FQP10N60C

FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D G GDS TO-220 FQP Series GD S TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Parameter FQP10N60C 9.5 5.7 38 FQPF10N60C 600 9.5 * 5.7 * 38 * ± 30 Units V A A A V mJ A mJ V/ns Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds (Note 2) (Note 1) (Note 1) (Note 3) 700 9.5 15.6 4.5 156 1.25 -55 to +150 300 50 0.4 W W/°C °C °C * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP10N60C 0.8 0.5 62.5 FQPF10N60C 2.5 -62.5 Units °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP10N60C / FQPF10N60C Rev. C FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQP10N60C FQPF10N60C Device FQP10N60C FQPF10N60C Package TO-220 TO-220F Reel Size --- Tape Width --- Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------ -0.7 ----- --1 10 100 -100 V V/°C µA µA nA nA Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 4.75 A VDS = 40 V, ID = 4.75 A (Note 4) 2.0 --- -0.6 8.0 4.0 0.73 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1570 166 18 2040 215 24 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 9.5A, VGS = 10 V (Note 4, 5) (Note 4, 5) VDD = 300 V, ID = 9.5A, RG = 25 Ω -------- 23 69 144 77 44 6.7 18.5 55 150 300 165 57 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9.5 A VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/µs (Note 4) ------ ---420 4.2 9.5 38 1.4 --- A A V ns µC 2 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 150°C 25°C 10 0 -55°C 10 0 10 -1 * Notes : 1. 250µs Pulse Test 2. TC = 25°C * Notes : 1. VDS = 40V 10 -1 2. 250µs Pulse Test 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.0 RDS(ON) [Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 1.5 10 1 VGS = 10V 1.0 10 0 0.5 VGS = 20V 150°C 25°C 10 -1 * Notes : 1. VGS = 0V 2. 250µs Pulse Test * Note : TJ = 25°C 0.0 0 5 10 15 20 25 30 35 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Figure 6. Gate Charge Characteristics 12 2500 Crss = Cgd 10 VDS = 120V VDS = 300V Ciss VGS, Gate-Source Voltage [V] Capacitance [pF] 2000 8 VDS = 480V 1500 Coss 6 1000 * Notes ; 1. VGS = 0 V 4 Crss 500 2. f = 1 MHz 2 * Note : ID = 9.5A 0 -1 10 0 10 0 10 1 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.5 * Notes : 1. VGS = 10 V 2. ID = 4.75 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Figure 9-1. Maximum Safe Operating Area for FQP10N60C 10 2 Figure 9-2. Maximum Safe Operating Area for FQPF10N60C 2 Operation in This Area is Limited by R DS(on) 10 µs 100 µs 10 Operation in This Area is Limited by R DS(on) 10 µs ID, Drain Current [A] 100 µs ID, Drain Current [A] 10 1 1 ms 10 ms 100 ms DC 10 1 10 0 1 ms 10 ms 100 ms DC 10 0 * Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 10 -1 * Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 10 -1 10 0 10 1 10 2 10 3 10 -2 10 0 10 1 10 2 10 3 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 10 8 ID, Drain Current [A] 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [°C] 4 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP10N60C 0 10 D = 0 .5 (t), Thermal Response 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e * N o te s : 1 . Z θ JC ( t) = 0 .8 ° C /W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z θJC ( t) PDM t1 t2 Z θJC 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF10N60C 10 0 D = 0 .5 (t), Thermal Response 0 .2 0 .1 0 .0 5 10 -1 * N o te s : 1 . Z θJC ( t) = 2 .5 °C /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z θJC ( t) 0 .0 2 0 .0 1 s in g le p u ls e 10 -2 Z θJC PDM t1 t2 -3 10 -5 10 -4 10 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 5 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters 8 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters 9 FQP10N60C / FQPF10N60C Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I26 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com