FSQ510_08

FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter September 2008 FSQ510, FSQ510H, and FSQ510M Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter – Low EMI and High Efficiency Features Uses an LDMOS Integrated Power Switch Optimized for Valley Switching Converter (VSC) Low EMI through Variable Frequency Control and Inherent Frequency Modulation High Efficiency through Minimum Drain Voltage Switching Extended Valley Switching for Wide Load Ranges Small Frequency Variation for Wide Load Ranges Advanced Burst-Mode Operation for Low Standby Power Consumption Pulse-by-Pulse Current Limit Protection Functions: Overload Protection (OLP), Internal Thermal Shutdown (TSD) with Hysteresis Under-Voltage Lockout (UVLO) with Hysteresis Internal Startup Circuit Internal High-Voltage SenseFET: 700V Built-in Soft-Start: 5ms Description A Valley Switching Converter (VSC) generally shows lower EMI and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. The FSQ510 (H or M) is an integrated valley switching pulse width modulation (VSPWM) controller and SenseFET specifically designed for offline switch-mode power supplies (SMPS) for valley switching with minimal external components. The VS-PWM controller includes an integrated oscillator, under-voltage lockout (UVLO), leading-edge blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated precise current sources for loop compensation, and self-protection circuitry. Compared with discrete MOSFET and PWM controller solutions, the FSQ510 (H or M) can reduce total cost, component count, size and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a platform for cost-effective designs of a valley switching flyback converters. Applications Auxiliary Power Supplies for LCD TV, LCD Monitor, Personal Computer, and White Goods Ordering Information Output Power Table Operating Current RDS(ON) 230VAC ± 15%(2) Replaces Part 85-265VAC Junction Package Eco Limit (MAX) Devices Number Open Open (3) (3) Status Temperature Adapter (4) Adapter (4) Frame Frame FSQ510 7-DIP FSD210B FSQ510H FSQ510M 8-DIP 7-MLSOP (1) RoHS -40 to +130°C 320mA 32Ω 5.5W 9W 4W 6W FSD210DH FSD210BM For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Notes: 1. The junction temperature can limit the maximum output power. 2. 230VAC or 100/115VAC with voltage doubler. 3. Typical continuous power with a Fairchild charger evaluation board described in this datasheet in a nonventilated, enclosed adapter housing, measured at 50°C ambient temperature. 4. Maximum practical continuous power for auxiliary power supplies in an open-frame design at 50°C ambient temperature. © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Application Circuit Vo AC IN Vstr D Sync VS -PWM Vfb GND Vcc Figure 1. Typical Application Circuit Internal Block Diagram Sync 4 (3) 200 ns delay VCC 5 (7) Vstr 8 (1) D 7 (8) VREF VREF IFB 0.7V / 0.1V OSC S R UVLO 8.7V / 6.7V VREF Idelay Vfb 3 (2) 6R R Q 360ns LEB Rsense 0.85V / 0.75V S/S 5ms TSD A/R S Q R (0.4V) OLP 4.7V n(m):n stands for the pin number of 7-DIP and 7-MLSOP m stands for the pin number of 8-DIP 1,2 (4,5,6) GND Figure 2. Internal Block Diagram © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 2 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Pin Assignments Vstr Vfb D Vcc FSQ510H Sync GND GND GND Figure 3. Package Diagrams for FSQ510(M) and FSQ510H Pin Definitions 7-Pin 1, 2 8-Pin 4, 5, 6 Name GND Description This pin is the control ground and the SenseFET source. This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. If the voltage of this pin reaches 4.7V, the overload protection triggers, which shuts down the FPS. This pin is internally connected to the sync-detect comparator for valley switching. In normal valley-switching operation, the threshold of the sync comparator is 0.7V/0.1V. This pin is the positive supply input. This pin provides internal operating current for both startup and steady-state operation. High-voltage power SenseFET drain connection. This pin is connected directly, or through a resistor, to the highvoltage DC link. At startup, the internal high-voltage current source supplies internal bias and charges the external capacitor connected to the VCC pin. Once VCC reaches 8.7V, the internal current source is disabled. 3 2 Vfb 4 5 7 3 7 8 Sync VCC D 8 1 Vstr © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 3 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol VSTR VDS VCC VFB VSync PD Vstr Pin Voltage Drain Pin Voltage Supply Voltage Parameter Min. Max. 500 700 20 Unit V V V V V W Feedback Voltage Range Sync Pin Voltage 7-DIP Total Power Dissipation 7-MLSOP 8-DIP Maximum Junction Temperature -0.3 -0.3 6.5 6.5 1.38 1.47 +150 TJ TSTG Recommended Operating Junction (5) Temperature Storage Temperature -40 -55 +140 +150 °C °C Notes: 5. The maximum value of the recommended operating junction temperature is limited by thermal shutdown. Thermal Impedance TA=25°C unless otherwise specified. Items are tested with the standards JESD 51-2 and 51-10 (DIP). Symbol 7-DIP, 7-MLSOP θJA θJC 8-DIP θJA θJC Parameter Junction-to-Ambient Thermal Impedance Junction-to-Case Thermal Impedance (7) (6) Value 90 13 (6) Unit °C/W °C/W °C/W °C/W Junction-to-Ambient Thermal Impedance Junction-to-Case Thermal Impedance (7) 85 13 Notes: 6. Free-standing with no heatsink; without copper clad; measurement condition - just before junction temperature TJ enters into TSD. 7. Measured on the DRAIN pin close to plastic interface. © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 4 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Electrical Characteristics T T J=25°C unless otherwise specified. Symbol BVDSS IDSS RDS(ON) CISS COSS tr tf fS ΔfS IFB t BB tBW DMAX DMIN VSTART VSTOP Parameter Drain-Source Breakdown Voltage Zero-Gate-Voltage Drain Current Drain-Source On-State Resistance Input Capacitance Rise Time(8) Fall Time (8) (8) Conditions VCC=0V, ID=100μA VDS=700V TJ=25°C, ID=180mA TJ=100°C, ID=180mA VGS=11V VDS=40V VDS=350V, ID=25mA VDS=350V, lD=25mA VCC=11V, VFB=0.5V, Vsync=0V -25°C < TJ < 125°C VCC=11V, VFB=0V VCC=11V, VFB=1V, Vsync Frequency Sweep VCC=11V, VFB=3V VCC=11V, VFB=0V VFB=0V, VCC Sweep After Turn-on, VFB=0V VSTR=40V, VCC Sweep Min. 700 Typ. Max. Unit V SenseFET Section 150 28 42 96 28 100 50 87.7 200 7.2 94.3 ±5 225 7.6 3.0 54 8.0 6.0 3 0.75 VCC=11V, VFB Sweep μA 32 48 pF pF ns ns 100.0 ±8 250 8.2 kHz % μA μs μs 66 0 9.4 7.4 7 0.95 0.85 % % V V ms V V mV 360 5.2 6 5.5 150 mA V μA ns °C °C 0.85 0.15 220 V V ns Output Capacitance(8) Control Section Initial Switching Frequency Switching Frequency Variation(8) Feedback Source Current Switching Blanking Time Valley Detection Window Time(8) Maximum Duty Ratio Minimum Duty Ratio UVLO Threshold Voltage 60 8.7 6.7 5 0.85 0.75 100 Internal Soft-Start Time tS/S Burst-Mode Section VBURH VBURL HYS Burst-Mode Voltage 0.65 Protection Section ILIM VSD IDELAY tLEB TSD HYS VSH VSL tSync Peak Current Limit Shutdown Feedback Voltage Shutdown Delay Current FSQ510H FSQ510(M) di/dt=90mA/µs VDS=40V, VCC=11V, VFB Sweep VCC=11V, VFB=5V 280 4.2 4 3.5 130 320 4.7 5 4.5 360 140 60 Leading-Edge Blanking Time(8) Thermal Shutdown Temperature(8) Synchronous Section Synchronous Threshold Voltage Synchronous Delay Time Operating Supply Current (Control Part Only) Startup Charging Current VCC=11V, VFB=1V VCC=11V, VFB=1V 0.55 0.05 180 0.70 0.10 200 Total Device Section IOP ICH VCC=11V, VFB=5.5V VCC=VFB=0V,VSTR=40V 0.8 1.0 27 1.0 1.2 mA mA V Supply Voltage VCC=VFB=0V, VSTR Sweep VSTR Note: 8. These parameters, although guaranteed, are not 100% tested in production. © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 5 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Comparison between FSD210B and FSQ510 Function Control Mode Operation Method EMI Reduction Method Soft-Start Protection Power Balance FSD210B Voltage Mode Constant Frequency PWM Frequency Modulation 3ms (Built-in) TSD Long TCLD Less than 5W Under Open-Frame Condition at the Universal Line Input FSQ510 Current Mode Valley Switching Operation Valley Switching 5ms (Built-in) Advantages of FSQ510 Fast Response Easy-to-Design Control Loop Turn-on at Minimum Drain Voltage High Efficiency and Low EMI Frequency Variation Depending on the Ripple of DC Link Voltage High Efficiency and Low EMI Longer Soft-Start Time Small Difference of Input Power between the Low and High Input Voltage Cases More Output Power Rating Available due to the Valley Switching TSD with Hysteresis Enhanced Thermal Shutdown Protection Short TCLD More than 6W Under Open-Frame Condition at the Universal Line Input Power Ratings © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 6 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Typical Performance Characteristics Characteristic graphs are normalized at TA=25°C. 1.20 1.15 1.10 1.20 1.15 1.10 Normalized 1.05 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 Normalized 1.05 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 Temperature [ ℃] Temperature [ ℃] Figure 4. Operating Frequency (fOSC) vs. TA Figure 5. Peak Current Limit (ILIM) vs. TA 1.20 1.15 1.10 1.20 1.15 1.10 Normalized 1.05 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 Normalized 1.05 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 Temperature [ ℃] Temperature [ ℃] Figure 6. Start Threshold Voltage (VSTART) vs. TA Figure 7. Stop Threshold Voltage (VSTOP) vs. TA 1.20 1.15 1.10 1.20 1.15 1.10 Normalized 1.05 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 Normalized 1.05 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 Temperature [ ℃] Temperature [ ℃] Figure 8. Shutdown Feedback Voltage (VSD) vs. TA Figure 9. Maximum Duty Cycle (DMAX) vs. TA © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 7 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Typical Performance Characteristics (Continued) 1.20 1.15 1.10 1.20 1.15 1.10 Normalized 1.05 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 Normalized 1.05 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 Temperature [ ℃] Temperature [ ℃] Figure 10. Feedback Source Current (IFB) vs. TA Figure 11. Shutdown Delay Current (IDELAY) vs. TA 1.20 1.15 1.10 Normalized 1.05 1.00 0.95 0.90 0.85 0.80 -40 -25 0 25 50 75 100 125 Temperature [ ℃] Figure 12. Operating Supply Current (IOP) vs. TA © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 8 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Functional Description 1. Startup: At startup, an internal high-voltage current source supplies the internal bias and charges the external capacitor (Ca) connected to the VCC pin, as illustrated in Figure 13. When VCC reaches 8.7V, the FPS begins switching and the internal high-voltage current source is disabled. The FPS continues normal switching operation and the power is supplied from the auxiliary transformer winding unless VCC goes below the stop voltage of 6.7V. VDC Ca VO FOD817 V fb OB Vref Idelay 3 Vref I FB D1 D2 + Vfb * KA431 VS signal OSC 6R R Gate driver SenseFET 2.2 Leading-Edge Blanking (LEB): At the instant the internal SenseFET is turned on, a high-current spike usually occurs through the SenseFET, caused by primary-side capacitance and secondary-side rectifier reverse recovery. Excessive voltage across the Rsense resistor would lead to incorrect feedback operation in the current mode VS-PWM control. To counter this effect, the FPS employs a leading-edge blanking (LEB) circuit to inhibit the VS-PWM comparator for a short time (tLEB) after the SenseFET is turned on. VCC 5 ICH 8 Vstr VSD OLP R sense 6.7V/ 8.7V Vref VCC good Internal Bias Figure 14. Valley Switching Pulse-Width Modulation (VS-PWM) Circuit 3. Synchronization: The FSQ510 (H or M) employs a valley-switching technique to minimize the switching noise and loss. The basic waveforms of the valley switching converter are shown in Figure 15. To minimize the MOSFET switching loss, the MOSFET should be turned on when the drain voltage reaches its minimum value, as shown in Figure 15. The minimum drain voltage is indirectly detected by monitoring the VCC winding voltage, as shown in Figure 15. B B Figure 13. Startup Block 2. Feedback Control: This device employs currentmode control, as shown in Figure 14. An opto-coupler (such as the FOD817) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the Rsense resistor makes it possible to control the switching duty cycle. When the reference pin voltage of the shunt regulator exceeds the internal reference voltage of 2.5V, the opto-coupler LED current increases, pulling down the feedback voltage and reducing the drain current. This typically occurs when the input voltage is increased or the output load is decreased. 2.1 Pulse-by-Pulse Current Limit: Because currentmode control is employed, the peak current through the SenseFET is limited by the inverting input of PWM comparator (VFB*), as shown in Figure 14. Assuming that the 225µA current source flows only through the internal resistor (6R + R=12.6kΩ), the cathode voltage of diode D2 is about 2.8V. Since D1 is blocked when the feedback voltage (VFB) exceeds 2.8V, the maximum voltage of the cathode of D2 is clamped at this voltage, clamping VFB*. Therefore, the peak value of the current through the SenseFET is limited. V DS V RO V RO V DC V Sync tF 0.7V 0.1V 200ns Delay MOSFET Gate ON ON Figure 15. Valley Switching Waveforms © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 9 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter 4. Protection Circuits: The FSQ510 (H or M) has two self-protective functions, overload protection (OLP) and thermal shutdown (TSD). The protections are implemented as auto-restart mode. Once the fault condition is detected, switching is terminated and the SenseFET remains off. This causes VCC to fall. When VCC falls down to the under-voltage lockout (UVLO) stop voltage of 6.7V, the protection is reset and the startup circuit charges the VCC capacitor. When VCC reaches the start voltage of 8.7V, the FSQ510 (H or M) resumes normal operation. If the fault condition is not removed, the SenseFET remains off and VCC drops to stop voltage again. In this manner, the auto-restart can alternately enable and disable the switching of the power SenseFET until the fault condition is eliminated. Because these protection circuits are fully integrated into the IC without external components, reliability is improved without increasing cost. B B most applications. This protection is implemented in auto-restart mode. VFB 4.7V Overload Protection 2.8V t12= CB•(4.7-2.8)/Idelay t1 t2 t Vds Power on Fault occurs Fault removed Figure 17. Overload Protection 4.2 Thermal Shutdown (TSD): The SenseFET and the control IC on a die in one package make it easy for the control IC to detect the abnormal over temperature of the SenseFET. If the temperature exceeds approximately 140°C, the thermal shutdown triggers and the FPS stops operation. The FPS operates in auto-restart mode until the temperature decreases to around 80°C, when normal operation resumes. 5. Soft-Start: The FPS has an internal soft-start circuit that increases the VS-PWM comparator inverting input voltage, together with the SenseFET current, slowly after it starts up. The typical soft-start time is 5ms. The pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors. The voltage on the output capacitors is progressively increased with the intention of smoothly establishing the required output voltage. This helps prevent transformer saturation and reduces stress on the secondary diode during startup. 6. Burst-Mode Operation: To minimize power dissipation in standby mode, the FPS enters burstmode operation. As the load decreases, the feedback voltage decreases. As shown in Figure 18, the device automatically enters burst mode when the feedback voltage drops below VBURL (750mV). At this point, switching stops and the output voltages start to drop at a rate dependent on standby current load. This causes the feedback voltage to rise. Once it passes VBURH (850mV), switching resumes. The feedback voltage then falls and the process repeats. Burst mode alternately enables and disables switching of the SenseFET, reducing switching loss in standby mode. VCC 8.7V 6.7V Normal operation Fault situation Normal operation t Figure 16. Auto Restart Protection Waveforms 4.1 Overload Protection (OLP): Overload is defined as the load current exceeding its normal level due to an unexpected event. In this situation, the protection circuit should trigger to protect the SMPS. However, even when the SMPS is in the normal operation, the overload protection circuit can be triggered during the load transition. To avoid this undesired operation, the overload protection circuit is designed to trigger only after a specified time to determine whether it is a transient situation or a true overload situation. Because of the pulse-by-pulse current limit capability, the maximum peak current through the SenseFET is limited and, therefore, the maximum input power is restricted with a given input voltage. If the output consumes more than this maximum power, the output voltage (Vo) decreases below the set voltage. This reduces the current through the opto-coupler LED, which also reduces the opto-coupler transistor current, increasing the feedback voltage (VFB). If VFB exceeds 2.8V, D1 is blocked and the 5µA current source starts to charge CB slowly up. In this condition, VFB continues increasing until it reaches 4.7V, when the switching operation is terminated, as shown in Figure 17. The delay time for shutdown is the time required to charge CB from 2.8V to 4.7V with 5µA. A 20 ~ 50ms delay time is typical for © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 10 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Vo Voset VFB 0.85V 0.75V Once the SenseFET is enabled, the next start is prohibited during the blanking time (tB). After the blanking time, the controller finds the first valley within the duration of the valley detection window time (tW ) (case A, B, and C). If no valley is found in tW , the internal SenseFET is forced to turn on at the end of tW (case D). Therefore, FSQ510, FSQ510H, and FSQ510M have minimum switching frequency of 94.3kHz and maximum switching frequency of 132kHz, typically, as shown in Figure 20. B Ids T smax=10.6 µs Ids IDS A tB=7.6µs T s_A Vds IDS IDS B time Switching disabled tB=7.6µs T s_B t1 t2 t3 Switching disabled t4 Figure 18. Burst-Mode Operation 7. Advanced Valley Switching Operation: To minimize switching loss and Electromagnetic Interference (EMI), the MOSFET turns on when the drain voltage reaches its minimum value in VS converters. Due to the Discontinuous Conduction Mode (DCM) operation, the feedback voltage is not changed, despite the DC link voltage ripples, if the load condition is not changed. Since the slope of the drain current is changed depending on the DC link voltage, the turn-on duration of MOSFET is variable with the DC link voltage ripples. The switching period is changed continuously with the DC link voltage ripples. Not only the switching at the instant of the minimum drain voltage, but also the continuous change of the switching period, reduces EMI. VS converters inherently scatter the EMI spectrum. Typical products for VSC turn the MOSFET on when the first valley is detected. In this case, the range of the switching frequency is very wide as a result of the load variations. At a very light-load, for example, the switching frequency can be as high as several hundred kHz. Some products for VSC, such as Fairchild’s FSCQ-series, define the turn-on instant of SenseFET change at the first valley into at the second valley, when the load condition decreases under its predetermined level. The range of switching frequency narrows somewhat. For details, consult an FSCQ-series datasheet, such as: http://www.fairchildsemi.com/pf/FS/FSCQ1265RT.html The range of the switching frequency can be limited tightly in FSQ-series. Because a kind of blanking time (tB) is adopted, as shown in Figure 19, the switching frequency has minimum and maximum values. IDS IDS C tB=7.6µ s T s_C IDS IDS tB=7.6µ s tW=3µs D T smax=10.6 µs Figure 19. Advanced VS Operation When the resonant period is 2µs 132 kHz A 104 kHz 94.3kHz B C Con stant frequency D Bur st mode Po Figure 20. Switching Frequency Range of the Advanced Valley Switching www.fairchildsemi.com 11 © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Package Dimensions Figure 21. 7-Lead, Dual In-line Package (DIP) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 12 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Package Dimensions (Continued) 9.83 9.00 6.67 6.096 8.255 7.61 5.08 MAX 3.683 3.20 7.62 0.33 MIN (0.56) 2.54 3.60 3.00 0.56 0.355 1.65 1.27 7.62 0.356 0.20 9.957 7.87 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO JEDEC MS-001 VARIATION BA B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. D) DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994 E) DRAWING FILENAME AND REVSION: MKT-N08FREV2. Figure 22. 8-Lead, Dual In-line Package (DIP) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 13 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter Package Dimensions (Continued) MKT-MLSOP07ArevA Figure 23. 7-Lead, MLSOP Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 14 FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter © 2008 Fairchild Semiconductor Corporation FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0 www.fairchildsemi.com 15