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FS6S0965RC-YDTU

FS6S0965RC-YDTU

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    FS6S0965RC-YDTU - Fairchild Power Switch(SPS) - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
FS6S0965RC-YDTU 数据手册
www.fairchildsemi.com FS6S0965RC Fairchild Power Switch(SPS) Features • • • • • • • • • • Wide operating frequency range up to 150Khz Internal Burst mode Controller for Stand-by mode Pulse by pulse over current limiting Over current protection(Latch mode) Over voltage protection (Auto restart mode) Over load protection(Auto restart mode) Internal thermal shutdown function(Latch mode) Under voltage lockout Internal high voltage sense FET Eternal sync terminal/Soft start Description The Fairchild Power Switch(SPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(SPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, optimized gate turn on/turn off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and controller or RCC switching converter solution, a SPS can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective monitor power supply. TO-220-5L 1 Internal Block Diagram 3 Vpp=5.8/7.2V OSC Internal Bias Vref Vfb Vth=1V Burst mode controller Vref UVLO Vref 1 5 S Q Ron Vcc Vth=11V/12V R Roff PWM 4 Ifb 2.5R R Vcc Vfb Offset Rsenese Vref Idelay OLP Vth=7.5V Vcc Vth=30V OVP OCL Filter (130nsec) TS D Vth=1V 2 S UVLO Reset (Vcc=9V) Q Q S R R Power-on (Tj=160 ℃) Reset (Vcc=6.5V) Rev.1.0.0 ©2001 Fairchild Semiconductor Corporation FS6S0965RC Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-source(GND) voltage Gate-source (GND) Voltage Drain current pulsed (2) Single pulsed avalanche energy (3) Single Pulsed Avalanche current (4) (1) Symbol VDSS VDGR VGS IDM EAS IAS ID ID VCC VFB VS_S PD(Watt H/S) Derating Tj TA TSTG Value 650 650 ±30 32.4 515 25 8.1 5.1 35 −0.3 to VCC −0.3 to 10 155 1.243 +160 −25 to +85 −55 to +150 Unit V V V ADC mJ A ADC ADC V V V W W/°C °C °C °C Drain-Gate Voltage (RGS=1MΩ) Continuous drain current (Tc = 25°C) Continuous drain current (TC=100°C) Supply voltage Input Voltage Range Total Power Dissipation Operating junction temperature Operating Ambient Temperature Storage Temperature range Notes: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=14.5mH, starting Tj=25°C 4. L=13uH, starting Tj=25°C 2 FS6S0965RC Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Parameter Drain-source breakdown voltage Zero gate voltage drain current Static drain-source on resistance (note) Forward transconductance (note) Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate-source charge Gate-drain (Miller) charge Note: Pulse test : Pulse width ≤ 300µS, duty 2% 1 S = --R Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Condition VGS=0V, ID=250µA VDS=650V, VGS=0V VDS=520V VGS=0V, TC=125°C VGS=10V, ID=1.8A VDS=50V, ID=1.8A VGS=0V, VDS=25V, f = 1MHz VDD=325V, ID=6.5A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=6.5A, VDS=520V (MOSFET Switching time are Essentially independent of Operating temperature) Min. 650 - Typ. 1.0 1300 135 25 25 75 130 70 45 8 21 Max. 200 300 1.2 60 - Unit V µA µA Ω S pF nS nC 3 FS6S0965RC Electrical Characteristics (Ta=25°C unless otherwise specified) Parameter UVLO SECTION Start threshold voltage Stop threshold voltage SENSEFET SECTION Drain to PKG Breakdown voltage Drain to Source Breakdown voltage Drain to Source Leakage current OSCILLATOR SECTION Initial Frequency Voltage Stability Temperature Stability (note4) Maximum duty cycle Minimum Duty Cycle FEEDBACK SECTION Feedback source current Shutdown Feedback voltage Shutdown delay current PROTECTION SECTION Over Voltage Protection Over Current Latch Voltage (Note2) Thermal Shutdown Temp.(Note4) VOVP VOCL TSD Vsync ≥ 11V 27 0.9 140 30 1.0 160 33 1.1 V V °C IFB VSD Idelay VFB=GND Vfb ≥ 6.9V VFB=5V 0.7 6.9 1.6 0.9 7.5 2.0 1.1 8.1 2.4 mA V µA FOSC ∆FOSC DMAX DMIN -25°C ≤ Ta ≤ 85°C 22 0 0 92 25 1 ±5 95 28 3 ±10 98 0 kHz % % % % FSTABLE 12V ≤ Vcc ≤ 23V BVpkg BVdss Idss 60HZ AC, Ta=25°C Vdrain = 650V, Ta=25°C Vdrain = 650V, Ta=25°C 3500 650 300 V V uA VSTART VSTOP VFB=GND VFB=GND 14 8 15 9 16 10 V V Symbol Condition Min. Typ. Max. Unit 4 FS6S0965RC Electrical Characteristics (Continued) (Ta=25°C unless otherwise specified) Parameter Sync & SOFTSTART SECTION Softstart Vortage Softstart Current Sync High Threshold Voltage Sync Low Threshold Voltage BURST MODE SECTION Burst mode Low Threshold Voltage Burst mode High Threshold Voltage Burst mode Enable Feedback Voltage(Note4) Burst mode Peak Current Limit(Note3) Burst mode Frequency CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit(Note3) TOTAL DEVICE SECTION Start Up current Operating supply current (Note1) ISTART IOP IOP(MIN) IOP(MAX) Vfb=GND, VCC=14V Vfb=GND, VCC=16V Vfb=GND, VCC=10V Vfb=GND, VCC=28V 10 15 mA 0.1 0.17 mA IOVER 5.28 6.0 6.72 A VBURL VBURH VBEN IBU_PK FBUR Vfb=0V Vfb=0V Vcc=10.5V Vcc=10.5V Vcc=10.5V, Vfb=0V 10.4 11.4 0.7 0.6 40 11.0 12.0 1.0 0.85 50 11.6 12.6 1.3 1.1 60 V V V V KHz VSS ISS VSYNCH VSYNCL Vfb=2 Vss=V Vcc=16V,Vfb=5V Vcc=16V,Vfb=5V 4.7 0.8 5.0 1.0 7.2 5.8 5.3 1.2 V mA V V Symbol Condition Min. Typ. Max. Unit Note: (1) These parameters is the current flowing in the Control IC. (2) These parameters, although guaranteed, are tested in EDS(wafer test) process. (3) These parameters indicate Inductor Current. (4) These parameters, although guranteed at the design, are not tested in massing production. 5 FS6S0965RC Typical Performance Characteristics [mA] Istart [mA] Iop 0.15 0.12 0.09 10.2 10.0 9.8 9.6 0.06 9.4 0.03 0.00 -25 0 25 50 Temp 75 100 125 150 9.2 9.0 -25 0 25 50 Temp 75 100 125 150 Figure 1. Start Up Current vs. Temp. [V] Vstart Figure 2. Operating Supply Current vs. Temp. [V] Vstop 16.0 15.6 15.2 9.10 9.06 9.02 14.8 8.98 14.4 14.0 13.6 -25 0 25 50 Temp 75 100 125 150 8.94 8.90 -25 0 25 50 Temp 75 100 125 150 Figure 3. Start Threshold Voltage vs. Temp. [kHz] Fosc Figure 4. Stop Threshold Voltage vs. Temp. [%] Dmax 26.0 25.2 24.4 23.6 22.8 22.0 -25 96.0 95.6 95.2 94.8 94.4 94.0 0 25 50 Temp 75 100 125 150 -25 0 25 50 Temp 75 100 125 150 Figure 5. Initial Frequency vs. Temp. Figure 6. Maximum Duty vs. Temp. 6 FS6S0965RC Typical Performance Characteristics (Continued) [V] 0.50 Voff 1.05 1.00 0.95 0.90 0.30 0.85 0.20 0.80 0.75 -25 0 25 50 Temp 75 100 125 150 -25 0 25 50 Temp 75 100 125 150 [mA] Ifb 0.40 0.10 Figure 7. Feedback Offset Voltage vs. Temp. [uA] Idelay Figure 8. Feedback Source Current vs. Temp. [V] Vsd 2.10 7.60 2.02 7.56 1.94 1.86 7.52 7.48 1.78 7.44 1.70 -25 0 25 50 Temp 75 100 125 150 7.40 -25 0 25 50 Temp 75 100 125 150 Figure 9. Shutdown Delay Current vs. Temp. [V] Vss Figure 10. Shutdown Feedback Voltage vs. Temp. [V] Vovp 5.10 31.0 30.6 30.2 5.06 5.02 4.98 29.8 29.4 29.0 -25 0 25 50 Temp 75 100 125 150 -25 0 25 50 Temp 75 100 125 150 4.94 4.90 Figure 11. Softstart Voltage vs. Temp. Figure 12. Over Voltage Protection vs. Temp. 7 FS6S0965RC Typical Performance Characteristics (Continued) [V] Vburl [V] Vburh 11.2 12.3 12.2 11.1 12.1 11.0 12.0 11.9 10.9 11.8 10.8 -25 0 25 50 Temp 75 100 125 150 11.7 -25 0 25 50 Temp 75 100 125 150 Figure 13. Burst Mode Low Voltage vs. Temp. [kHz] Fbur Figure 14. Burst Mode High Voltage vs. Temp. [V] Vben 53.0 1.60 51.0 1.20 49.0 0.80 47.0 0.40 45.0 0.00 -25 0 25 50 Temp 75 100 125 150 -25 0 25 50 Temp 75 100 125 150 43.0 Figure 15. Burst Mode Frequency vs. Temp. [A] Ibur_pk Figure 16. Burst Mode Enable Voltage vs. Temp. [A] Iover 0.98 6.20 0.95 6.10 0.92 6.00 0.89 5.90 0.86 5.80 0.83 -25 0 25 50 Temp 75 100 125 150 5.70 -25 0 25 50 Temp 75 100 125 150 Figure 17. Burst Mode Peak Current vs. Temp. Figure 18. Peak Current Limit vs. Temp. 8 FS6S0965RC Package Dimensions TO-220-5L ø3.60 ±0.10 1.30 ±0.10 2.80 ±0.10 9.88 ±0.20 (8.70) (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 (3.70) 9.20 ±0.20 (0.93) 13.08 ±0.20 1.10 TYP 2-1.30MAX (#1,#5) 0° ) (4 0.80 TYP 3-1.00MAX (#2,#3,#4) 5-0.60 ±0.10 #1 #2 #3 #4 #5 (0.35) (3.00) 15.90 ±0.20 18.70 ±0.20 (4.60) 2.54TYP [2.54 ±0.20] 3-1.50TYP [3-1.50 ±0.20] 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 9 FS6S0965RC Package Dimensions (Continued) TO-220-5L(Forming) 10 FS6S0965RC Ordering Information Product Number FS6S0965RC-TU FS6S0965RC-YDTU TU : Non Forming Type YDTU : Forming Type Package TO-220-5L TO-220-5L(Forming) Marking Code 6S0965RC BVdss 650V Rds(on) 1.0 11 FS6S0965RC DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 6/8/01 0.0m 001 Stock#DSxxxxxxxx  2001 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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