FQB22P10TM_F085

FQB22P10TM_F085 100V P-Channel MOSFET February 2009 QFET ® FQB22P10TM_F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • • • • • • • • • -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Qualified to AEC Q101 RoHS Compliant D D G S G D2-PAK FQB Series TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD S FQB22P10TM_F085 -100 -22 -15.6 Units V A A A V mJ A mJ V/ns W W W/°C °C °C Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) -88 ±30 710 -22 12.5 -6.0 3.75 125 0.83 -55 to +175 300 Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.2 40 62.5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©200 9 F airchild Semiconductor Corporation F QB22P10TM_F085 Rev. A 1 w ww.fairchildsemi.com FQB22P10TM_F085 100V P-Channel MOSFET Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -100 V, VGS = 0 V VDS = -80 V, TC = 125°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -100 -------0.1 -------1 -10 -100 100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -11 A VDS = -40 V, ID = -11 A (Note 4) -2.0 --- -0.096 13.5 -4.0 0.125 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---1170 460 160 1500 600 200 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -80 V, ID = -22 A, VGS = -10 V VDD = -50 V, ID = -22 A, RG = 25 Ω (Note 4, 5) ------(Note 4, 5) 17 170 60 110 40 7.0 21 45 350 130 230 50 --- ns ns ns ns nC nC nC -- Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -22 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -22 A, dIF / dt = 100 A/µs (Note 4) ------ ---110 0.6 -22 -88 -4.0 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.2mH, IAS = -22A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature F QB22P10TM_F085 Rev. A 2 w ww.fairchildsemi.com FQB22P10TM_F085 100V P-Channel MOSFET Typical Characteristics -ID, Drain Current [A] 10 1 -ID , Drain Current [A] VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : -4.5 V Top : 10 1 175℃ 10 0 25℃ -55℃ ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test 10 0 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 10 0 10 1 10 -1 2 4 -VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] 6 8 10 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 2. Transfer Characteristics 0.5 VGS = - 10V -I DR , Reverse Drain Current [A] RDS(on) [ Ω], Drain-Source On-Resistance 0.4 10 1 0.3 VGS = - 20V 0.2 10 0 175℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0.1 ※ Note : TJ = 25℃ 0.0 0 10 20 30 -ID , Drain Current [A] 40 50 60 70 80 90 100 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3500 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 Ciss 2500 10 VDS = -20V VDS = -50V VDS = -80V Coss -V GS , Gate-Source Voltage [V] 8 Capacitance [pF] 2000 1500 1000 500 0 -1 10 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 6 Crss 4 2 ※ Note : ID = -22 A 0 10 0 10 1 0 10 20 30 40 50 -VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics F QB22P10TM_F085 Rev. A 3 w ww.fairchildsemi.com FQB22P10TM_F085 100V P-Channel MOSFET Typical Characteristics (Continued) 1.2 2.5 -BV DSS , (Norm alized) Drain-Source Breakdown Voltage RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 2.0 1.5 1.0 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = -250 μ A 0.5 ※ Notes : 1. VGS = -10 V 2. ID = -11 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 25 Operation in This Area is Limited by R DS(on) 10 2 20 100 µs -I D, Drain Current [A] -I D, Drain Current [A] 1 ms 10 1 10 ms DC 15 10 10 0 ※ Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 5 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 175 -VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature ( t) , T h e r m a l R e s p o n s e 10 0 D = 0 .5 0 .2 0 .1 10 -1 ※ N o te s : 1 . Z θ J C ( t) = 1 .2 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 5 0 .0 2 0 .0 1 s i n g l e p u ls e PDM t1 t2 Z θ JC 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve F QB22P10TM_F085 Rev. A 4 w ww.fairchildsemi.com FQB22P10TM_F085 100V P-Channel MOSFET Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS -10V Qgs Qg VGS DUT -3mA Qgd Charge Resistive Switching Test Circuit & Waveforms VDS RG -10V VGS RL VDD td(on) t on tr td(off) t off tf VGS 10% DUT VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms VDS ID RG -10V tp L BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD tp Time VDS (t) VDD DUT VDD ID (t) IAS BVDSS F QB22P10TM_F085 Rev. A 5 w ww.fairchildsemi.com FQB22P10TM_F085 100V P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT I SD _ L Driver RG Compliment of DUT (N-Channel) VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V I SD ( DUT ) Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt VDD F QB22P10TM_F085 Rev. A 6 w ww.fairchildsemi.com FQB22P10TM_F085 100V P-Channel MOSFET Package Dimensions D2-PAK (0.40) 9.90 ±0.20 4.50 ±0.20 1.30 –0.05 +0.10 1.20 ±0.20 9.20 ±0.20 15.30 ±0.30 1.40 ±0.20 2.00 ±0.10 0.10 ±0.15 2.54 ±0.30 w ww.fairchildsemi.com 2.40 ±0.20 4.90 ±0.20 (0.75) 1.27 ±0.10 2.54 TYP 0.80 ±0.10 2.54 TYP 10.00 ±0.20 (8.00) (4.40) 0° ~3 ° +0.10 0.50 –0.05 10.00 ±0.20 15.30 ±0.30 (1.75) (7.20) 0.80 ±0.10 4.90 ±0.20 (2XR0.45) Dimensions in Millimeters F QB22P10TM_F085 Rev. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I38 F QB22P10TM_F085 Rev. A 8 w ww.fairchildsemi.com