FQP12N60C

FQP12N60C / FQPF12N60C 600V N-Channel MOSFET September 2007 QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features • • • • • • • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G GDS TO-220 FQP Series GD S TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FQP12N60C 12 7.4 48 FQPF12N60C 12* 7.4* 48* Unit V A A A V mJ A mJ V/ns 600 ± 30 870 12 22.5 4.5 225 1.78 -55 to +150 300 51 0.41 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP12N60C 0.56 0.5 62.5 FQPF12N60C 2.43 -62.5 Unit °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP12N60C / FQPF12N60C Rev. B1 FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQP12N60C FQPF12N60C Device FQP12N60C FQPF12N60C Package TO-220 TO-220F TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250µA, TJ = 25°C ID = 250µA, Referenced to 25°C VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 6A VDS = 40V, ID = 6A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 600 -----2.0 ------ Typ -0.5 -----0.53 13 1760 182 21 30 85 140 90 48 8.5 21 ---420 4.9 Max Units --1 10 100 -100 4.0 0.65 -2290 235 28 70 180 280 190 63 --12 48 1.4 --V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns µC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 300V, ID = 12A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 400V, ID = 12A VGS = 10V ------ Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 12A VGS = 0V, IS = 12A dIF/dt =100A/µs (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FQP12N60C / FQPF12N60C Rev. B1 2 www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : Figure 2. Transfer Characteristics 10 1 ID, Drain Current [A] 10 1 ID, Drain Current [A] 150 C -55 C o o 25 C 10 0 o 10 0 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue RDS(ON) [Ω ], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 1.5 10 1 VGS = 10V 1.0 10 0 150℃ 25℃ -1 0.5 VGS = 20V ※ Note : TJ = 25℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 0 5 10 15 20 25 30 35 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 3500 3000 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VDS = 120V 10 VGS, Gate-Source Voltage [V] VDS = 300V VDS = 480V Capacitance [pF] Ciss Coss 8 2000 1500 1000 500 0 -1 10 6 Crss ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 4 2 ※ Note : ID = 12A 0 10 0 10 1 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQP12N60C / FQPF12N60C Rev. B1 3 www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 6.0 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FQP12N60C Figure 9-2. Maximum Safe Operating Area for FQPF12N60C 10 2 Operation in This Area is Limited by R DS(on) 10 2 Operation in This Area is Limited by R DS(on) 10 µs 100 µs ID, Drain Current [A] 10 µs 100 µs ID, Drain Current [A] 10 1 1 ms 10 ms 100 ms DC 10 1 10 0 10 0 1 ms 10 ms 100 ms DC 10 -1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 10 -1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 10 -2 10 0 10 1 10 2 10 3 10 -2 VDS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 3 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 14 12 10 8 6 4 2 0 25 ID, Drain Current [A] 50 75 100 125 150 TC, Case Temperature [℃] FQP12N60C / FQPF12N60C Rev. B1 4 www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP12N60C 10 0 Zθ JC(t), Thermal Response D = 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e 10 -1 ※ N o te s : 1 . Z θ J C (t) = 0 .5 6 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF12N60C Zθ JC(t), Thermal Response 10 0 D = 0 .5 0 .2 0 .1 10 -1 0 .0 5 0 .0 2 0 .0 1 ※ N o te s : 1 . Z θ J C (t) = 2 .4 3 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) PDM t1 s in g le p u ls e t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQP12N60C / FQPF12N60C Rev. B1 5 www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQP12N60C / FQPF12N60C Rev. B1 6 www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQP12N60C / FQPF12N60C Rev. B1 7 www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FQP12N60C / FQPF12N60C Rev. B1 8 www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters FQP12N60C / FQPF12N60C Rev. B1 9 15.87 ±0.20 www.fairchildsemi.com FQP12N60C / FQPF12N60C 600V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 10 10 FQP12N60C / FQPF12N60C Rev. B1 www.fairchildsemi.com