FQI6N40C

FQB6N40C/FQI6N40C QFET FQB6N40C/FQI6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. TM Features • • • • • • 6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK GDS FQI Series G! !" " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB6N40C/FQI6N40C 400 6 3.6 24 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 270 6 7.3 4.5 73 0.58 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.71 40 62.5 Units °C/W °C/W °C/W ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQB6N40C/FQI6N40C Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 400 ------0.54 ------1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3A VDS = 40 V, ID = 3A (Note 4) 2.0 --- -0.83 4.7 4.0 1 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---480 80 15 625 105 20 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 320 V, ID = 6A, VGS = 10 V (Note 4, 5) VDD = 200 V, ID = 6A, RG = 25 Ω (Note 4, 5) -------- 13 65 21 38 16 2.3 8.2 35 140 55 85 20 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 6 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 6 A, dIF / dt = 100 A/µs (Note 4) ------ ---230 1.7 6 24 1.4 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.7 mH, IAS = 6 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQB6N40C/FQI6N40C Typical Characteristics 10 1 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : 10 1 150 C 25 C 10 0 o 10 0 o -55 C o 10 -1 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test 10 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.5 10 1 3.0 RDS(ON) [Ω ], Drain-Source On-Resistance 2.5 VGS = 10V 2.0 IDR, Reverse Drain Current [A] 10 0 1.5 VGS = 20V 1.0 ※ Note : TJ = 25℃ 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0.5 0 5 10 15 20 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 1200 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 1000 VDS = 80V 10 VDS = 200V Capacitance [pF] 800 VGS, Gate-Source Voltage [V] Ciss 600 8 VDS = 320V Coss ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 6 400 4 Crss 200 2 ※ Note : ID = 6A 0 -1 10 10 0 10 1 0 0 5 10 15 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQB6N40C/FQI6N40C Typical Characteristics (Continued) 1.2 3.0 2.5 BV DSS , (Normalized) Drain-Source Breakdown Voltage RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 3 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 6 10 2 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 10 µs 100 µs 1 ms 10 ms 100 ms 5 10 1 ID, Drain Current [A] 10 0 DC 10 -1 ※ Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -2 10 0 10 1 10 2 10 3 ID, Drain Current [A] 4 3 2 1 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature (t), T h e rm a l R e s p o n s e 10 0 D = 0 .5 0 .2 0 .1 10 -1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e ※ N o te s : 1 . Z θ J C ( t) = 1 .7 1 ℃ / W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) θ JC PDM t1 t2 Z 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQB6N40C/FQI6N40C Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS VGS RG RL VDD VDS 90% 10V DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG DUT tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD tp ID (t) VDS (t) Time 10V ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQB6N40C/FQI6N40C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQB6N40C/FQI6N40C Package Dimensions D2PAK (0.40) 9.90 ±0.20 4.50 ±0.20 1.30 –0.05 +0.10 1.20 ±0.20 9.20 ±0.20 15.30 ±0.30 1.40 ±0.20 2.00 ±0.10 0.10 ±0.15 2.54 ±0.30 9.20 ±0.20 Rev. A, August 2003 2.40 ±0.20 4.90 ±0.20 (0.75) 1.27 ±0.10 2.54 TYP 0.80 ±0.10 2.54 TYP 10.00 ±0.20 (8.00) (4.40) 0° ~3 ° +0.10 0.50 –0.05 10.00 ±0.20 15.30 ±0.30 (1.75) (2XR0.45) 0.80 ±0.10 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation 4.90 ±0.20 (7.20) FQB6N40C/FQI6N40C Package Dimensions (Continued) I2PAK 9.90 ±0.20 (0.40) 4.50 ±0.20 +0.10 1.30 –0.05 1.20 ±0.20 9.20 ±0.20 MAX 3.00 (1.46) 13.08 ±0.20 (0.94) 1.27 ±0.10 1.47 ±0.10 0.80 ±0.10 10.08 ±0.20 MAX13.40 (4 ) 5° 2.54 TYP 2.54 TYP 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5