FSB560A

FSB560/FSB560A FSB560 / FSB560A C E B SuperSOT -3 (SOT-23) TM NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FSB560/FSB560A 60 80 5 2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic FSB560/FSB560A PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient 500 250 mW °C/W Units © 2001 Fairchild Semiconductor Corporation FSB560/FSB560A, Rev B1 FSB560/FSB560A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 µA IE = 100 µA VCB = 30 V VCB = 30 V, TA=100°C IEBO Emitter Cutoff Current VEB = 4V 60 80 5 100 10 100 V V V nA uA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 100 mA, VCE = 2 V IC=500mA, VCE =2V FSB560 FSB560A IC = 1 A, VCE = 2 V IC = 2 A, VCE = 2 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 100 mA IC = 2 A, IB=200 mA FSB560 FSB560A VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 1 A, IB = 100 mA IC = 1 A, VCE = 2 V 70 100 250 80 40 300 350 300 1.25 1 V V mV 300 550 - SMALL SIGNAL CHARACTERISTICS Cobo fT Output Capacitance Transition Frequency VCB = 10 V, IE = 0, f = 1MHz IC = 100 mA,VCE = 5 V, f=100MHz 75 30 pF - *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% © 1998 Fairchild Semiconductor Corporation FSB560/FSB560A, Rev B1 Typical Characteristics VBESAT-BASE-EMITTER SATURATION VOLTAGE(V) 1.4 1.2 1 VBEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current β = 10 Base-Emitter On Voltage vs. Collector Current 1.4 Vce = 2.0V 1.2 1 - 40 ° C - 40 ° C 0.8 0.6 0.4 0.2 0.001 25 ° C 0.8 0.6 0.4 0.2 0.0001 25 ° C 125 ° C 125 ° C 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Collector-Emitter Saturation Voltage vs Collector Current 0.8 β = 10 Input/Output Capacitance vs. Reverse Bias Voltage 450 400 CAPACITANCE (pf) 350 300 250 200 150 100 50 C obo C ibo f = 1.0 MHz 0.6 1 25° C 25° C 0.4 - 40° C 0.2 0 0.001 0.01 0.1 1 I C- COLLECTOR CURRENT (A) 10 0 0.1 0.2 0.5 1 2 5 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 Current Gain vs. Collector Current 700 600 H FE - CURRENT GAIN 1 25°C Vce = 2.0V 500 400 25°C 300 - 40°C 200 100 0 0 0.5 1 1.5 2 2.5 I C - COLLECTOR CURRENT (A) 3 3.5 FSB560/FSB560A, Rev B1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET  VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3