FQH8N100C

FQH8N100C 1000V N-Channel MOSFET March 2008 QFET FQH8N100C 1000V N-Channel MOSFET Features • • • • • • • 8A, 1000V, RDS(on) = 1.45Ω @VGS = 10 V Low gate charge (typical 53nC) Low Crss (typical 16pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G GD S TO-247 FQH Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter FQH8N100C 1000 8.0 5.0 32 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 850 8.0 22 4.0 225 1.79 -55 to +150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -- Max 0.56 -40 Units °C/W °C/W °C/W ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQH8N100C Rev. A FQH8N100C 1000V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQH8N100C Device FQH8N100C Package TO-247 TC = 25°C unless otherwise noted Reel Size -- Tape Width -- Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 1000 V, VGS = 0 V VDS = 800 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 4.0A VDS = 50 V, ID = 4.0 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 1000 -----3.0 ------ Typ -1.4 -----1.2 8.0 2475 195 16 Max Units --10 100 100 -100 5.0 1.45 -3220 255 21 V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 500 V, ID = 8.0A, RG = 25 Ω ---(Note 4, 5) 50 95 122 80 53 13 23 ---620 5.2 110 200 254 170 70 --- ---- VDS = 800 V, ID = 8.0A, VGS = 10 V (Note 4, 5) -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 8.0 A VGS = 0 V, IS = 8.0 A, dIF / dt = 100 A/µs (Note 4) ------ 8.0 32.0 1.4 --- A A V ns µC 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 25mH, IAS =8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 8.0A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQH8N100C Rev. A 2 www.fairchildsemi.com FQH8N100C 1000V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : Figure 2. Transfer Characteristics 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 150 C o 10 0 10 0 25 C -55 C ※ Notes : 1. VDS = 50V 2. 250µs Pulse Test o o 10 -1 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 3.0 RDS(ON) [Ω ], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 2.5 10 1 VGS = 10V 2.0 1.5 10 0 VGS = 20V 1.0 ※ Note : TJ = 25℃ 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 0.5 0 5 10 15 20 25 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 4000 3500 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VDS = 200V 10 Ciss VGS, Gate-Source Voltage [V] VDS = 500V VDS = 800V Capacitance [pF] 2500 2000 1500 1000 8 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 6 4 Crss 500 0 -1 10 2 ※ Note : ID = 8A 10 0 10 1 0 0 10 20 30 40 50 60 70 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQH8N100C Rev. A 3 www.fairchildsemi.com FQH8N100C 1000V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 2 Operation in This Area is Limited by R DS(on) 8 ID, Drain Current [A] ID, Drain Current [A] 10 1 10 µs 100 µs 1 ms 10 ms DC 6 10 0 4 10 -1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 2 10 -2 10 0 10 1 10 2 10 3 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 11. Transient Thermal Response Curve 10 0 Zθ JC(t), Thermal Response D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 10 -2 ※ N o te s : 1 . Z θ J C (t) = 0 .5 6 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) PDM t1 s in g le p u ls e t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQH8N100C Rev. A 4 www.fairchildsemi.com FQH8N100C 1000V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQH8N100C Rev. A 5 www.fairchildsemi.com FQH8N100C 1000V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQH8N100C Rev. A 6 www.fairchildsemi.com FQH8N100C 1000V N-Channel MOSFET www.fairchildsemi.com FQH8N100C Rev. A 7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Preliminary First Production No Identification Needed Obsolete Full Production Not In Production © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com