FQD1N60C_09

FQD1N60C / FQU1N60C January 2009 QFET ® FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • • • • • • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 4.8nC) Low Crss ( typical 3.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability • RoHS Compliant D D ! ● ◀ ▲ ● ● G S D-PAK FQD Series I-PAK GDS FQU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD1N60C / FQU1N60C 600 1 0.6 4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 33 1 2.8 4.5 2.5 28 0.22 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Typ ---Max 4.53 50 110 Units °C/W °C/W °C/W Rev. A1, January 2009 * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation FQD1N60C / FQU1N60C Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = VDS = 40 V, ID = 0.5 A 0.5 A (Note 4) 2.0 --- -9.3 0.75 4.0 11.5 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---130 19 3.5 170 25 4.5 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 1.1 A, VGS = 10 V (Note 4, 5) VDD = 300 V, ID = 1.1 A, RG = 25 Ω (Note 4, 5) -------- 7 21 13 27 4.8 0.7 2.7 24 52 36 64 6.2 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 0.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 1.1 A, dIF / dt = 100 A/µs (Note 4) ------ ---190 0.53 1 4 1.4 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 59 mH, IAS = 1.1 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 1.1 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation Rev. A1. January 2009 FQD1N60C / FQU1N60C Typical Characteristics 10 0 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 0 150 C o -55 C 25 C o o 10 -1 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test 10 -2 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 RDS(ON) [Ω ], Drain-Source On-Resistance VGS = 10V 20 I DR , Reverse Drain Current [A] 25 10 0 15 10 VGS = 20V 150℃ 25℃ 10 -1 5 ※ Note : TJ = 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0 0.0 0.5 1.0 1.5 2.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 250 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 200 10 VDS = 120V VDS = 300V Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 150 VDS = 480V Coss 6 100 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 4 50 Crss 2 ※ Note : ID = 1A 0 -1 10 10 0 10 1 0 0 1 2 3 4 5 6 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2009 Fairchild Semiconductor Corporation Rev. A1, January 2009 FQD1N60C / FQU1N60C Typical Characteristics (Continued) 1.2 3.0 2.5 BV DSS , (Norm alized) Drain-Source Breakdown Voltage RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.5 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 1.2 Figure 8. On-Resistance Variation vs Temperature 10 1 Operation in This Area is Limited by R DS(on) 1.0 100 µs ID, Drain Current [A] 10 0 1 ms 10 ms 100 ms DC 10 -1 ※ Notes : 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 10 -2 10 0 10 1 10 2 10 3 ID, Drain Current [A] 0.8 0.6 0.4 0.2 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature ( t), T h e rm a l R e s p o n s e D = 0 .5 10 0 0 .2 0 .1 0 .0 5 0 .0 2 ※ N o te s : 1 . Z θ J C ( t) = 4 .5 3 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C ( t) PDM t1 t2 θ JC Z 10 -1 0 .0 1 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation Rev. A1, January 2009 FQD1N60C / FQU1N60C Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS 10V Qgs Qg VGS DUT 3mA Qgd Charge Resistive Switching Test Circuit & Waveforms VDS RG 10V VGS RL VDD VDS 90% DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms VDS ID RG 10V tp L BVDSS IAS VDD DUT VDD BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD ID (t) VDS (t) tp Time ©2009 Fairchild Semiconductor Corporation Rev. A1, January 2009 FQD1N60C / FQU1N60C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2009 Fairchild Semiconductor Corporation Rev. A1, January 2009 FQD1N60C / FQU1N60C Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 ©2009 Fairchild Semiconductor Corporation Rev. A1, January 2009 FQD1N60C / FQU1N60C Mechanical Dimensions I - PAK Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation Rev. A1, January 2009 FQD1N60C / FQU1N60C TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2009 Fairchild Semiconductor Corporation Rev. A1. January 2009