FQP6N40CF_06

FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET February 2006 FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 70ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D G GDS TO-220 FQP Series GD S TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current Parameter Drain-Source Voltage - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQP6N40CF 6 3.6 24 FQPF6N40CF 400 6* 3.6* 24* ± 30 270 6 73 4.5 Units V A A A V mJ A mJ V/ns 73 0.58 -55 to +150 300 38 0.3 W W/°C °C °C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FQP6N40CF 1.71 0.5 62.5 FQPF6N40CF 3.31 -62.5 Units °C/W °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF Rev. B FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQP6N40CF FQPF6N40CF Device FQP6N40CF FQPF6N40CF Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆ TJ IDSS IGSSF IGSSR Parameter TC = 25°C unless otherwise noted Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V Min. 400 ------ Typ. -0.54 ----- Max. --1 10 100 -100 Units V V/°C µA µA nA nA Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3 A VDS = 40 V, ID = 3 A (Note 4) 2.0 --- -0.9 4.7 4.0 1.1 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---480 80 15 625 105 20 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 320 V, ID = 6 A, VGS = 10 V (Note 4, 5) (Note 4, 5) VDD = 200 V, ID = 6 A, R G = 25 Ω -------- 13 65 21 38 16 2.3 8.2 35 140 55 85 20 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.7mH, IAS = 6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 6 A VGS = 0 V, IS = 6 A, dIF / dt = 100 A/µs (Note 4) ------ ---70 0.12 6 24 1.4 --- A A V ns µC FQP6N40CF/FQPF6N40CF Rev. B 2 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 1 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : 10 1 150 C 25 C 10 0 o 10 0 o -55 C o 10 -1 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test 10 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 3.5 10 1 RDS(ON) [Ω ], Drain-Source On-Resistance 3.0 2.5 VGS = 10V 2.0 IDR, Reverse Drain Current [A] 10 0 1.5 VGS = 20V 1.0 ※ Note : TJ = 25℃ 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0.5 0 5 10 15 20 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 1200 Figure 6. Gate Charge Characteristics 12 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 80V 10 VGS, Gate-Source Voltage [V] VDS = 200V 8 Capacitances [pF] 800 Ciss 600 VDS = 320V Coss 6 400 Crss 200 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 4 2 ※ Note : ID = 6A 0 -1 10 10 0 10 1 0 0 5 10 15 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQP6N40CF/FQPF6N40CF Rev. B 3 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 3 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FQP6N40CF 2 Figure 9-2. Maximum Safe Operating Area for FQPF6N40CF 10 Operation in This Area is Limited by R DS(on) 1 10 2 10 µs 100 µs Operation in This Area is Limited by R DS(on) 10 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 100 ms 10 0 10 1 1 ms 10 ms 100 ms DC 100 µs DC 10 0 10 -1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 10 -1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 1 2 3 10 -2 10 0 10 1 10 2 10 3 10 -2 10 10 10 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 6 5 ID, Drain Current [A] 4 3 2 1 0 25 50 75 100 125 150 TC, Case Temperature [℃] FQP6N40CF/FQPF6N40CF Rev. B 4 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP6N40CF 10 0 D = 0 .5 0 .2 0 .1 ※ N o te s : 1 . Z θ J C (t) = 1 .7 1 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) Zθ JC(t), Thermal Response 10 -1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 0 1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF6N40CF D = 0 .5 Zθ JC(t), Thermal Response 10 0 0 .2 0 .1 0 .0 5 10 -1 ※ N o te s : 1 . Z θ J C (t) = 3 .3 1 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 0 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQP6N40CF/FQPF6N40CF Rev. B 5 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQP6N40CF/FQPF6N40CF Rev. B 6 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQP6N40CF/FQPF6N40CF Rev. B 7 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FQP6N40CF/FQPF6N40CF Rev. B 8 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters FQP6N40CF/FQPF6N40CF Rev. B 9 15.87 ±0.20 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 Preliminary No Identification Needed Full Production Obsolete Not In Production 10 FQP6N40CF/FQPF6N40CF Rev. B www.fairchildsemi.com