 10 1 10 1 150 C o 25 C 10 0 o -55 C o 10 0 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test 10 -1 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.5 RDS(ON) [Ω ], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 1.0 10 1 VGS = 10V 0.5 10 0 150℃ VGS = 20V 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test ※ Note : TJ = 25℃ 0.0 0 10 20 30 40 50 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 2500 VGS, Gate-Source Voltage [V] 10 VDS = 50V VDS = 125V VDS = 200V Capacitance [pF] 2000 8 Ciss 1500 Coss Crss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 0 1 6 1000 4 500 2 ※ Note : ID = 15.6A 0 -1 10 0 10 10 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQB16N25C/FQI16N25C Rev. A1 3 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 7.8 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 16 10 2 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 1 ms 10 1 10 ms DC ID, Drain Current [A] 100 µs 12 8 10 0 ※ Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 4 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃ ] Figure 11. Transient Thermal Response Curve 10 0 ZθJC(t), Thermal Response D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 ※ N o te s : 1 . Z θ J C ( t) = 0 .9 0 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) PDM s in g le p u ls e t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] FQB16N25C/FQI16N25C Rev. A1 4 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB16N25C/FQI16N25C Rev. A1 5 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB16N25C/FQI16N25C Rev. A1 6 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET Mechanical Dimensions D2-PAK (0.40) 9.90 ±0.20 4.50 ±0.20 1.30 –0.05 +0.10 1.20 ±0.20 9.20 ±0.20 15.30 ±0.30 1.40 ±0.20 2.00 ±0.10 0.10 ±0.15 2.54 ±0.30 9.20 ±0.20 www.fairchildsemi.com 2.40 ±0.20 4.90 ±0.20 (0.75) 1.27 ±0.10 2.54 TYP 0.80 ±0.10 2.54 TYP 10.00 ±0.20 (8.00) (4.40) ~ 0° 3° +0.10 0.50 –0.05 10.00 ±0.20 15.30 ±0.30 (1.75) (2XR0.45) 0.80 ±0.10 Dimensions in Millimeters FQB16N25C/FQI16N25C Rev. A1 7 4.90 ±0.20 (7.20) FQB16N25C/FQI16N25C 250V N-Channel MOSFET Package Dimensions (Continued) I2-PAK 9.90 ±0.20 4.50 ±0.20 +0.10 (0.40) 1.30 –0.05 1.20 ±0.20 9.20 ±0.20 MAX 3.00 (1.46) 13.08 ±0.20 (0.94) 1.27 ±0.10 1.47 ±0.10 0.80 ±0.10 10.08 ±0.20 MAX13.40 5° (4 ) 0.50 –0.05 +0.10 2.54 TYP 2.54 TYP 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FQB16N25C/FQI16N25C Rev. A1 8 www.fairchildsemi.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production 9 FQB16N25C/FQI16N25C Rev. A1 www.fairchildsemi.com