FQB25N33

FQB25N33 330V N-Channel MOSFET QFET FQB25N33 330V N-Channel MOSFET Features • 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V • Low gate charge (typical 58nC) • Low Crss (typical 40pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant LE REE I DF September 2006 ® General Description These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. • Qualified to AEC Q101 A Absolute Maximum Ratings Symbol VDSS Drain-Source Voltage ID IDM VGSS EAS IAR EAR dv/dt PD Drain Current Drain Current Parameter FQB25N33 330 25 16.0 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 100 ±30 370 25 37 4.5 3.1 250 2.0 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/oC o o - Continuous (TC = 25oC) - Continuous (TC = 100oC) M ENTATIO LE N MP - Pulsed Gate -Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalance Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25oC) * Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG Operating and Storage Temperature TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds C C Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient * Thermal Resistance, Junction to Ambient FQB25N33 0.5 40 62.5 Units o o o C/W C/W C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB25N33 Rev. A 1 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQB25N33 Device FQB25N33 Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V o Parameter Test Conditions Min 330 ------ Typ Max Units -0.34 ------1 10 100 -100 V V/oC µA nA nA Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25 C Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Forward VDS = 330V,VGS = 0V VDS = 264V,TC =125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Drain to Source On Resistance Forward Transonductance VDS = VGS, ID = 250µA VGS = 10V, ID = 12.5A, VDS = 50V, ID = 12.5A, (Note 4) 3.0 ---0.18 1 5.0 0.23 -V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz ---1510 290 40 2010 385 60 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge VDD = 165V, ID = 25A RGS = 25Ω (Note 4, 5) VDS = 297V, ID = 25A, VGS = 15V, (Note 4, 5) -------20 100 90 70 58 11.2 21 35 160 145 110 75 --ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0, IS = 25A VGS = 0, IS = 25A, dIF/dt = 100A/µs (Note 4) --------275 3.6 25 100 1.5 --A A V ns µC Notes: 1: Repetitive Rating : Pluse width Limited by maximum junction temperature 2: L = 1.79mH, IAS = 25A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC 3: ISD ≤ 25A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25oC 4: Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5: Essentially independent of operating temperature FQB25N33 Rev. A 2 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS Top : 15.0 V 10.0 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V 100 ID, Drain Current [A] ID, Drain Current [A] 10 10 150 C 25 C o o -55 C o 1 1 * Notes : 1. 250µs Pulse Test o 2. TC = 25 C * Notes : 1. VDS = 50V 2. 250µs Pulse Test 0.1 0.1 1 10 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.45 0.40 0.35 0.30 0.25 0.20 0.15 * Note : TJ = 25 C o 100 RDS(ON) [Ω ], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 10 VGS = 10V 1 150 C 0.1 o 25 C o 0.01 VGS = 15V 1E-3 * Notes : 1. VGS = 0V 2. 250µs Pulse Test 0.10 0 10 20 30 40 50 60 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 4000 Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) VDS = 66V 10 VDS = 165V VDS = 264V Capacitances [pF] CAPACITANCE (pF) 3000 8 2000 Ciss 6 4 Coss 1000 Crss * Note ; 1. VGS = 0 V 2. f = 1 MHz 2 * Note : ID = 25A 0 0 0.1 0 10 20 30 40 50 60 70 1 10 100 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQB25N33 Rev. A 3 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 1.1 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 * Notes : 1. VGS = 10 V 2. ID = 12.5 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 30 500 ID, Drain Current [A] 100 25 ID, DRAIN CURRENT (A) 100 µs 20 1ms 10 10ms DC 15 1 Operation in This Area is Limited by R DS(on) 10 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 5 0.1 1 10 100 1000 0 25 50 75 100 o 125 150 VDS, Drain-SourceVoltage[V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 2 (t), Thermal Response 1 D = 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 PDM t1 t2 M ax. (t) θJC Z 0 .0 1 s in g le p u ls e * N o te s : 1 . Z θJC (t) = 3. T JM 0 .5 = P 0 C /W *Z 0 2 . D u ty F a c to r , D = t1/t2 -T C DM θJC 1 E -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 1 t1, S q u a re W ave P u ls e D u r a t io n [s e c ] FQB25N33 Rev. A 4 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB25N33 Rev. A 5 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB25N33 Rev. A 6 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET FQB25N33 Rev. A 7 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production FQB25N33 Rev. A 8 www.fairchildsemi.com