FQI47P06

FQB47P06/FQI47P06 60V P-Channel MOSFET November 2006 FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. D G QFET Features • • • • • • • -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating TM tm S G S D2-PAK FQB Series GDS I2-PAK FQI Series D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB47P06 / FQI47P06 -60 -47 -33.2 -188 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 820 -47 16 -7.0 3.75 160 1.06 -55 to +175 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 0.94 40 62.5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB47P06/FQI47P06 Rev. A2 www.fairchildsemi.com FQB47P06/FQI47P06 60V P-Channel MOSFET Elerical Characteristics T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS /∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -60 V, VGS = 0 V VDS = -48 V, TC = 150°C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V -60 -------0.06 -------1 -10 -100 100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -23.5 A VDS = -30 V, ID = -23.5 A (Note 4) -2.0 --- -0.021 21 -4.0 0.026 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---2800 1300 320 3600 1700 420 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -48 V, ID = -47 A, VGS = -10 V (Note 4, 5) VDD = -30 V, ID = -23.5 A, RG = 25 Ω (Note 4, 5) -------- 50 450 100 195 84 18 44 110 910 210 400 110 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -47 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -47 A, dIF / dt = 100 A/µs (Note 4) ------ ---130 0.55 -47 -188 -4.0 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.43mH, IAS = -47A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -47A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 5. Essentially independent of operating temperature FQB47P06/FQI47P06 Rev. A2 www.fairchildsemi.com FQB47P06/FQI47P06 60V P-Channel MOSFET Typical Characteristics VGS 10 2 Top : -ID , Drain Current [A] -ID, Drain Current [A] - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 10 2 10 1 175 C o 10 1 10 0 25 C -55 C * Notes : 1. VDS = -30V 2. 250µs Pulse Test o o 10 0 * Notes : 1. 250µs Pulse Test 2. TC = 25 C o 10 -1 10 0 10 1 10 -1 2 4 6 8 10 -VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.10 10 2 RDS(on) [Ω], Drain-Source On-Resistance 0.08 0.06 VGS = - 10V -IDR , Reverse Drain Current [A] 10 1 0.04 VGS = - 20V 10 0 0.02 * Note : TJ = 25 C o 175 C o 25 C o * Notes : 1. VGS = 0V 2. 250µs Pulse Test 0.00 0 100 200 300 400 10 -1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 8000 7000 6000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd -VGS, Gate-Source Voltage [V] 10 VDS = -30V 8 Capacitance [pF] Coss 5000 4000 3000 2000 1000 0 -1 10 Ciss VDS = -48V * Notes : 1. VGS = 0 V 2. f = 1 MHz 6 Crss 4 2 * Note : ID = -47 A 10 0 10 1 0 0 10 20 30 40 50 60 70 80 90 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics FQB47P06/FQI47P06 Rev. A2 www.fairchildsemi.com FQB47P06/FQI47P06 60V P-Channel MOSFET Typical Characteristics (Continued) 1.2 2.5 -BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.1 1.5 1.0 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = -250µA 0.5 * Notes : 1. VGS = -10 V 2. ID = -23.5 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 10 3 50 Operation in This Area is Limited by R DS(on) -ID, Drain Current [A] 1 ms 10 ms 10 1 -ID, Drain Current [A] 10 2 100 µs 40 30 DC 20 10 0 * Notes : o 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o 10 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 o 150 175 -VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 0 (t), Thermal Response D = 0 .5 * N o te s : 0 .2 10 -1 1 . Z θ J C ( t) = 0 .9 4 o C /W M a x . 2 . D u t y F a c to r , D = t 1 / t 2 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e 3 . T JM - T C = P D M * Z θJC ( t) PDM t1 t2 Z θJC 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve FQB47P06/FQI47P06 Rev. A2 www.fairchildsemi.com FQB47P06/FQI47P06 60V P-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB47P06/FQI47P06 Rev. A2 www.fairchildsemi.com FQB47P06/FQI47P06 60V P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + V DUT I DS _ SD L D r iv e r R G C o m p li m e n t o f D U T ( N - C h a n n e l) V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I SD (DUT ) B o d y D io d e R e v e r s e C u r r e n t IR M d i/ d t IF M , B o d y D io d e F o r w a r d C u r r e n t V DS (DUT ) V SD B o d y D io d e F o r w a r d V o lt a g e D r o p B o d y D io d e R e c o v e r y d v / d t V DD FQB47P06/FQI47P06 Rev. A2 www.fairchildsemi.com FQB47P06/FQI47P06 60V P-Channel MOSFET Package Dimensions D2PAK (0.40) 9.90 ±0.20 4.50 ±0.20 1.30 –0.05 +0.10 1.20 ±0.20 9.20 ±0.20 15.30 ±0.30 1.40 ±0.20 2.00 ±0.10 0.10 ±0.15 2.40 ±0.20 2.54 ±0.30 9.20 ±0.20 www.fairchildsemi.com 4.90 ±0.20 (0.75) 1.27 ±0.10 2.54 TYP 0.80 ±0.10 2.54 TYP 10.00 ±0.20 (8.00) (4.40) 0° ~3 ° +0.10 0.50 –0.05 10.00 ±0.20 15.30 ±0.30 (1.75) (2XR0.45) 0.80 ±0.10 FQB47P06/FQI47P06 Rev. A2 4.90 ±0.20 (7.20) FQB47P06/FQI47P06 60V P-Channel MOSFET Package Dimensions (Continued) I2PAK 9.90 ±0.20 (0.40) 4.50 ±0.20 1.30 –0.05 +0.10 1.20 ±0.20 9.20 ±0.20 MAX 3.00 (1.46) 13.08 ±0.20 (0.94) 1.27 ±0.10 1.47 ±0.10 0.80 ±0.10 10.08 ±0.20 MAX13.40 (4 5° ) 2.54 TYP 2.54 TYP 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 FQB47P06/FQI47P06 Rev. A2 www.fairchildsemi.com FQB47P06/FQI47P06 60V P-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21 Preliminary No Identification Needed Full Production Obsolete Not In Production FQB47P06/FQI47P06 Rev. A2 www.fairchildsemi.com