FS6S1265REYDTU

www.fairchildsemi.com FS6S1265RE Fairchild Power Switch(FPS) Features • • • • • • • • • • • • • • • Wide Operating Frequency Range Up to 150kHz Lowest Cost SMPS Solution Lowest External Components Low Start up Current (Max:170uA) Low Operating Current (Max:15mA) Internal High Voltage SenseFET Built-in Auto Restart Circuit Over Voltage Protection (Auto Restart Mode) Over Load Protection (Auto Restart Mode) Over Current Protection (Auto Restart Mode) Internal Thermal Protection (Auto Restart Mode) Pulse By Pulse Over Current Limiting Internal Burst Mode Controller for Stand-by Mode Under Voltage Lockout With Hysteresis External Sync. Terminal Description The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, optimized gate turn on/turn off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective monitor power supply. TO-3P-5L 1 1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync. Internal Block Diagram Vcc Vref Drain 3 Vpp=5.8/7.2V OSC Internal Bias Vref Vfb Vth=1V Burst mode controller Vref 1 SoftStart & Sync 5 UVLO S Q Ron Vcc Vth=11V/12V R Roff PWM Feedback 4 Ifb 2.5R R Vcc Vfb Offset Rsenese Vref Idelay OLP Vth=7.5V Vcc Vth=30V OVP OCL Filter (130nsec) TS D Vth=1V 2 GND S UVLO Reset (Vcc=9V) Q (Tj=160℃) R Rev.1.0.1 ©2003 Fairchild Semiconductor Corporation FS6S1265RE Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed (1) Symbol VDGR VGS IDM ID ID IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Darting TJ TA TSTG Value 650 ±30 48 12 8.4 30(950) 35 -0.3 to VCC -0.3 to 10 240 1.92 +150 -25 to +85 -55 to +150 Unit V V ADC ADC ADC A(mJ) V V V W W/°C °C °C °C Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanche Current(3) (Energy (2)) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. Note: 1. Repetitive rating: pulse width limited by maximum junction temperature 2. L = 10mH, starting Tj = 25°C 3. L = 13uH, starting Tj = 25°C 2 FS6S1265RE Electrical Characteristics (SFET Part) (Ta = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (1) Forward Transconductance(2) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge Note: 1. Pulse test: pulse width ≤ 300us, duty 2% 1 2. S = --R Symbol BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Conditions VGS = 0V, ID = 50µA VDS=Max, Rating, VGS = 0V VDS= 0.8Max, Rating, VGS = 0V, TC = 125°C VGS = 10V, ID = 4.5A VDS = 50V, ID = 4.5A VGS = 0V, VDS = 25V, f = 1MHz VDD = 0.5BVDSS, ID = 12.0A (MOSFET switching time are essentially independent of operating temperature) VGS = 10V, ID = 12.0A, VDS = 0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) Min. 650 - Typ. 0.7 1820 185 32 38 120 200 100 60 10 30 Max. 200 300 0.9 - Unit V µA µA Ω S pF nS nC 3 FS6S1265RE Electrical Characteristics (Control Part) (Continued) (VCC=16V, Tamb = 25°C unless otherwise specified) Parameter UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Frequency Voltage Stability Temperature Stability (Note2) Maximum Duty Cycle Minimum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current SYNC. & SOFTSTART SECTION Softstart Voltage Softstart Current Sync High Threshold Voltage(Note3) Sync Low Threshold Voltage(Note3) BURST MODE SECTION Burst Mode Low Threshold Voltage Burst Mode High Threshold Voltage Burst Mode Enable Feedback Voltage Burst Mode Peak Current Limit(Note4) Burst Mode Freqency Peak Current Limit (Note4) PROTECTION SECTION Over Voltage Protection Over Current Latch voltage(Note3) Thermal Shutdown Tempature(Note2) TOTAL DEVICE SECTION Start-Up Current Operating Supply Current(Note1) ISTART IOP IOP(MIN) VFB = GND, VCC = 14V VFB = GND, VCC = 16V VFB = GND, VCC = 12V 10 15 mA 0.1 0.17 mA VOVP VOCL TSD VCC ≥ 27V 27 0.9 140 30 1.0 160 33 1.1 V V °C VBURL VBURH VBEN IBURPK FBUR IOVER VFB=0V VFB=0V VCC=10.5V VCC=10.5V , VFB=0V 10.4 11.4 0.7 0.45 40 7.04 11.0 12.0 1.0 0.6 50 8.0 11.6 12.6 1.3 0.75 60 8.96 V V V A kHz A VSS ISS VSYNCH VSYNCL VFB=2V VSS=0V VCC=16V , VFB=5V VCC=16V , VFB=5V 4.7 0.8 5.0 1.0 7.2 5.8 5.3 1.2 V mA V V IFB VSD IDELAY VFB=GND VFB ≥ 6.9V VFB=5V 0.7 6.9 1.6 0.9 7.5 2.0 1.1 8.1 2.4 mA V FOSC FSTABLE ∆FOSC DMAX DMIN 12V ≤ VCC ≤ 23V -25°C ≤ Τa ≤ 85°C 22 0 0 92 25 1 ±5 95 28 3 ±10 98 0 kHz % % % % VSTART VSTOP VFB=GND VFB=GND 14 8 15 9 16 10 V V Symbol Conditions Min. Typ. Max. Unit µA CURRENT LIMIT(SELF-PROTECTION)SECTION IOP(MAX) VFB = GND, VCC = 30V Notes: 1. These parameters are the Current Flowing in the Control IC. 2. These parameters, although guaranteed, are not 100% tested in production 3. These parameters, although guaranteed, are tested in EDS(wafer test) process 4. These parameters are indicated Inductor Current. 4 FS6S1265RE Typical Performance Characteristics 0.150 [mA] Start Up Current vs. Temp 11.0 [mA] Operating Current vs. Temp 0.125 10.5 0.100 10.0 0.075 9.5 0.050 -25 0 25 50 75 100 125 150 Figure 1. Start Up Current vs. Temp. 9.0 -25 0 25 50 75 100 125 150 Figure 2. Operating Current vs. Temp. 16.0 [V] Start Threshold Voltage vs. Temp 10.0 [V] Stop Threshold Voltage vs. Temp 15.5 9.5 15.0 9.0 14.5 8.5 14.0 -25 0 25 50 75 100 125 150 8.0 -25 0 25 50 75 100 125 150 Figure 3. Start Threshold Voltage vs. Temp. [KHz] 28 27 Figure 4. Stop Threshold Voltage vs. Temp. Initial Freqency vs. Temp 96.0 [%] Maximum Duty vs. Temp 95.5 26 25 24 94.5 23 22 -25 0 25 50 75 100 125 150 94.0 -25 0 25 50 75 100 125 150 95.0 Figure 5. Initial Frequency vs. Temp. Figure 6. Maximum Duty vs. Temp. 5 FS6S1265RE Typical Performance Characteristics (Continued) [V] Feedback Offset Voltage vs. Temp 1.1 0.45 0.40 0.35 [mA] Feedback Source Current vs. Temp 1.0 0.9 0.30 0.25 0.20 -25 0.8 0 25 50 75 100 125 150 0.7 -25 0 25 50 75 100 125 150 Figure 7. Feedback Offset Voltage vs. Temp. Figure 8. Feedback Source Current vs. Temp. [V] ShutDown Feedback Voltage vs. Temp 7.60 2.4 [uA] ShutDown Delay Current vs. Temp 2.2 7.55 2.0 7.50 1.8 7.45 1.6 -25 0 25 50 75 100 125 150 7.40 -25 0 25 50 75 100 125 150 Figure 9. Shutdown Delay Current vs. Temp. Figure 10. Shutdown Feedback Voltage vs. Temp. 5.02 [V] Softstart Voltage vs. Temp 31.0 [V] OverVoltage Protection vs. Temp 5.01 30.5 5.00 30.0 4.99 29.5 4.98 -25 0 25 50 75 100 125 150 29.0 -25 0 25 50 75 100 125 150 Figure 11. Softstart Voltage vs. Temp. Figure 12. Over Voltage Protection vs. Temp. 6 FS6S1265RE Typical Performance Characteristics (Continued) [V] 11.2 Burst Mode Low Voltage vs. Temp 12.2 [V] Burst Mode High Voltage vs. Temp 11.1 12.1 11.0 12.0 10.9 11.9 10.8 -25 0 25 50 75 100 125 150 11.8 -25 0 25 50 75 100 125 150 Figure 13. Burst Mode Low Voltage vs. Temp. Figure 14. Burst Mode High Voltage vs. Temp. [V] Burst ModeEnable Voltage vs. Temp [KHz] 54 Burst Mode Freqency vs. Temp 1.3 1.2 52 1.1 50 1.0 0.9 48 0.8 46 -25 0 25 50 75 100 125 150 0.7 -25 0 25 50 75 100 125 150 Figure 15. Burst Mode Frequency vs. Temp. [A] T Figure 16. Burst Mode Enable Voltage vs. Temp. 0.75 0.70 Burst Mode Peak Current vs.Temp 8.2 [A] Over Current Limit vs. Temp 8.1 0.65 0.60 0.55 7.9 8.0 0.50 0.45 -25 0 25 50 75 100 125 150 7.8 -25 0 25 50 75 100 125 150 Figure 17. Burst ModeT Peak Current vs. Temp. Figure 18. Peak Current Limit vs. Temp. 7 FS6S1265RE Package Dimensions TO-3P-5L 8 FS6S1265RE Package Dimensions (Continued) TO-3P-5L (Forming) 9 FS6S1265RE Ordering Information Product Number Package Marking Code BVdss Rds(on) FS6S1265RETU FS6S1265REYDTU TU : Non Forming Type YDTU : Forming Type TO-3P-5L TO-3P-5L(Forming) 6S1265R E 650V 0.7Ω DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 8/25/03 0.0m 001 Stock#DSxxxxxxxx  2003 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.