FYP2045DN

FYP2045DN FYP2045DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1 23 TO-220 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 45 45 20 150 -65 to +150 Units V V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 2.2 Units °C/W Electrical Characteristics (per diode) Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.55 0.49 0.70 0.65 mA 1 80 Units V IRM * * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 FYP2045DN Typical Characteristics 100 100 TJ=150 C o Reverse Current, I R[mA] Forward Current, I F[A] 10 10 TJ=125 C o 1 1 TJ=75 C 0.1 o TJ=125 C 0.1 o TJ=75 C TJ=25 C o o 0.01 TJ=25 C o 0.01 0.0 1E-3 0.5 1.0 1.5 0 10 20 30 40 Forward Voltage Drop, VF[V] Reverse Voltage, VR[V] Figure 1. Typical Forward Voltage Characteristics (per diode) Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode) 10 o Juntion Capacitance, C J[pF] TJ=25 C 700 600 500 400 300 Transient Thermal Impedance [ C/W] o 1000 900 800 1 200 0 10 20 30 40 100µ 1m 10m 100m 1 10 Reverse Voltage, VR[V] Pulse Duration [s] Figure 3. Typical Junction Capacitance (per diode) Figure 4. Thermal Impedance Characteristics (per diode) 25 180 A verage Forward Current, IF(AV)[A] Max. Forward Surge Current, I FSM[A] 80 100 o DC 20 160 140 120 100 80 60 40 20 0 1 10 100 15 10 5 0 0 20 40 60 120 140 160 Case Temperature, T C [ C] Number of Cycles @ 60Hz Figure 5. Forward Current Derating Curve Figure 6. Non-Repetitive Surge Current (per diode) ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 FYP2045DN Package Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1